Patents by Inventor Chun-Hao Chou

Chun-Hao Chou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190273104
    Abstract: The present disclosure is directed to a method for reducing the surface deformation of a color filter after a baking process in an image sensor device. Surface deformation can be reduced by increasing the surface area of the color filter prior to baking. For example, forming a grid structure over a semiconductor layer of an image sensor device, where the grid structure includes a first region with one or more cells having a common sidewall; disposing one or more color filters in a second region of the grid structure; recessing the common sidewall in the first region of the grid structure to form a group of cells with the recessed common sidewall; and disposing another color filter in the group of cells.
    Type: Application
    Filed: May 16, 2019
    Publication date: September 5, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Hsing CHU, Chun-Hao Chou, Kuo-Cheng Lee, Yin-Chieh Huang, Yun-Wei Cheng
  • Publication number: 20190252436
    Abstract: Structures and formation methods of a light sensing device are provided. The light sensing device includes a semiconductor substrate and a filter element over the semiconductor substrate. The light sensing device also includes a light sensing region below the filter element and a light shielding element over the semiconductor substrate and surrounding a lower portion of the filter element. The light sensing device further includes a dielectric element over the light shielding element and surrounding an upper portion of the filter element. A top width of the light shielding element and a bottom width of the dielectric element are different from each other.
    Type: Application
    Filed: April 22, 2019
    Publication date: August 15, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Wei CHENG, Yi-Hsing CHU, Yin-Chieh HUANG, Chun-Hao CHOU, Kuo-Cheng LEE, Hsun-Ying HUANG, Hsin-Chi CHEN
  • Publication number: 20190244988
    Abstract: Some embodiments relate to a device array including a plurality of devices arranged in a semiconductor substrate. A protection ring circumscribes an outer perimeter of the device array. The protection ring includes a first ring neighboring the device array, a second ring circumscribing the first ring and meeting the first ring at a first p-n junction, and a third ring circumscribing the second ring and meeting the second ring at a second p-n junction. The first ring has a first width, the second ring has a second width, and the third ring has a third width. At least two of the first width, the second width, and the third width are different from one another.
    Type: Application
    Filed: April 17, 2019
    Publication date: August 8, 2019
    Inventors: Tsung-Han Tsai, Chun-Hao Chou, Kuo-Cheng Lee, Yung-Lung Hsu, Yun-Wei Cheng
  • Publication number: 20190244660
    Abstract: Memories with symmetric read current profiles are provided. A memory includes a first memory array formed by a plurality of memory cells, a second memory array formed by a plurality of memory cells, and a read circuit. The read circuit includes an output buffer. The output buffer is configured to simultaneously obtain first data from the first memory array and second data from the second memory array according a first address signal, and selectively provide the first data or the second data as an output according to a control signal. Binary representation of the first data is complementary to that of the second data.
    Type: Application
    Filed: April 22, 2019
    Publication date: August 8, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yuhsiang CHEN, Shao-Yu CHOU, Chun-Hao CHANG, Min-Shin WU, Yu-Der CHIH
  • Patent number: 10367023
    Abstract: In some embodiments, the present disclosure relates to an image sensor integrated chip. The integrated chip has an image sensing element arranged within a pixel region of a substrate. A first dielectric is disposed in trenches within a first side of the substrate. The trenches are defined by first sidewalls disposed on opposing sides of the pixel region. An internal reflection enhancement structure is arranged along the first side of the substrate and is configured to reflect radiation exiting from the substrate back into the substrate.
    Type: Grant
    Filed: June 12, 2018
    Date of Patent: July 30, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Keng-Yu Chou, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Wei-Chieh Chiang, Cheng Yu Huang, Wen-Hau Wu, Chih-Kung Chang, Jhy-Jyi Sze
  • Patent number: 10367020
    Abstract: The present disclosure is directed to a method of forming a polarization grating structure (e.g., polarizer) as part of a grid structure of a back side illuminated image sensor device. For example, the method includes forming a layer stack over a semiconductor layer with radiation-sensing regions. Further, the method includes forming grating elements of one or more polarization grating structures within a grid structure, where forming the grating elements includes (i) etching the layer stack to form the grid structure and (ii) etching the layer stack to form grating elements oriented to a polarization angle.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: July 30, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee
  • Patent number: 10347675
    Abstract: An image sensor includes a color filter array and a light receiving element. The color filter array includes plural repeating unit cells, and at least one of the unit cells includes at least a yellow filter, at least one green filter, and at least one blue filter. The yellow filter is configured to transmit a green component and a red component of incident light. The green filter is configured to transmit the green component of the incident light. The blue filter is configured to transmit a blue component of the incident light. Each of the unit cells does not comprise a red filter configured to transmit the red component of the incident light. The light receiving element is configured to convert the incident light transmitted by the color filter array into electric signals.
    Type: Grant
    Filed: May 16, 2017
    Date of Patent: July 9, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Chieh Chiang, Keng-Yu Chou, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto
  • Publication number: 20190172870
    Abstract: An image sensor includes a semiconductor substrate, a gate dielectric layer over the semiconductor substrate, a gate electrode over the gate dielectric layer, and a protection oxide film in contact with a top surface of the gate electrode.
    Type: Application
    Filed: January 31, 2019
    Publication date: June 6, 2019
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Wei CHIA, Chun-Hao CHOU, Kai-Chun HSU, Kuo-Cheng LEE, Shyh-Fann TING
  • Publication number: 20190165029
    Abstract: The present disclosure relates to an image sensor with a pad structure formed during a front-end-of-line process. The pad structure can be formed prior to formation of back side deep trench isolation structures and metal grid structures. An opening is formed on a back side of the image sensor device to expose the embedded pad structure and to form electrical connections.
    Type: Application
    Filed: February 28, 2018
    Publication date: May 30, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee, Hsun-Ying Huang, Yin-Chieh Huang
  • Patent number: 10304885
    Abstract: The present disclosure is directed to a method for reducing the surface deformation of a color filter after a baking process in an image sensor device. Surface deformation can be reduced by increasing the surface area of the color filter prior to baking. For example, forming a grid structure over a semiconductor layer of an image sensor device, where the grid structure includes a first region with one or more cells having a common sidewall; disposing one or more color filters in a second region of the grid structure; recessing the common sidewall in the first region of the grid structure to form a group of cells with the recessed common sidewall; and disposing another color filter in the group of cells.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: May 28, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Hsing Chu, Chun-Hao Chou, Kuo-Cheng Lee, Yin-Chieh Huang, Yun-Wei Cheng
  • Publication number: 20190157320
    Abstract: A method for forming a high dielectric constant (high-?) dielectric layer on a substrate including performing a pre-clean process on a surface of the substrate. A chloride precursor is introduced on the surface. An oxidant is introduced to the surface to form the high-? dielectric layer on the substrate. A chlorine concentration of the high-? dielectric layer is lower than about 8 atoms/cm3.
    Type: Application
    Filed: January 7, 2019
    Publication date: May 23, 2019
    Inventors: Tsung-Han Tsai, Horng-Huei Tseng, Chun-Hao Chou, Kuo-Cheng Lee, Yung-Lung Hsu, Yun-Wei Cheng
  • Publication number: 20190148430
    Abstract: The present disclosure is directed to a method for reducing the surface deformation of a color filter after a baking process in an image sensor device. Surface deformation can be reduced by increasing the surface area of the color filter prior to baking. For example, forming a grid structure over a semiconductor layer of an image sensor device, where the grid structure includes a first region with one or more cells having a common sidewall; disposing one or more color filters in a second region of the grid structure; recessing the common sidewall in the first region of the grid structure to form a group of cells with the recessed common sidewall; and disposing another color filter in the group of cells.
    Type: Application
    Filed: April 27, 2018
    Publication date: May 16, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Hsing Chu, Chun-Hao Chou, Kuo-Cheng Lee, Yin-Chieh Huang, Yun-Wei Cheng
  • Publication number: 20190148431
    Abstract: The present disclosure is directed to a method for forming a light blocking material layer on a back side illuminated image sensor device. The light blocking material layer can block or absorb light rays incoming to the back side illuminated image sensor device at grazing incident angles. The light blocking material layer can be formed using a self-aligned process that does not require the use of a photolithography mask or photolithography operations. For example, the light blocking material layer can be formed over an image sensor device and subsequently etched so that the light blocking material layer remains in areas where light rays incoming at grazing incident angles enter the back side illuminated image sensor device.
    Type: Application
    Filed: April 30, 2018
    Publication date: May 16, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Wei CHENG, Chun-Hao Chou, Kuo-Cheng Lee
  • Publication number: 20190148437
    Abstract: The present disclosure is directed to a method of forming a polarization grating structure (e.g., polarizer) as part of a grid structure of a back side illuminated image sensor device. For example, the method includes forming a layer stack over a semiconductor layer with radiation-sensing regions. Further, the method includes forming grating elements of one or more polarization grating structures within a grid structure, where forming the grating elements includes (i) etching the layer stack to form the grid structure and (ii) etching the layer stack to form grating elements oriented to a polarization angle.
    Type: Application
    Filed: April 27, 2018
    Publication date: May 16, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Wei CHENG, Chun-Hao Chou, Kuo-Cheng Lee
  • Publication number: 20190148422
    Abstract: A semiconductor device is operated for sensing incident light and includes a carrier, a device layer, and a semiconductor layer. The device layer is disposed on the carrier. The semiconductor layer is disposed on the device layer. The semiconductor layer includes light-sensing regions. The semiconductor layer has a first surface and a second surface opposite to the first surface that is adjacent to the device layer. The second surface has a lattice plane which is tilted with respect to a basal plane, and the semiconductor layer has various pit portions arranged on the second surface.
    Type: Application
    Filed: January 25, 2018
    Publication date: May 16, 2019
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei CHENG, Chun-Hao CHOU, Kuo-Cheng LEE
  • Publication number: 20190140001
    Abstract: Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.
    Type: Application
    Filed: December 14, 2018
    Publication date: May 9, 2019
    Inventors: Chiu-Jung Chen, Chun-Hao Chou, Hsin-Chi Chen, Kuo-Cheng Lee, Volume Chien, Yung-Lung Hsu, Yun-Wei Cheng
  • Publication number: 20190139998
    Abstract: An optical isolation structure and a method for fabricating the same are provided. The optical isolation structure includes a first dielectric layer, a second dielectric layer, a third dielectric layer and a dielectric post. The first dielectric layer includes a trench portion located in a trench of the semiconductor substrate. The second dielectric layer includes a trench portion covering the trench portion of the first dielectric layer and located in the trench of the semiconductor substrate. The third dielectric layer includes a trench portion covering the trench portion of the second dielectric layer and located in the trench of the semiconductor substrate. The dielectric post is disposed in the trench of the semiconductor substrate and covering the trench portion of the third dielectric layer.
    Type: Application
    Filed: December 17, 2018
    Publication date: May 9, 2019
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei CHENG, Chun-Wei CHIA, Chun-Hao CHOU, Kuo-Cheng LEE, Hsun-Ying HUANG
  • Publication number: 20190140006
    Abstract: A method for forming an image sensor device is provided. The method includes forming a first trench in a semiconductor substrate. The semiconductor substrate has a front surface and a back surface, and the first trench extends from the front surface into the semiconductor substrate. The method includes forming a first isolation structure in the first trench. The method includes forming a light-sensing region in the semiconductor substrate. The first isolation structure surrounds the light-sensing region. The method includes forming a second trench in the semiconductor substrate. The second trench extends from the back surface into the semiconductor substrate and exposes the first isolation structure. The method includes forming a second isolation structure in the second trench. The second isolation structure includes a light-blocking structure to absorb or reflect incident light.
    Type: Application
    Filed: November 9, 2017
    Publication date: May 9, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Wei CHENG, Chun-Hao CHOU, Kuo-Cheng LEE, Hsun-Ying HUANG
  • Publication number: 20190132506
    Abstract: An image sensor including a semiconductor substrate, a plurality of color filters, a plurality of first lenses and a second lens is provided. The semiconductor substrate includes a plurality of sensing pixels arranged in array, and each of the plurality of sensing pixels respectively includes a plurality of image sensing units and a plurality of phase detection units. The color filters at least cover the plurality of image sensing units. The first lenses are disposed on the plurality of color filters. Each of the plurality of first lenses respectively covers one of the plurality of image sensing units. The second lens is disposed on the plurality of color filters and the second lens covers the plurality of phase detection units.
    Type: Application
    Filed: January 10, 2018
    Publication date: May 2, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Hsin-Chi Chen, Kuo-Cheng Lee, Hsun-Ying Huang
  • Patent number: D852151
    Type: Grant
    Filed: October 3, 2017
    Date of Patent: June 25, 2019
    Assignee: ZIPPY TECHNOLOGY CORP.
    Inventors: Chin-Wen Chou, Yung-Hsin Huang, Yu-Yuan Chang, Yung-Feng Chiu, Chun-Lung Su, Chih-Hao Chen