Abstract: An aluminum etchant includes 3-30 wt % of hydrochloric acid, 4-20 wt % of sulfuric acid, 1-5 wt % of oxidizing agent, 0.5-2 wt % of surfactant, and water for the rest. The etchant can produce circuits of 200-25 ?m wide on an aluminum foil or aluminum plate. The circuit has good quality. Therefore, the invention is suitable for miniaturized products that require higher precision.

Abstract: An aluminum etchant includes 3-30 wt % of hydrochloric acid, 4-20 wt % of sulfuric acid, and water for the rest. The etchant can produce circuits of 200-25 ?m wide on an aluminum foil or aluminum plate. The circuit has good quality. Therefore, the invention is suitable for miniaturized products that require higher precision.

Abstract: A golf club head includes a striking face having a plurality of grooves formed therein. At least one groove includes a first curved side surface, a second curved side surface opposite to the first curved side surface, and a bottom surface connecting the first and the second curved side surfaces. As viewed in the longitudinal direction of the at least one groove, the first and the second curved surfaces respectively have first and second involute profiles. A distance measured between the first and the second curved surfaces continuously increases from the bottom surface to the striking face.

Abstract: A golf club head includes a striking face having a plurality of grooves formed therein. At least one groove includes a first curved side surface, a second curved side surface opposite to the first curved side surface, and a bottom surface connecting the first and the second curved side surfaces. As viewed in the longitudinal direction of the at least one groove, the first and the second curved surfaces respectively have first and second involute profiles. A distance measured between the first and the second curved surfaces continuously increases from the bottom surface to the striking face.

Abstract: A method for producing an oxide confined semiconductor laser uses a dual platform to synchronously produce a light emitting active area and a wire bonding area on a semiconductor material and use a metal protective material, an electrically conductive metal material, and a dielectric material together with an etching process, an oxide confined technology, and plating technology to produce the dual platform, an oxide layer, a dielectric layer, a protective layer, and a metal layer. The light emitting active area platform and the wire bonding area platform are independent, and the wire bonding area platform is produced on the semiconductor structure, such that an ion implant process can adjust the capacitance and provide a higher wire bonding strength. Since the electric layer is filled on the external sides of the dual platforms, the wire connected metal capacitance is lowered, and the planarization facilitates the production of the metal layer.

Abstract: A dual platform semiconductor laser device includes a laser chip layer, two independent platforms formed on the laser chip layer and defining a light emitting active area platform and a wire bonding platform, a planarized dielectric layer filled between the independent platforms, a protective layer disposed at the dielectric layer and including a contact area hole corresponding to the first independent platform, coated onto the metal layer at the protective layer and coupled to the first independent platform, and extended to the second independent platform to form a pad for wire bonding the first independent platform. The independent platforms define the second independent platform for wire bonding, and its capacitance is modulated to provide a stronger wire bonding strength, and the dielectric layer filled at the external sides of the two platforms lowers the wire connected metal capacitance and obtain a planarized surface for producing the metal layer easily.

Abstract: A method for producing an oxide confined semiconductor laser uses a dual platform to synchronously produce a light emitting active area and a wire bonding area on a semiconductor material and use a metal protective material, an electrically conductive metal material, and a dielectric material together with an etching process, an oxide confined technology, and plating technology to produce the dual platform, an oxide layer, a dielectric layer, a protective layer, and a metal layer. The light emitting active area platform and the wire bonding area platform are independent, and the wire bonding area platform is produced on the semiconductor structure, such that an ion implant process can adjust the capacitance and provide a higher wire bonding strength. Since the electric layer is filled on the external sides of the dual platforms, the wire connected metal capacitance is lowered, and the planarization facilitates the production of the metal layer.

Abstract: The optical recording medium protection cassette of the present invention comprises a housing, a clasping member and at least one switch member. A first opening for retaining an optical recording medium is formed on a first lateral side of the housing and a groove is formed on the inside of a second lateral side which is perpendicular to the first lateral side. The clasping member is in engagement with the first opening of the housing to restrict the optical recording medium to be located within the housing. The clasping member is provided with at least a first buckling portion and at least a V-shaped portion having a first side and a second side. Each switch member has a first end as a second buckling portion fastened to the first buckling portion of the clasping member, which makes the switch member rotate relative to the first buckling portion, and a second end which is a positioning portion substantially stops at either the first side or the second side of the V-shaped portion.

Abstract: A V-groove mold fabrication method is disclosed. The method for fabricating a V-groove mold includes the following steps: (a) providing a matrix substrate having a plurality of V-grooves, and then forming a metal layer on said matrix substrate; immersing said matrix substrate having said metal layer thereon with an electroforming metal ion solution and forming a father mold by an electroforming process; and separating said father mold from said matrix substrate.

Abstract: A write-once high density optical storage medium. The optical storage medium is applicable in an optical read or write system with blue laser having a wavelength in between 385 nm to 425 nm and an objective lens with numerical aperture (NA) greater than 0.8 and includes the following film structure: a substrate; a reflective layer disposed on the substrate; a dye recording layer disposed on the reflective layer; a protective layer disposed on the dye recording layer; and a cover layer disposed on the protective layer. The protective layer prevents direct contact between the dye recording layer and cover layer, thus assuring the medium quality.