Patents by Inventor Chun-Ching Hsiao

Chun-Ching Hsiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8609460
    Abstract: A semiconductor structure and a fabricating method thereof are provided. The fabricating method includes forming a gate, a source, and a drain on a substrate and forming an oxide semiconductor material between the gate and the source and drain. The oxide semiconductor material is formed by performing a deposition process, and nitrogen gas is introduced before the deposition process is completely performed, so as to form oxide semiconductor nitride on the oxide semiconductor material.
    Type: Grant
    Filed: April 18, 2011
    Date of Patent: December 17, 2013
    Assignee: Au Optronics Corporation
    Inventors: Po-Tsun Liu, Yi-Teh Chou, Li-Feng Teng, Fu-Hai Li, Han-Ping D. Shieh, Wei-Ting Lin, Ming-Chin Hung, Chun-Ching Hsiao, Jiun-Jye Chang, Po-Lun Chen
  • Publication number: 20130280519
    Abstract: The present invention relates to a flexible ceramic substrate, which is a flexible substrate made of ceramic powder compound. The substrate includes a copper foil substrate having a thickness within a given range to form circuit board wiring through etching. The metal substrate has a surface on which a ceramic compound layer that is formed of a ceramic powder and a gum-like material of a predetermined weight ratio. The gum-like material fills in and wraps crystal gaps of the ceramic powder compound to bond the ceramic powder together to form a flexible ceramic compound layer of a predetermined thickness. The ceramic powder is bonded to the metal substrate to support heat-generating components and conduct and dissipate heat emitting from the heat-generating components.
    Type: Application
    Filed: January 2, 2013
    Publication date: October 24, 2013
    Applicant: SHAMROCK OPTRONICS CO., LTD.
    Inventors: CHUN-CHING HSIAO, CHIANG-CHUNG CHANG
  • Publication number: 20120061661
    Abstract: A semiconductor structure and a fabricating method thereof are provided. The fabricating method includes forming a gate, a source, and a drain on a substrate and forming an oxide semiconductor material between the gate and the source and drain. The oxide semiconductor material is formed by performing a deposition process, and nitrogen gas is introduced before the deposition process is completely performed, so as to form oxide semiconductor nitride on the oxide semiconductor material.
    Type: Application
    Filed: April 18, 2011
    Publication date: March 15, 2012
    Applicant: AU OPTRONICS CORPORATION
    Inventors: Po-Tsun Liu, Yi-Teh Chou, Li-Feng Teng, Fu-Hai Li, Han-Ping D. Shieh, Wei-Ting Lin, Ming-Chin Hung, Chun-Ching Hsiao, Jiun-Jye Chang, Po-Lun Chen
  • Publication number: 20120049105
    Abstract: A composition with heat dissipation performance of ceramics includes ceramic particles that take a weight percentage of substantially 25%-90% of the composition, have a particle size substantially between 10-50 ?m, and thermal conductivity ??25 W/m·K, the ceramic particles being subjected to surface activation treatment; and metal particles that take a weight percentage of substantially 75%-10% of the composition and have thermal conductivity ??50 W/m·K. The ceramic particles and the metal particles are subjected to heating under a non-oxidizing environment to a temperature greater than the melting point of the metal but below the melting point of the ceramic particles, so that the metal is molten to form a metal melt that surrounds and bonds the ceramic particles, and then pouring and casting are performed in a non-oxidizing environment. As such, the metal that possesses excellent thermal conduction capability is also imposed with excellent thermal radiation capability of the ceramics.
    Type: Application
    Filed: August 22, 2011
    Publication date: March 1, 2012
    Inventors: CHUN-CHING HSIAO, Chiang-Chung Chang
  • Publication number: 20110140034
    Abstract: A composite for coating and sputtering a heat-dissipating film, wherein composite contains silicon carbide, resin, and dilute solvent which are mixed and blended to be capable of being coated, sputtered, and cured into a heat-dissipating film of a specific thickness. As such, the heat-dissipating performance could be conveniently enhanced. here is no need to rely on heat-sinking fins of large surface area. The production cost is reduced, recycling is easier, and the highly contaminating anodizing treatment could be avoided, while the robustness against erosion and harsh weather is still maintained.
    Type: Application
    Filed: February 23, 2011
    Publication date: June 16, 2011
    Inventors: Chiang-Chung CHANG, Chun-Ching HSIAO
  • Publication number: 20110054104
    Abstract: The invention provides a composite for coating and sputtering a heat-dissipating film. The composite contains silicon carbide of 25˜30 wt. % (weight percentage), teflon-based resin of 9-11 wt. %, and diluted ketones/alcohols-group material of 60˜65 wt. %. These components are mixed and blended to be capable of being coated, sputtered, and cured into a heat-dissipating film of a specific thickness. As such, the heat-dissipating performance could be conveniently enhanced. There is no need to rely on heat-sinking fins of large surface area. The production cost is reduced, recycling is easier, and the highly contaminating anodizing treatment could be avoided, while the robustness against erosion and harsh weather is still maintained.
    Type: Application
    Filed: August 26, 2009
    Publication date: March 3, 2011
    Inventors: CHIANG-CHUNG CHANG, Chun-Ching Hsiao