Abstract: A backlight module includes a reflective plate, a plurality of light-emitting elements and a plurality of light guide plates. The reflective plate has light source grooves and first position limiting parts, and each light source groove has a reflective surface, a light outlet and a bottom side. The reflective surface is located between the light outlet and the bottom side. The first position limiting parts are respectively connected to the reflective surfaces and are respectively close to the light outlets. The light-emitting elements are respectively disposed in the light source grooves and respectively surrounded by the reflective surfaces. The light guide plates are respectively disposed in the light source grooves and respectively located between the reflective surfaces and the light-emitting elements. The first position limiting parts are respectively adapted to block the light guide plates from being separated from the reflective plate from the light outlets.

Abstract: Provided is a low-dose interferon composition for treatment or prevention of conditions, diseases or disorders associated with inflammation in cat. The composition comprises a total concentration of human interferon-?2b in a range of 160 IU/ml to 100,000 IU/ml. The composition is orally administered buccally.

Abstract: The present application provides a process for manufacturing an orally disintegrating tablet (ODT) comprising a cytokine as an active pharmaceutical ingredient comprising: acidifying an excipient, conducting a first granulation step of the acidified excipient to obtain acidic powders, and conducting a second granulation step by mixing the acidic powders and the cytokine to obtain granules containing the cytokine. The present application also provides an ODT manufactured by the process.

Abstract: A wafer processing method including following steps is provided. A release layer is formed on a first wafer. An adhesive layer is formed on a second wafer. One of the first wafer and the second wafer is a device wafer. The device wafer includes a valid die region and a trimming region. A handler is applied to place the first wafer on the second wafer, so that the release layer and the adhesive layer are bonded to each other, and the adhesive layer completely covers the valid die region. During the process of placing the first wafer on the second wafer, the handler directly moves the first wafer.

Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle ?1, a second curve having a second angle ?2 and a third curve having a third angle ?3, wherein ?3>?2>?1 .

Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode.

Abstract: A light-emitting device comprises a carrier; a first semiconductor element formed on the carrier and comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is, the first semiconductor structure comprises a first active layer emitting a first light having a first dominant wavelength during a normal operation, and the second semiconductor structure comprises a second active layer; and a bridge on a side surface of the second active layer of the second semiconductor structure.

Abstract: A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation.

Abstract: A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation.