Patents by Inventor CHUN-CHONG FU

CHUN-CHONG FU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080057640
    Abstract: A method for fabricating a first electrode of a capacitor is described. A substrate comprising an insulating layer formed thereon is provided. The insulating layer has an opening. A silicon layer is formed on the insulating layer. The silicon layer is transformed to a hemispherical grain layer. An etching process is performed to remove a portion of the hemispherical grain layer outside the opening.
    Type: Application
    Filed: November 13, 2006
    Publication date: March 6, 2008
    Applicant: PROMOS TECHNOLOGIES INC.
    Inventors: LI-CHENG TENG, CHUN-WEI YU, CHUN-CHONG FU, YUAN-MING CHANG