Abstract: The invention provides a layout pattern of static random access memory (SRAM), which at least comprises a plurality of gate structures located on a substrate and spanning the plurality of fin structures to form a plurality of transistors distributed on the substrate, wherein the plurality of transistors comprise two pull-up transistors (PU), two pull-down transistors (PD) to form a latch circuit, and two access transistors (PG) connected to the latch circuit. In each SRAM memory cell, the fin structure included in the pull-up transistor (PU) is defined as a PU fin structure, the fin structure included in the pull-down transistor (PD) is defined as a PD fin structure, and the fin structure included in the access transistor (PG) is defined as a PG fin structure, wherein a width of the PD fin structure is wider than a width of the PG fin structure.

Abstract: A manufacturing method of a semiconductor device, comprises the following steps: providing a semiconductor substrate; forming a dummy insulation layer and a dummy electrode sequentially stacked on the semiconductor substrate; forming spacers on sidewalls of the dummy electrode; removing the dummy electrode to exposes inner sidewalls of the spacers; and performing an ion implantation process to the inner sidewalls of the spacers and the dummy insulation layer.

Abstract: An electronic device with a first region and a second region located around the first region is disclosed. The electronic device includes a first gate driver and a second gate driver disposed in the second region, and a first transistor and a second transistor disposed in the first region. The first gate driver is used for outputting a first signal. The second gate driver is used for outputting a second signal. The first transistor is used for receiving the first signal from the first gate driver. The second transistor is used for receiving the second signal from the second gate driver. In a top view of the electronic device, the first region has a first side and a second side opposite to the first side, and the first gate driver and the second gate driver are located more adjacent to the first side and away from the second side.

Abstract: Provided is a tap cell including a substrate, a first well, a second well, a first doped region, and the second doped region. The substrate has a first region and a second region. The first well has a first dopant type and includes a first portion disposed in the first region and a second portion extending into the second region. The second well has a second dopant type and includes a third portion disposed in the second region and a fourth portion extending into the first region. The first doped region having the first dopant type is disposed in the second portion of the first well and the third portion of the second well along the second region. The second doped region having the second dopant type is disposed in the first portion of the first well and the fourth portion of the second well along the first region.

Abstract: A blood pressure detection device manufactured by a semiconductor process includes a substrate, a microelectromechanical element, a gas-pressure-sensing element, a driving-chip element, an encapsulation layer and a valve layer. The substrate includes inlet apertures. The microelectromechanical element and the gas-pressure-sensing element are stacked and integrally formed on the substrate. The encapsulation layer is encapsulated and positioned on the substrate. A flowing-channel space is formed above the microelectromechanical element and the gas-pressure-sensing element. The encapsulation layer includes an outlet aperture in communication with an airbag. The driving-chip element controls the microelectromechanical element, the gas-pressure-sensing element and valve units to transport gas.

Abstract: A memory cell includes a transistor over a semiconductor substrate. The transistor includes a ferroelectric layer arranged along a sidewall of a word line. The ferroelectric layer includes a species with valence of 5, valence of 7, or a combination thereof. An oxide semiconductor layer is electrically coupled to a source line and a bit line. The ferroelectric layer is disposed between the oxide semiconductor layer and the word line.

Abstract: Electrostatic discharge (ESD) structures are provided. An ESD structure includes a semiconductor substrate, a first epitaxy region with a first type of conductivity over the semiconductor substrate, a second epitaxy region with a second type of conductivity over the semiconductor substrate, and a plurality of semiconductor layers. The semiconductor layers are stacked over the semiconductor substrate and between the first and second epitaxy regions. A first conductive feature is formed over the first epitaxy region and outside an oxide diffusion region. A second conductive feature is formed over the second epitaxy region and outside the oxide diffusion region. A third conductive feature is formed over the first epitaxy region and within the oxide diffusion region. A fourth conductive feature is formed over the second epitaxy region and within the oxide diffusion region. The oxide diffusion region is disposed between the first and second conductive features.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.

Abstract: The present disclosure provides a semiconductor device and a method for forming a semiconductor device. The semiconductor device includes a substrate, and a first gate dielectric stack over the substrate, wherein the first gate dielectric stack includes a first ferroelectric layer, and a first dielectric layer coupled to the first ferroelectric layer, wherein the first ferroelectric layer includes a first portion made of a ferroelectric material in orthorhombic phase, a second portion made of the ferroelectric material in monoclinic phase, and a third portion made of the ferroelectric material in tetragonal phase, wherein a total volume of the second portion is greater than a total volume of the first portion, and the total volume of the first portion is greater than a total volume of the third portion.

Abstract: An information handling system includes a host processing system and a Liquid Crystal Display device. The host processing system includes a graphics processing unit (GPU) and the LCD device includes a memory device and a DisplayPort Configuration Data (DPCD) register. The host processing system 1) determines whether the first GPU supports a Dynamic Display Shifting (DDS) mode, 2) when the GPU does not support the DDS mode, provides a first indication to the LCD device that the GPU does not support the DDS mode, and 3) when the GPU supports the DDS mode, provides a second indication to the LCD device that the GPU supports the DDS mode. The LCD device retrieves a Panel Self Refresh (PSR) setting from the memory device and stores the PSR setting to the DPCD register in response to the first indication, and retrieves a DDS setting from the memory and stores the DDS setting to the DPCD register in response to the second indication.

Abstract: The present disclosure provides a multi-state one-time programmable (MSOTP) memory circuit including a memory cell and a programming voltage driving circuit. The memory cell includes a MOS storage transistor, a first MOS access transistor and a second MOS access transistor electrically connected to store two bits of data. When the memory cell is in a writing state, the programming voltage driving circuit outputs a writing control potential to the gate of the MOS storage transistor, and when the memory cell is in a reading state, the programming voltage driving circuit outputs a reading control potential to the gate of the MOS storage transistor.

Abstract: A power plug device includes a first housing, a circuit board, a wire assembly and a second housing. The first housing includes an upper-housing body, a through hole and an inner cover. An accommodating portion is arranged in the upper-housing body, the through hole is formed on one side of the upper-housing body, the inner cover is installed in the accommodating portion, a receptive space is arranged in the inner cover, and the through hole interconnects with the receptive space. The wire assembly includes core wires, which passes through the through hole and the receptive space, so that the core wires are accommodated in the accommodating portion, and the receptive space is suitable for accommodating glue to secure the core wires and provides waterproof effect. In addition, dual-layered waterproof structure is used to make the first and second housing joining together having stronger waterproof effect.

Abstract: A power plug device includes a first housing, a circuit board, a wire assembly and a second housing. The first housing includes an upper-housing body, a through hole and an inner cover. An accommodating portion is arranged in the upper-housing body, the through hole is formed on one side of the upper-housing body, the inner cover is installed in the accommodating portion, a receptive space is arranged in the inner cover, and the through hole interconnects with the receptive space. The wire assembly includes core wires, which passes through the through hole and the receptive space, so that the core wires are accommodated in the accommodating portion, and the receptive space is suitable for accommodating glue to secure the core wires and provides waterproof effect. In addition, dual-layered waterproof structure is used to make the first and second housing joining together having stronger waterproof effect.

Abstract: The present invention provides a connector with waterproof structure and the manufacturing method, comprising: an base, providing the support of components in the connector; housing, enclose the components inside of the connector; the connecting groove, located on the base with slot shape; the connecting unit, mounted on the connecting groove and penetrated out with the base; the first retaining block, disposed between the connecting groove and the outer wall of the housing, separating the upper end of the base into a plurality of waterproof compartments, wherein the waterproof compartment is filled with waterproof glue; and the upper lid, upper lid, sealing the upper end of the base to achieve the purpose of preventing moisture and dust particles from entering the connector.

Abstract: The present invention provides a connector with waterproof structure and the manufacturing method, comprising: an base, providing the support of components in the connector; housing, enclose the components inside of the connector; the connecting groove, located on the base with slot shape; the connecting unit, mounted on the connecting groove and penetrated out with the base; the first retaining block, disposed between the connecting groove and the outer wall of the housing, separating the upper end of the base into a plurality of waterproof compartments, wherein the waterproof compartment is filled with waterproof glue; and the upper lid, upper lid, sealing the upper end of the base to achieve the purpose of preventing moisture and dust particles from entering the connector.

Abstract: This invention provides a power plug device and the manufacturing method thereof, the power plug device comprises a power-connected base; a cover is configured to the power-connected base, wherein the cover can cover the internal components of the power-connected base, such as at least one plug and a printed circuit board, a gap between the cover and a lid is filled with an insulating compound for preventing liquid ingress, and then the power plug device is sealed by using an ultrasonic welding.

Abstract: This invention provides a power plug device and the manufacturing method thereof, the power plug device comprises a power-connected base; a cover is configured to the power-connected base, wherein the cover can cover the internal components of the power-connected base, such as at least one plug and a printed circuit board, a gap between the cover and a lid is filled with an insulating compound for preventing liquid ingress, and then the power plug device is sealed by using an ultrasonic welding.

Abstract: A system for engaging devices having connectable electrical connectors includes a first device and a second device. The first device has a first electrical connector exposed at a first surface that is contoured to define one or more recesses, each of which has a lip. The second device has a second electrical connector exposed at a second surface that is contoured to define one or more gripping elements, each of which fits into one of the recesses to grip one of the lips when the first and second electrical connectors are connected together. The first device also has a movable element that can be positioned such that when the one or more gripping elements are in the one or more recesses and gripping the one or more lips, the movable element blocks the gripping elements from being moved out of the recesses or away from the lips.

Abstract: A system for engaging devices having connectable electrical connectors includes a first device and a second device. The first device has a first electrical connector exposed at a first surface that is contoured to define one or more recesses, each of which has a lip. The second device has a second electrical connector exposed at a second surface that is contoured to define one or more gripping elements, each of which fits into one of the recesses to grip one of the lips when the first and second electrical connectors are connected together. The first device also has a movable element that can be positioned such that when the one or more gripping elements are in the one or more recesses and gripping the one or more lips, the movable element blocks the gripping elements from being moved out of the recesses or away from the lips.

Abstract: An electrical plug device includes a housing, support members coupled to the housing and electrically conductive members, each supported by one of the support members. The support members are able to rotate about respective axes so that the electrically conductive members can move between a closed position with the electrically conductive members folded into a trough in the housing and an open position with the electrically conductive members extended out of the housing. An elastic member is coupled to the housing to engage one or more of the support members when the electrically conductive members are in the open position or the closed position. Rotation of the support members from the open or closed positions is inhibited by the engagement of the elastic member and the one or more support members.