Abstract: A MOS transistor includes a substrate, a first region, a second region, a source region, a drain region, an active gate stack, and a dummy gate stack. The substrate has a first conductivity. The first region having the first conductivity is formed in the substrate. The second region having a second conductivity is formed in the substrate and is adjacent to the first region. The source region with the second conductivity is formed in the first region. The drain region with the second conductivity is formed in the second region. The active gate stack is disposed on the first region. The dummy gate stack is disposed on the second region, and the dummy gate stack is electrically coupled to a variable voltage.

Abstract: A MOS transistor includes a substrate, a first region, a second region, a source region, a drain region, an active gate stack, and a dummy gate stack. The substrate has a first conductivity. The first region having the first conductivity is formed in the substrate. The second region having a second conductivity is formed in the substrate and is adjacent to the first region. The source region with the second conductivity is formed in the first region. The drain region with the second conductivity is formed in the second region. The active gate stack is disposed on the first region. The dummy gate stack is disposed on the second region, and the dummy gate stack is electrically coupled to a variable voltage.

Abstract: A MOS transistor includes a substrate, a first region, a second region, a source region, a drain region, an active gate stack, and a dummy gate stack. The substrate has a first conductivity. The first region having the first conductivity is formed in the substrate. The second region having a second conductivity is formed in the substrate and is adjacent to the first region. The source region with the second conductivity is formed in the first region. The drain region with the second conductivity is formed in the second region. The active gate stack is disposed on the first region. The dummy gate stack is disposed on the second region, and the dummy gate stack is electrically coupled to a variable voltage.

Abstract: A MOS transistor includes a substrate, a first region, a second region, a source region, a drain region, an active gate stack, and a dummy gate stack. The substrate has a first conductivity. The first region having the first conductivity is formed in the substrate. The second region having a second conductivity is formed in the substrate and is adjacent to the first region. The source region with the second conductivity is formed in the first region. The drain region with the second conductivity is formed in the second region. The active gate stack is disposed on the first region. The dummy gate stack is disposed on the second region, and the dummy gate stack is electrically coupled to a variable voltage.

Abstract: A MOS transistor includes a substrate, a first region, a second region, a source region, a drain region, an active gate stack, and a dummy gate stack. The substrate has a first conductivity. The first region having the first conductivity is formed in the substrate. The second region having a second conductivity is formed in the substrate and is adjacent to the first region. The source region with the second conductivity is formed in the first region. The drain region with the second conductivity is formed in the second region. The active gate stack is disposed on the first region. The dummy gate stack is disposed on the second region, and the dummy gate stack is electrically coupled to a variable voltage.

Abstract: A novel semiconductor device structure includes a first-conductivity-type semiconductor substrate, an isolated region, a first-conductivity-type MOS region, and a second-conductivity-type MOS region. A first-conductivity-type MOS transistor locates in the first-conductivity-type MOS region with a second-conductivity-type well surrounding, and a first-conductivity-type deep well surrounding the second-conductivity-type well with a second-conductivity-type deep well surrounding. In the second-conductivity-type MOS region, a second-conductivity-type MOS transistor is formed with a first-conductivity-type well surrounding. The first-conductivity-type deep well and the second-conductivity-type deep well are sufficiently reducing the noise and current leakage from other devices or from the semiconductor substrate.

Abstract: A flexible pivotal device for a mannequin joint is arranged in a lower limb of a mannequin and comprises a female connection member and a male connection member. The female connection member includes a first fixing plate, a first fixing disc and a first engagement member. The first fixing plate has two installation holes. The male connection member is coupled to the female connection member and includes a second fixing disc; a connection element having two sleeves respectively inserted through two installation holes and moveable thereinside, and a second engagement member engaged with the first engagement member; and a second fixing plate arranged between the second fixing disc and the connection element, locked to the second fixing disc, and having two hooks respectively coupled to two elastic elements arranged inside the sleeves. The sleeves can be pulled away from the second fixing plate to a certain degree.

Abstract: A novel semiconductor device structure includes a first-conductivity-type semiconductor substrate, an isolated region, a first-conductivity-type MOS region, and a second-conductivity-type MOS region. A first-conductivity-type MOS transistor locates in the first-conductivity-type MOS region with a second-conductivity-type well surrounding, and a first-conductivity-type deep well surrounding the second-conductivity-type well with a second-conductivity-type deep well surrounding. In the second-conductivity-type MOS region, a second-conductivity-type MOS transistor is formed with a first-conductivity-type well surrounding. The first-conductivity-type deep well and the second-conductivity-type deep well are sufficiently reducing the noise and current leakage from other devices or from the semiconductor substrate.

Abstract: A method for diagnosis of diseases adopted on an electronic stethoscope which includes at least two sound receiving portions, a noise control portion, a processing portion, a data portion and an output portion. The method includes: first, the sound receiving portions receive sound signals issued from a patient's lungs included external noises; next, the sound signals are sent to the noise control portion which eliminates the external noise, and the processing portion to be overlapped and intensified; then characteristic values are retrieved from the sound signals to be compared with disease sound signal data in the data portion; finally the output portion outputs a diseases judgment result. Thus the electronic stethoscope can perform automatic interpretation of diseases to reduce human erroneous diagnostic judgment. Users also can get preliminary understanding of their body conditions when doctors are absent.

Abstract: A water gate opened and closed by oil pressure includes a gate frame having a vertical guide rail on top for an elevating rod to slide up and down. The elevating rod has its lower end connected to the top of a gate body and its upper end inserted in the guide rail and pivotally connected with a swing lever, having rollers provided on a roller shaft for the elevating rod to slide smoothly in the guide rail. The gate body has pulleys provided on two opposite sides to engage the rails of the gate frame, permitting the gate body to smoothly slide up and down along the rails. Then, an oil pressure system controls the piston rod of an oil pressure cylinder to drive the swing lever and the elevating rod to move up and down, synchronously forcing the gate body open and close.

Abstract: A manual light water gate includes a water gate and an opening and closing device as main components combined together. A transmitting rod having its lower end connected to the water gate and its upper portion inserted in the opening and closing device is controlled by stop members of the opening and closing device so as to move the water gate to open and close. Such a design is easy in handling and capable to be provided across a ditch, an irrigation canal, etc. available for adjusting its water level.

Abstract: An automatically opened and closed water gate includes a water gate and an opening and closing mechanism combined together. The opening and losing mechanism consists of an oil pressure cylinder with a movable piston rod for driving movable pulleys for pulling or releasing wire ropes extending around a plurality of stationary pulleys and fixed with the water gate. Then the water gate is pulled up and down by means of the wire ropes operated by the opening and closing mechanism to pull up or lowering down the water gate automatically, for adjusting water level of a canal, a watercourse, an irrigation channel, etc.

Abstract: A wire-jointing assembly is provided for a joint box of the type including a casing securely attached to a support rod of a ceiling fan, the joint box further comprising a switch seat and electric control devices mounted in the casing. The wire-jointing assembly includes a first wire-jointing seat and a second wire-jointing seat. The first wire-jointing seat is attached to the support rod of the ceiling fan and includes first side slots that are communicated with outside, each first side slot receiving a first wire that provides connection with the switch seat and the electric control devices. The second wire-jointing seat is secured to the switch seat and includes second side slots that are communicated with outside, each second side slot receiving a second wire that provides connection with the switch seat and the electric control devices. The first wire includes a first contact, and the second wire includes a second contact in electrical contact with the first contact of the first wire.