Abstract: The present disclosure is a wafer support, which includes a heating unit, an insulating-and-heat-conducting unit and a conduct portion, wherein the insulating-and-heat-conducting unit is positioned between the conduct portion and the heating unit. During a deposition process, an AC bias is formed on the conduct portion to attract a plasma disposed thereabove. The heating unit includes at least one heating coil, wherein the heating coil heats the wafer supported by the wafer support via the insulating-and-heat-conducting unit and the conduct portion. The insulating-and-heat-conducting unit electrically insulates the heating unit and the conduct portion to prevent the AC flowing in the heating coil and the AC bias on the conduct portion from conducting each other, so the wafer support can generate a stable AC bias and temperature to facilitate forming an evenly-distributed thin film on the wafer supported by the wafer support.

Abstract: The present disclosure is a wafer support, which includes a heating unit, an insulating-and-heat-conducting unit and a conduct portion, wherein the insulating-and-heat-conducting unit is positioned between the conduct portion and the heating unit. During a deposition process, an AC bias is formed on the conduct portion to attract a plasma disposed thereabove. The heating unit includes at least one heating coil, wherein the heating coil heats the wafer supported by the wafer support via the insulating-and-heat-conducting unit and the conduct portion. The insulating-and-heat-conducting unit electrically insulates the heating unit and the conduct portion to prevent the AC flowing in the heating coil and the AC bias on the conduct portion from conducting each other, so the wafer support can generate a stable AC bias and temperature to facilitate forming an evenly-distributed thin film on the wafer supported by the wafer support.

Abstract: A wafer holder for generating a stable bias voltage, which mainly includes a holder, a ring member, and a cover ring, wherein a supporting surface of the holder is used to carry at least one wafer, and the ring member is arranged on the holder and located around the supporting surface and the wafer. The ring member includes an outer surface and an inner surface, wherein the inner surface of the ring member covers a part of the side surface of the holder and makes parts of the side surface exposed. When the cover ring is connected to the ring member, a shielding portion of the cover ring will cover the exposed side surface of the holder to avoid a film being formed on the exposed side surface of the holder to facilitate the formation of a uniform and stable bias voltage on the wafer holder.

Abstract: A masking structure for a wafer supporting plate comprises a cavity; a carrying tray having a plurality of recesses in a top surface thereof for receiving a plurality of wafers; the carrying tray can be transferred into and out of the cavity by using a robot; a supporting plate installed within the cavity and below the carrying tray; the supporting plate could move upwards, and downwards; a mask installed within the cavity and above the carrying tray; the mask formed with a plurality of through holes which are positioned and shaped to be corresponding to those of the wafers on the carrying tray; therefore, when the supporting plate lifts the carrying tray to be near the mask, the wafers are exposed out of the through holes.

Abstract: A vapor reduction device for a semiconductor wafer has a plurality of heat plates which are spaced arranged longitudinally for receiving a plurality of wafers, the heat plates are integrated into a heating frame which is further placed into a casing. The movements of the heat plates within the casing causes that the wafers can be heated rapidly and uniformly so as to evaporated vapor effectively. The heat plates are separable from the heating frame and thus a number of the heat plates is selectable as desired. The heating temperature for the heat plates is controllable independently so that the temperatures of the wafers are controllable so that the temperature differences of the wafers are controllable to be uniformly distributed.

Abstract: A plasma etching reaction chamber includes a casing having a receiving chamber; a base liftably installed below the receiving chamber; a first electrode and a second electrode; and a radio frequency electrode rod. The second electrode has a plurality of water channels and a bottom of the second electrode is installed with two cooling water tubes which are communicated with the plurality of water channels; upper sides of the two cooling water tubes are hidden within the driving rod and lower sides thereof extend downwards to be out of the casing so that external cooling water can flow into the cooling water tubes and then to the water channels to achieve the object of cooling.

Abstract: An organic light-emitting diode panel and a manufacturing method using the same are provided in the present invention. The OLED panel includes at least a pixel. The pixel includes an anode conducting layer, an insulation layer, an emitting layer (EML), a cathode layer and a reference voltage layer. The anode conducting layer is disposed on a transparent substrate. The insulation layer is disposed on the anode conducting layer and has a first cavity and a second cavity, wherein there is a distance between the first anode layer and the bottom of second cavity. There are a hole injection layer (HIL) and a hole transmission layer (HTL). The HIL is disposed on the first anode conducting layer. The HTL is disposed on the HIL. There are a cathode layer, an electronic injection layer (EIL) and an electronic transmission layer (ETL) in the second cavity. The cathode layer is exposed by the bottom of the second cavity. The EIL is disposed on the cathode layer. The ETL is disposed on the EIL.

Abstract: An organic light-emitting diode panel and a manufacturing method using the same are provided in the present invention. The OLED panel includes at least a pixel. The pixel includes an anode conducting layer, an insulation layer, an emitting layer (EML), a cathode layer and a reference voltage layer. The anode conducting layer is disposed on a transparent substrate. The insulation layer is disposed on the anode conducting layer and has a first cavity and a second cavity, wherein there is a distance between the first anode layer and the bottom of second cavity. There are a hole injection layer (HIL) and a hole transmission layer (HTL). The HIL is disposed on the first anode conducting layer. The HTL is disposed on the HIL. There are a cathode layer, an electronic injection layer (EIL) and an electronic transmission layer (ETL) in the second cavity. The cathode layer is exposed by the bottom of the second cavity. The EIL is disposed on the cathode layer. The ETL is disposed on the EIL.

Abstract: An organic light-emitting diode panel and a manufacturing method using the same are provided in the present invention. The OLED panel includes at least a pixel. The pixel includes an anode conducting layer, an insulation layer, an emitting layer (EML), a cathode layer and a reference voltage layer. The anode conducting layer is disposed on a transparent substrate. The insulation layer is disposed on the anode conducting layer and has a first cavity and a second cavity, wherein there is a distance between the first anode layer and the bottom of second cavity. There are a hole injection layer (HIL) and a hole transmission layer (HTL). The HIL is disposed on the first anode conducting layer. The HTL is disposed on the HIL. There are a cathode layer, an electronic injection layer (EIL) and an electronic transmission layer (ETL) in the second cavity. The cathode layer is exposed by the bottom of the second cavity. The EIL is disposed on the cathode layer. The ETL is disposed on the EIL.

Abstract: An organic light-emitting diode panel and a manufacturing method using the same are provided in the present invention. The OLED panel includes at least a pixel. The pixel includes a anode conducting layer, an insulation layer, an emitting layer (EML), a cathode layer and a reference voltage layer. The anode conducting layer is disposed on a transparent substrate. The insulation layer is disposed on the anode conducting layer and has a first cavity and a second cavity, wherein there is a distance between the first anode layer and the bottom of second cavity. There are a hole injection layer (HIL) and a hole transmission layer (HTL). The HIL is disposed on the first anode conducting layer. The HTL is disposed on the HIL. There are a cathode layer, an electronic injection layer (EIL) and an electronic transmission layer (ETL) in the second cavity. The cathode layer is exposed by the bottom of the second cavity. The EIL is disposed on the cathode layer. The ETL is disposed on the EIL.

Abstract: A headphone having a headband and two acoustic transducers disposed at two ends of the headband is disclosed. Each acoustic transducer includes a baffle plate installed with a speaker, a spacer, a vent and an acoustic modulator. The baffle plate and speaker divide the acoustic transducer into a front and a back chamber. The front chamber is configured for communicating with a user's ear. The spacer is disposed behind the speaker to divide the back chamber into a first back chamber and a second back communicated with each other. The vent is disposed in a back wall of the acoustic transducer to communicate the first back chamber with outside. The first acoustic modulator is disposed between the front and second back chambers. The headphone modulates resonance frequency at low frequency bands through the acoustic modulator.

Abstract: A headphone having a headband and two acoustic transducers disposed at two ends of the headband is disclosed. Each acoustic transducer includes a baffle plate installed with a speaker, a spacer, a vent and an acoustic modulator. The baffle plate and speaker divide the acoustic transducer into a front and a back chamber. The front chamber is configured for communicating with a user's ear. The spacer is disposed behind the speaker to divide the back chamber into a first back chamber and a second back communicated with each other. The vent is disposed in a back wall of the acoustic transducer to communicate the first back chamber with outside. The first acoustic modulator is disposed between the front and second back chambers. The headphone modulates resonance frequency at low frequency bands through the acoustic modulator.

Abstract: A gate driver and a display device are disclosed. The gate driver includes an image data receiving interface, an image processing unit, a timing controller, and a gate driving unit. The image data receiving interface receives an input signal and transfers the same to a display image signal and a display control signal. The image processing unit receives the display image signal and transfers the same to a display data. The timing controller transfers the display control signal into a first and second control signals. The first control signal and the display data are output to a source driver. The gate driving unit receives the second control signal to drive gate scanning lines accordingly, and the gate driving unit sequentially drives the gate scanning lines according to the second control signal. The source driver supplies the display data to pixels according to the first control signal.

Abstract: The present invention applies management frame defined in IEEE 802.11 standard to a wireless distribution system (WDS) mode by adding an information element (IE) into the management frame, which enables any access point (AP) in WDS to maintain IE based on its own setting and state, then send IE via the management frame for providing state of the AP under WDS mode, determine whether a physical link (i.e., a wireless link between APs) should be established therewith based on received IE, and maintain the established physical link through the wireless management frame in a real time manner. Thus, the existence and necessity of the physical link between different APs in WDS can be determined correctly.

Abstract: The present invention applies management frame defined in IEEE 802.11 standard to a wireless distribution system (WDS) mode by adding an information element (IE) into the management frame, which enables any access point (AP) in WDS to maintain IE based on its own setting and state, then send IE via the management frame for providing state of the AP under WDS mode, determine whether a physical link (i.e., a wireless link between APs) should be established therewith based on received IE, and maintain the established physical link through the wireless management frame in a real time manner. Thus, the existence and necessity of the physical link between different APs in WDS can be determined correctly.

Abstract: A method is provided. The method includes displaying a first image pixel on a first display pixel of a plurality of display pixels of a monitor, and displaying a second image pixel following the first image pixel on a portion of sub-pixels of the first display pixel and a portion of sub-pixels of a second display pixel so as to avoid loss of image data when displaying the image pixels on a monitor of a small resolution.

Abstract: The present invention applies management frame defined in IEEE 802.11 standard to a wireless distribution system (WDS) mode by adding an information element (IE) into the management frame, which enables any access point (AP) in WDS to maintain IE based on its own setting and state, then send IE via the management frame for providing state of the AP under WDS mode, determine whether a physical link (i.e., a wireless link between APs) should be established therewith based on received IE, and maintain the established physical link through the wireless management frame in a real time manner. Thus, the existence and necessity of the physical link between different APs in WDS can be determined correctly.

Abstract: A driving system and a driving method for motion pictures are described, using an input, a black image insertion module, an advanced overdrive module, and a partial frame rate control module. The input receives a first frame and a second frame in order. The black image insertion module inserts a single fixed gray level frame between the first frame and the second frame. The advanced overdrive module increases the second frame to (n+a) bits and converts the same to the overdrive image, in which the first frame and the second frame are n bits. The partial frame rate control module smoothes the overdrive image and converts the same to an output image to refresh the pixels from the single fixed gray level frame to the second frame.

Abstract: A heat dissipating device with protection function is used for assembling around a heat generation element. The heat dissipating device includes a plurality of heat dissipating fins. The heat dissipating fins have a circular array with each heat dissipating fin connecting to another. A receiving space is defined in a central position of the heat dissipating fins for positioning the heat generating element. Each heat dissipating fin includes a laminated body. The laminated body includes an inner lateral edge and an outer lateral edge opposite to the inner lateral edge. A flange is backwardly formed on a section of the outer lateral edge. A user can avoid to be cut by the flange when disassembling the heat dissipating device.

Abstract: In a semiconductor element, and a display pixel and a display panel using the same, the semiconductor element includes a first electrode, a second electrode, an organic light-emitting layer and a third electrode. The second electrode and the first electrode are disposed separately. The organic light-emitting layer is electrically connected with the first electrode and the second electrode. The third electrode is disposed above the organic light-emitting layer.