Abstract: A vibration assistant polishing module which comprises a polishing disk, a workpiece carrier tray, a linear guide way mechanism, a linkage, a motor and an adjustable eccentricity mechanism. The linear guide way mechanism includes a slide, a guide seat and a guide rod. The slide is pivot jointed with workpiece carrier tray and engaged in guide seat. The adjustable eccentricity mechanism comprises a base which is connected with a power shaft of the motor, and a pivot shaft of base and linkage is eccentric to the power shaft. The power shaft drives the base rotating and the linkage swinging eccentrically, and the slide moves linearly according to the limitation from guide seat, and a horizontal radial vibration and low frequency vibration is generated on the workpiece carrier tray, so the low frequency vibration is generated on the surface of the workpiece which is touched with the polishing disk.

Abstract: A vibration assistant polishing module which comprises a polishing disk, a workpiece carrier tray, a linear guide way mechanism, a linkage, a motor and an adjustable eccentricity mechanism. The linear guide way mechanism includes a slide, a guide seat and a guide rod. The slide is pivot jointed with workpiece carrier tray and engaged in guide seat. The adjustable eccentricity mechanism comprises a base which is connected with a power shaft of the motor, and a pivot shaft of base and linkage is eccentric to the power shaft. The power shaft drives the base rotating and the linkage swinging eccentrically, and the slide moves linearly according to the limitation from guide seat, and a horizontal radial vibration and low frequency vibration is generated on the workpiece carrier tray, so the low frequency vibration is generated on the surface of the workpiece which is touched with the polishing disk.

Abstract: A method for manufacturing a bonded wafer with ultra-thin single crystal ferroelectric film is provided, comprising the following steps: providing a single crystal ferroelectric wafer and a carrier wafer while activating the surfaces of the single crystal ferroelectric wafer and the carrier wafer; bonding the activated surface of the single crystal ferroelectric wafer to the activated surface of the carrier wafer; and thinning the single crystal ferroelectric wafer for forming an ultra-thin single crystal ferroelectric film. Wherein, the thinning process in the aforesaid preferred embodiment is the method of polishing, grinding, chemical mechanical polishing, or etching. And the bonding force generated in the bonding process is strong enough to resist the shearing force.

Abstract: A method for manufacturing a bonded wafer with ultra-thin single crystal ferroelectric film is provided, comprising the following steps: providing a single crystal ferroelectric wafer and a carrier wafer while activating the surfaces of the single crystal ferroelectric wafer and the carrier wafer; bonding the activated surface of the single crystal ferroelectric wafer to the activated surface of the carrier wafer; and thinning the single crystal ferroelectric wafer for forming an ultra-thin single crystal ferroelectric film. Wherein, the thinning process in the aforesaid preferred embodiment is the method of polishing, grinding, chemical mechanical polishing, or etching. And the bonding force generated in the bonding process is strong enough to resist the shearing force.