Patents by Inventor Chun-Fu Lu

Chun-Fu Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12009409
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.
    Type: Grant
    Filed: March 6, 2023
    Date of Patent: June 11, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chung-Fu Chang, Kuan-Hung Chen, Guang-Yu Lo, Chun-Chia Chen, Chun-Tsen Lu
  • Publication number: 20240186447
    Abstract: The present disclosure provides a light-emitting device comprising a substrate with a topmost surface; a first semiconductor stack arranged on the substrate, and comprising a first top surface separated from the topmost surface by a first distance; a first bonding layer arranged between the substrate and the first semiconductor stack; a second semiconductor stack arranged on the substrate, and comprising a second top surface separated from the topmost surface by a second distance which is different form the first distance; a second bonding layer arranged between the substrate and the second semiconductor stack; a third semiconductor stack arranged on the substrate, and comprising third top surface separated from the topmost surface by a third distance; and a third bonding layer arranged between the substrate and the third semiconductor stack; wherein the first semiconductor stack, the second semiconductor stack, and the third semiconductor stack are configured to emit different color lights.
    Type: Application
    Filed: February 12, 2024
    Publication date: June 6, 2024
    Inventors: Chien-Fu HUANG, Chih-Chiang LU, Chun-Yu LIN, Hsin-Chih CHIU
  • Publication number: 20240174892
    Abstract: This disclosure relates to a polishing composition that includes an abrasive, at least two pH adjusters, a barrier film removal rate enhancer, a low-k removal rate inhibitor, and an azole-containing corrosion inhibitor. This disclosure also features a method of using the polishing composition to polish a substrate containing copper and silicon oxide.
    Type: Application
    Filed: November 21, 2023
    Publication date: May 30, 2024
    Inventors: Ting-Kai Huang, Yannan Liang, Bin Hu, Chun-Fu Chen, Ying-Shen Chuang, Tzu-Wei Chiu, Sung TsaiLin, Hanyu Fan, Hsin-Hsien Lu
  • Patent number: 11996298
    Abstract: A method for processing an integrated circuit includes forming a plurality of transistors. The method utilizes a reversed tone patterning process to selectively drive dipoles into the gate dielectric layers of some of the transistors while preventing dipoles from entering the gate dielectric layers of other transistors. This process can be repeated to produce a plurality of transistors each having different threshold voltages.
    Type: Grant
    Filed: August 18, 2022
    Date of Patent: May 28, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Lung-Kun Chu, Jia-Ni Yu, Chun-Fu Lu, Kuo-Cheng Chiang, Chih-Hao Wang
  • Patent number: 11972972
    Abstract: A method for forming an isolation structure includes: forming a trench at a surface of a substrate; forming a mask pattern on the substrate, wherein the mask pattern has an opening communicated with the trench; filling a first isolation material layer in the opening and the trench, wherein a surface of the first isolation material layer defines a first recess; filling a second isolation material layer into the first recess; partially removing the first and second isolation material layers, to form a second recess, performing first and second oblique ion implantation processes, to form damage regions in the first isolation material layer; performing a decoupled plasma treatment, to transform portions of the damage regions into a protection layer having etching selectivity with respect to the damage regions; and removing the damage regions.
    Type: Grant
    Filed: October 12, 2021
    Date of Patent: April 30, 2024
    Assignee: Winbond Electronics Corp.
    Inventors: Che-Jui Hsu, Ying-Fu Tung, Chun-Sheng Lu, Mu-Lin Li
  • Publication number: 20240120402
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.
    Type: Application
    Filed: November 19, 2023
    Publication date: April 11, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jia-Ni YU, Kuo-Cheng CHIANG, Mao-Lin HUANG, Lung-Kun CHU, Chung-Wei HSU, Chun-Fu LU, Chih-Hao WANG, Kuan-Lun CHENG
  • Publication number: 20240113195
    Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.
    Type: Application
    Filed: February 22, 2023
    Publication date: April 4, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jia-Ni YU, Lung-Kun CHU, Chun-Fu LU, Chung-Wei HSU, Mao-Lin HUANG, Kuo-Cheng CHIANG, Chih-Hao WANG
  • Publication number: 20240096994
    Abstract: A method for forming a semiconductor device is provided. The method includes forming a plurality of first channel nanostructures and a plurality of second channel nanostructures in an n-type device region and a p-type device region of a substrate, respectively, and sequentially depositing a gate dielectric layer, an n-type work function metal layer, and a cap layer surrounding each of the first and second channel nanostructures. The cap layer merges in first spaces between adjacent first channel nanostructures and merges in second spaces between adjacent second channel nanostructures. The method further includes selectively removing the cap layer and the n-type work function metal layer in the p-type device region, and depositing a p-type work function metal layer over the cap layer in the n-type device region and the gate dielectric layer in the p-type device region. The p-type work function metal layer merges in the second spaces.
    Type: Application
    Filed: February 10, 2023
    Publication date: March 21, 2024
    Inventors: Lung-Kun CHU, Jia-Ni YU, Chun-Fu LU, Mao-Lin HUANG, Kuo-Cheng CHIANG, Chih-Hao WANG
  • Publication number: 20240089000
    Abstract: An optical fiber network device includes a fiber and a photonic integrated circuit. Fiber receives a first optical signal and transmits a second optical signal. A first wavelength of first optical signal is different from a second wavelength of second optical signal. Photonic integrated circuit includes a laser chip, a photodetector, a wavelength division multiplexing coupler, a first optical modulation element and a second optical modulation element. Laser chip is disposed on photonic integrated circuit, and is configured to generate first optical signal. Photodetector detects second optical signal. Wavelength division multiplexing coupler is configured to couple first optical signal to fiber, and receives second optical signal. First optical modulation element is coupled to wavelength division multiplexing coupler and laser chip, and is configured to modulate first optical signal.
    Type: Application
    Filed: September 14, 2023
    Publication date: March 14, 2024
    Applicant: AuthenX Inc.
    Inventors: Sheng-Fu LIN, Po-Kuan SHEN, Chun-Chiang YEN, Yi-Ting LU, Jun-Rong CHEN, Jenq-Yang CHANG, Mao-Jen WU
  • Publication number: 20240085634
    Abstract: An optical fiber transmission device includes a substrate, a photonic integrated circuit, and an optical fiber assembly. The photonic integrated circuit is disposed on an area of the substrate. The substrate has a protruding structure at an interface with an edge of the photonic integrated circuit. The optical fiber assembly includes an optical fiber and a ferrule that sleeves the optical fiber. The protruding structure of the substrate is configured to abut against the ferrule to limit the position of the optical fiber assembly in a vertical direction of the substrate, such that the protruding structure is a stopper for the optical fiber assembly in the vertical direction.
    Type: Application
    Filed: September 14, 2023
    Publication date: March 14, 2024
    Applicant: AuthenX Inc.
    Inventors: Chun-Chiang YEN, Po-Kuan SHEN, Sheng-Fu LIN, Yi-Ting LU, Jun-Rong CHEN, Jenq-Yang CHANG, Mao-Jen WU
  • Patent number: 11914277
    Abstract: An illumination system for providing an illumination beam includes red, blue, and green light source modules, a first light combining element, and a light uniforming element. The red light source module includes a first red light emitting element emitting first red light and a second red light emitting element emitting second red light. A peak wavelength of the second red light is greater than a peak wavelength of the first red light. The blue light source module includes a first blue light emitting element emitting first blue light and a second blue light emitting element emitting second blue light. A peak wavelength of the second blue light is less than a peak wavelength of the first blue light. The green light source module generates green light. The first light combining element guides these lights into the light uniforming element, so that the illumination system outputs the illumination beam.
    Type: Grant
    Filed: January 18, 2022
    Date of Patent: February 27, 2024
    Assignee: Coretronic Corporation
    Inventors: Hung-Yu Lin, Chi-Fu Liu, Chun-Hsin Lu, Chun-Li Chen
  • Publication number: 20240014265
    Abstract: The present disclosure describes a semiconductor device having an isolation structure. The semiconductor structure includes a set of nanostructures on a substrate, a gate dielectric layer wrapped around the set of nanostructures, a work function metal layer on the gate dielectric layer and around the set of nanostructures, and the isolation structure adjacent to the set of nanostructures and in contact with the work function metal layer. A portion of the work function metal layer is on a top surface of the isolation structure.
    Type: Application
    Filed: March 22, 2023
    Publication date: January 11, 2024
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Lung-Kun CHU, Jia-Ni YU, Chun-Fu LU, Chung-Wei HSU, Mao-Lin HUANG, Kuo-Cheng CHIANG, Chih-Hao WANG
  • Patent number: 11862700
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.
    Type: Grant
    Filed: March 19, 2021
    Date of Patent: January 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jia-Ni Yu, Kuo-Cheng Chiang, Mao-Lin Huang, Lung-Kun Chu, Chung-Wei Hsu, Chun-Fu Lu, Chih-Hao Wang, Kuan-Lun Cheng
  • Publication number: 20230411479
    Abstract: A semiconductor device and a manufacturing method thereof are provided. The method includes the following steps. A fin structure extending along a first direction and having a lower fin structure and an upper fin structure disposed over the lower fin structure is formed, the upper fin structure includes first semiconductor layers and second semiconductor layers alternately stacked. A sacrificial gate structure extending along a second direction perpendicular to the first direction is formed over the upper fin structure. Gate spacers are formed on the sacrificial gate structure. A portion of the sacrificial gate structure is removed to expose the gate spacers. Portions of the exposed gate spacers are removed to form a first gate trench with a first dimension along the first direction. The rest of the sacrificial gate structure is removed to form a second gate trench with a second dimension along the first direction under the first gate trench, wherein the first dimension is greater than the second dimension.
    Type: Application
    Filed: June 16, 2022
    Publication date: December 21, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Lung-Kun Chu, Jia-Ni Yu, Chun-Fu Lu, Chung-Wei Hsu, Kuo-Cheng Chiang, Chih-Hao Wang
  • Publication number: 20230360926
    Abstract: A method for processing an integrated circuit includes forming a plurality of transistors. The method utilizes a reversed tone patterning process to selectively drive dipoles into the gate dielectric layers of some of the transistors while preventing dipoles from entering the gate dielectric layers of other transistors. This process can be repeated to produce a plurality of transistors each having different threshold voltages.
    Type: Application
    Filed: August 18, 2022
    Publication date: November 9, 2023
    Inventors: Lung-Kun CHU, Jia-Ni YU, Chun-Fu LU, Kuo-Cheng CHIANG, Chih-Hao WANG
  • Publication number: 20230127045
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a fin structure formed over a substrate, and a gate structure formed over the fin structure. The gate structure includes a gate dielectric layer, a first conductive layer over the first conductive layer. The gate structure includes a fill layer over the first conductive layer. The semiconductor device structure includes a protection layer formed over the fill layer, and a top surface of the gate dielectric layer is lower than a top surface of the protection layer and higher than a top surface of the first conductive layer.
    Type: Application
    Filed: December 19, 2022
    Publication date: April 27, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Mao-Lin HUANG, Lung-Kun CHU, Chung-Wei HSU, Jia-Ni YU, Chun-Fu LU, Kuo-Cheng CHIANG, Kuan-Lun CHENG, Chih-Hao WANG
  • Publication number: 20230120117
    Abstract: A method of forming a semiconductor device includes forming a first dielectric layer over a first channel region in a first region and over a second channel region in a second region; introducing a first dipole element into the first dielectric layer in the first region to form a first dipole-containing gate dielectric layer in the first region; forming a second dielectric layer over the first dipole-containing gate dielectric layer; introducing fluorine into the second dielectric layer to form a first fluorine-containing gate dielectric layer over the first dipole-containing gate dielectric layer; and forming a gate electrode over the first fluorine-containing gate dielectric layer.
    Type: Application
    Filed: March 25, 2022
    Publication date: April 20, 2023
    Inventors: Chung-Wei Hsu, Kuo-Cheng Chiang, Mao-Lin Huang, Lung-Kun Chu, Jia-Ni Yu, Chun-Fu Lu, Chih-Hao Wang
  • Patent number: 11563109
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a fin structure formed over a substrate, and a gate structure formed over the fin structure. The gate structure includes a first layer, and a fill layer over the first layer. The gate structure includes a protection layer formed over the fill layer of the gate structure, and the protection layer is separated from the first layer by the fill layer.
    Type: Grant
    Filed: April 9, 2021
    Date of Patent: January 24, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Mao-Lin Huang, Lung-Kun Chu, Chung-Wei Hsu, Jia-Ni Yu, Chun-Fu Lu, Kuo-Cheng Chiang, Kuan-Lun Cheng, Chih-Hao Wang
  • Publication number: 20220320089
    Abstract: A semiconductor device is provided. The semiconductor device includes first channel nanostructures in a first device region, second channel nanostructures in a second device region, a dielectric fin at a boundary between the first device region and the second device region, a high-k dielectric layer surrounding each of the first channel nanostructures and each of the second channel nanostructures and over the dielectric fin, a first work function layer surrounding each of the first channel nanostructures and over the high-k dielectric layer and a second work function layer surrounding each of the second channel nanostructures and over the high-k dielectric layer and the first work function layer. The first work functional layer fully fills spaces between the first channel nanostructures and has an edge located above the dielectric fin. The second work functional layer fully fills spaces between the second channel nanostructures.
    Type: Application
    Filed: September 15, 2021
    Publication date: October 6, 2022
    Inventors: Lung-Kun CHU, Mao-Lin HUANG, Chung-Wei HSU, Jia-Ni YU, Chun-Fu LU, Kuo-Cheng CHIANG, Kuan-Lun CHENG, Chih-Hao WANG
  • Publication number: 20220302275
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.
    Type: Application
    Filed: March 19, 2021
    Publication date: September 22, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jia-Ni YU, Kuo-Cheng CHIANG, Mao-Lin HUANG, LUNG-KUN CHU, Chung-Wei HSU, Chun-Fu LU, CHIH-HAO WANG, KUAN-LUN CHENG