Patents by Inventor Chun-Fan Dai

Chun-Fan Dai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9726713
    Abstract: A testing method and testing system for a semiconductor element are provided. The method includes following steps. A level of a testing electrostatic discharge (ESD) voltage is determined. A plurality of sample components is provided. The testing ESD voltage is imposed on the sample components for testing ESD decay rates of the sample components. ESD withstand voltages of the sample components are detected. The relation between the ESD withstand voltages and the electrostatic discharge rates are recorded to a database. The testing ESD voltage is imposed on the semiconductor element for testing an ESD decay rate of the semiconductor element. The database is looked up according to the ESD decay rate of the semiconductor element to determine an ESD withstand voltage of the semiconductor element.
    Type: Grant
    Filed: April 16, 2013
    Date of Patent: August 8, 2017
    Assignee: Industrial Technology Research Institute
    Inventors: Tzung-Te Chen, Chun-Fan Dai, Han-Kuei Fu, Chien-Ping Wang, Pei-Ting Chou
  • Patent number: 9341669
    Abstract: The disclosure discloses a light emitting diode testing apparatus, which includes a power supply module, a probe, a control unit and a data acquisition unit. The power supply module provides a first current or a second current to a testing item. The probe measures characteristics of the testing item. The control unit controls the power supply module to provide the first current or the second current. The data acquisition unit acquires the characteristics of the testing item from the probe. The power supply module includes a first current source, at least one second current source and at least one protector. The first current source provides the first current to the testing item. The at least one second current source provides at least one additional current. The at least one protector prevents the first current from feeding back to the at least one second current source.
    Type: Grant
    Filed: September 18, 2013
    Date of Patent: May 17, 2016
    Assignee: Industrial Technology Research Institute
    Inventors: Chien-Ping Wang, Tzung-Te Chen, Yen-Liang Liu, Chun-Fan Dai, Han-Kuei Fu, Pei-Ting Chou
  • Patent number: 9110125
    Abstract: A method for detecting a semiconductor device property is provided. First, a semiconductor device is provided. Thereafter, a detecting current is applied and the semiconductor device is heated, and temperatures and voltages of the semiconductor device are measured, so as to establish a relationship between the temperatures and the voltages of the semiconductor device. Accordingly, a temperature sensitive parameter (TSP) is calculated. An apparatus for detecting a semiconductor device property is also provided.
    Type: Grant
    Filed: September 27, 2012
    Date of Patent: August 18, 2015
    Assignee: Industrial Technology Research Institute
    Inventors: Chien-Ping Wang, Tzung-Te Chen, Pei-Ting Chou, Chun-Fan Dai, Yi-Ping Peng
  • Publication number: 20140107961
    Abstract: A testing method and testing system for a semiconductor element are provided. The method includes following steps. A level of a testing electrostatic discharge (ESD) voltage is determined. A plurality of sample components is provided. The testing ESD voltage is imposed on the sample components for testing ESD decay rates of the sample components. ESD withstand voltages of the sample components are detected. The relation between the ESD withstand voltages and the electrostatic discharge rates are recorded to a database. The testing ESD voltage is imposed on the semiconductor element for testing an ESD decay rate of the semiconductor element. The database is looked up according to the ESD decay rate of the semiconductor element to determine an ESD withstand voltage of the semiconductor element.
    Type: Application
    Filed: April 16, 2013
    Publication date: April 17, 2014
    Applicant: Industrial Technology Research Institute
    Inventors: Tzung-Te Chen, Chun-Fan Dai, Han-Kuei Fu, Chien-Ping Wang, Pei-Ting Chou
  • Publication number: 20140049283
    Abstract: A method for detecting a semiconductor device property is provided. First, a semiconductor device is provided. Thereafter, a detecting current is applied and the semiconductor device is heated, and temperatures and voltages of the semiconductor device are measured, so as to establish a relationship between the temperatures and the voltages of the semiconductor device. Accordingly, a temperature sensitive parameter (TSP) is calculated. An apparatus for detecting a semiconductor device property is also provided.
    Type: Application
    Filed: September 27, 2012
    Publication date: February 20, 2014
    Inventors: Chien-Ping Wang, Tzung-Te Chen, Pei-Ting Chou, Chun-Fan Dai, Yi-Ping Peng
  • Publication number: 20140015531
    Abstract: The disclosure discloses a light emitting diode testing apparatus, which includes a power supply module, a probe, a control unit and a data acquisition unit. The power supply module provides a first current or a second current to a testing item. The probe measures characteristics of the testing item. The control unit controls the power supply module to provide the first current or the second current. The data acquisition unit acquires the characteristics of the testing item from the probe. The power supply module includes a first current source, at least one second current source and at least one protector. The first current source provides the first current to the testing item. The at least one second current source provides at least one additional current. The at least one protector prevents the first current from feeding back to the at least one second current source.
    Type: Application
    Filed: September 18, 2013
    Publication date: January 16, 2014
    Applicant: Industrial Technology Research Institute
    Inventors: Chien-Ping Wang, Tzung-Te Chen, Yen-Liang Liu, Chun-Fan Dai, Han-Kuei Fu, Pei-Ting Chou