Patents by Inventor Chun-Chou Chang

Chun-Chou Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11942543
    Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.
    Type: Grant
    Filed: June 29, 2022
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Chou Lin, Yi-Cheng Chiu, Karthick Murukesan, Yi-Min Chen, Shiuan-Jeng Lin, Wen-Chih Chiang, Chen-Chien Chang, Chih-Yuan Chan, Kuo-Ming Wu, Chun-Lin Tsai
  • Patent number: 11935894
    Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.
    Type: Grant
    Filed: November 4, 2022
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Fong-yuan Chang, Chun-Chen Chen, Po-Hsiang Huang, Lee-Chung Lu, Chung-Te Lin, Jerry Chang Jui Kao, Sheng-Hsiung Chen, Chin-Chou Liu
  • Patent number: 7342137
    Abstract: The present invention relates to a novel compound and its uses, which is an extract isolated and purified from Antrodia camphorate, in particular to 4-hydroxy-2,3 -dimethoxy-6-methyl-5(3,7,11-trimethyl-dodeca-2,6,10-trienyl)-cyclohex-2-enone, and its use in tumor growth inhibition. The compound of the invention, which has never been discovered in Antrodia camphorate, can be applied in inhibiting the growth of cancer cells, such as breast cancer, hepatic cancer and prostate cancer; and be used as a pharmaceutical composition to inhibit the tumor growth; or further be applied in prevention of heart and blood vessel disease or dietary supplements for health needs through its antioxidant activity.
    Type: Grant
    Filed: May 11, 2007
    Date of Patent: March 11, 2008
    Assignee: Golden Biotechnology Corporation
    Inventors: Sheng-Yun Liu, Wu-Che Wen, Wan-Ling Tsou, Mao-Tien Kuo, Chun-Hung Huang, Ka-Hang Fok, Ya-Ying Li, Chun-Chou Chang