Abstract: A wafer processing method including following steps is provided. A release layer is formed on a first wafer. An adhesive layer is formed on a second wafer. One of the first wafer and the second wafer is a device wafer. The device wafer includes a valid die region and a trimming region. A handler is applied to place the first wafer on the second wafer, so that the release layer and the adhesive layer are bonded to each other, and the adhesive layer completely covers the valid die region. During the process of placing the first wafer on the second wafer, the handler directly moves the first wafer.

Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle ?1, a second curve having a second angle ?2 and a third curve having a third angle ?3, wherein ?3>?2>?1 .

Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode.

Abstract: A light-emitting device comprises a carrier; a first semiconductor element formed on the carrier and comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is, the first semiconductor structure comprises a first active layer emitting a first light having a first dominant wavelength during a normal operation, and the second semiconductor structure comprises a second active layer; and a bridge on a side surface of the second active layer of the second semiconductor structure.

Abstract: A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation.

Abstract: A light-emitting device comprises a carrier; and a first semiconductor element comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is to the carrier, the first semiconductor structure comprises a first MQW structure configured to emit a first light having a first dominant wavelength during normal operation, and the second semiconductor structure comprises a second MQW structure configured not to emit light during normal operation.