Patents by Inventor Chun-Han Chuang

Chun-Han Chuang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Foldable board with flexible PCB coupling
    Patent number: 10856409
    Abstract: A junction between two circuit board segments can be made using a flexible printed circuit board (PCB), permitting the two circuit board segments to be movably positioned with respect to one another, while maintaining electrical connections between the board segments through the junction. Such a design with flexible PCB junctions can allow a single, foldable board with multiple board segments to be used in place of a set of multiple circuit boards that must couple together using connectors and cables.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: December 1, 2020
    Assignee: QUANTA COMPUTER INC.
    Inventors: Chun-Han Chuang, Ying-Che Chang
  • Method of cleaning reaction chamber, method of forming protection film and protection wafer
    Patent number: 7732009
    Abstract: A method of cleaning a reaction chamber having a wafer holder is provided. First, the reaction chamber is cleaned by a cleaning gas. Next, a protection film is formed on the inner surface of the reaction chamber, wherein a gap is formed between the protection wafer and the wafer holder, and a cooling gas is guided therebetween simultaneously.
    Type: Grant
    Filed: September 26, 2006
    Date of Patent: June 8, 2010
    Assignee: United Microelectronics Corp.
    Inventors: Chih-Jen Mao, Chun-Hung Hsia, Ta-Ching Yang, Chun-Cheng Yu, Chien-Fu Chu, Kuo-Wei Yang, Chun-Han Chuang, Hui-Shen Shih
  • Method for manufacturing semiconductor device that includes baking a dielectric layer after exposure to plasma
    Patent number: 7510964
    Abstract: The invention is directed to a method for manufacturing semiconductor device. The method comprises steps of providing a substrate and then forming a dielectric material-containing device over the substrate. A plasma vapor deposition process is performed to form a dielectric layer over the substrate. A first baking process is performed.
    Type: Grant
    Filed: January 26, 2006
    Date of Patent: March 31, 2009
    Assignee: United Microelectronics Corp.
    Inventors: Chih-Jen Mao, Kuo-Wei Yang, Hui-Shen Shih, Chun-Han Chuang
  • Method of preventing a peeling issue of a high stressed thin film
    Patent number: 7482244
    Abstract: A wafer including a high stressed thin film thereon is lifted, and a pre-heating process is performed while the wafer is lifted. Subsequently, a dielectric layer is deposited on the high stressed thin film.
    Type: Grant
    Filed: September 16, 2005
    Date of Patent: January 27, 2009
    Assignee: United Microelectronics Corp.
    Inventors: Chih-Jen Mao, Hui-Shen Shih, Kuo-Wei Yang, Chun-Han Chuang, Chun-Hung Hsia
  • METHOD OF CLEANING REACTION CHAMBER, METHOD OF FORMING PROTECTION FILM AND PROTECTION WAFER
    Publication number: 20080075852
    Abstract: A method of cleaning a reaction chamber having a wafer holder is provided. First, the reaction chamber is cleaned by a cleaning gas. Next, a protection film is formed on the inner surface of the reaction chamber, wherein a gap is formed between the protection wafer and the wafer holder, and a cooling gas is guided therebetween simultaneously.
    Type: Application
    Filed: September 26, 2006
    Publication date: March 27, 2008
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chih-Jen Mao, Chun-Hung Hsia, Ta-Ching Yang, Chun-Cheng Yu, Chien-Fu Chu, Kuo-Wei Yang, Chun-Han Chuang, Hui-Shen Shih
  • METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20070173065
    Abstract: The invention is directed to a method for manufacturing semiconductor device. The method comprises steps of providing a substrate and then forming a dielectric material-containing device over the substrate. A plasma vapor deposition process is performed to form a dielectric layer over the substrate. A first baking process is performed.
    Type: Application
    Filed: January 26, 2006
    Publication date: July 26, 2007
    Inventors: Chih-Jen Mao, Kuo-Wei Yang, Hui-Shen Shih, Chun-Han Chuang
  • METHOD OF PREVENTING A PEELING ISSUE OF A HIGH STRESSED THIN FILM
    Publication number: 20070066026
    Abstract: A wafer including a high stressed thin film thereon is lifted, and a pre-heating process is performed while the wafer is lifted. Subsequently, a dielectric layer is deposited on the high stressed thin film.
    Type: Application
    Filed: September 16, 2005
    Publication date: March 22, 2007
    Inventors: Chih-Jen Mao, Hui-Shen Shih, Kuo-Wei Yang, Chun-Han Chuang, Chun-Hung Hsia