Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: A method for forming a semiconductor device is provided. The method includes forming a plurality of first channel nanostructures and a plurality of second channel nanostructures in an n-type device region and a p-type device region of a substrate, respectively, and sequentially depositing a gate dielectric layer, an n-type work function metal layer, and a cap layer surrounding each of the first and second channel nanostructures. The cap layer merges in first spaces between adjacent first channel nanostructures and merges in second spaces between adjacent second channel nanostructures. The method further includes selectively removing the cap layer and the n-type work function metal layer in the p-type device region, and depositing a p-type work function metal layer over the cap layer in the n-type device region and the gate dielectric layer in the p-type device region. The p-type work function metal layer merges in the second spaces.

Abstract: A test apparatus applicable to a server includes a processing unit, a control unit, a switch unit and a power relay unit. The processing unit outputs a reset signal and a processing signal. The control unit includes a first physical layer chip performing a first communication protocol, and a second physical layer chip performing a second communication protocol. The switch unit receives a working voltage and a processing signal to select a powering signal or a disconnection signal to output. The power relay unit receives the powering signal or the disconnection signal. When the power relay unit receives the powering signal, the server performs a test task on the first physical layer chip. When the power relay unit receives the disconnection signal and the processing unit outputs the reset signal to the control unit, the server performs the test task on the second physical layer chip.

Abstract: The present disclosure provides a testing apparatus for executing a test program, to perform a first test on a circuit component on a circuit board and a second test on the circuit board. The testing apparatus includes a first module, a second module, and a signal transmission line that connects the two. The first module includes a control unit, a signal generation unit, a signal processing unit, a signal expansion unit, and a power supply unit. The control unit generates a first control signal or a second control signal. The signal generation unit generates a current signal or a voltage signal. The signal processing unit generates a numerical signal. The signal expansion unit generates a second data signal. The power supply unit generates a working voltage. The second module includes a test address assignment unit that assigns an address and a signal isolation unit that performs noise immunization process.

Abstract: A test apparatus applicable to a server includes a processing unit, a control unit, a switch unit and a power relay unit. The processing unit outputs a reset signal and a processing signal. The control unit includes a first physical layer chip performing a first communication protocol, and a second physical layer chip performing a second communication protocol. The switch unit receives a working voltage and a processing signal to select a powering signal or a disconnection signal to output. The power relay unit receives the powering signal or the disconnection signal. When the power relay unit receives the powering signal, the server performs a test task on the first physical layer chip. When the power relay unit receives the disconnection signal and the processing unit outputs the reset signal to the control unit, the server performs the test task on the second physical layer chip.

Abstract: The present disclosure provides a testing apparatus for executing a test program, to perform a first test on a circuit component on a circuit board and a second test on the circuit board. The testing apparatus includes a first module, a second module, and a signal transmission line that connects the two. The first module includes a control unit, a signal generation unit, a signal processing unit, a signal expansion unit, and a power supply unit. The control unit generates a first control signal or a second control signal. The signal generation unit generates a current signal or a voltage signal. The signal processing unit generates a numerical signal. The signal expansion unit generates a second data signal. The power supply unit generates a working voltage. The second module includes a test address assignment unit that assigns an address and a signal isolation unit that performs noise immunization process.

Abstract: An interface conversion device, applicable to a storage device, includes a first connection port, a second connection port, a measuring unit and a processing unit. The first connection port transmits a first signal and a power signal via a first communication interface. The second connection port transmits a second signal and the power signal to the storage device via a second communication interface. The first communication interface and the second communication interface are different from each other. The measuring unit receives the power signal from the first connection port to measure the power signal and produce a measurement signal. The measuring unit outputs the power signal to the second connection port. The processing unit receives and converts the first signal into the second signal and outputs the second signal via the second connection port. The processing unit receives the measurement signal to calculate a power consumption value.

Abstract: The present invention provides an automatic electrostatic discharge (ESD) detection system connected to a plurality of current loops. For each of the current loops, the automatic ESD detection system can detect a plurality of electrical devices connected in sequence on the one current loop, and check if the electrical devices have abnormal ESD. The automatic ESD detection system includes a micro-controller, a plurality of circuit connection ports, a metrology unit, a circuit switching unit, a prompt unit, and two ground wires, wherein when one of the circuit connection ports is switched to be connected to the metrology unit, the one of the circuit connection ports remains electrically connected to one of the ground wires.

Abstract: A test board is provided. The test board includes a power connecting interface, diode modules, a power module a detecting module, and a processor. The power connecting interface includes power pins, wherein each of the power pins is electrically connected to a motherboard power socket to receive a power signal. Each of the diode modules is electrically connected to one of the power pins and includes at least one diode. The power module is electrically connected to the diode modules to receive the power signal through each of the diode modules. The detection module is electrically connected to points between the diode modules and the power connecting interface to generate a detection result according to the voltage between each diode module and the power connecting interface. The processor is used to determine the connecting state between the power pin and the corresponding motherboard power socket according to the detection result.

Abstract: A test board is provided. The test board includes a power connecting interface, diode modules, a power module a detecting module, and a processor. The power connecting interface includes power pins, wherein each of the power pins is electrically connected to a motherboard power socket to receive a power signal. Each of the diode modules is electrically connected to one of the power pins and includes at least one diode. The power module is electrically connected to the diode modules to receive the power signal through each of the diode modules. The detection module is electrically connected to points between the diode modules and the power connecting interface to generate a detection result according to the voltage between each diode module and the power connecting interface. The processor is used to determine the connecting state between the power pin and the corresponding motherboard power socket according to the detection result.

Abstract: A method for preventing contamination of a heater which is used for heating a wafer with a wafer bevel contains not directly heating the wafer bevel when using the heater to heat the wafer.

Abstract: A heater for heating a wafer is applied in a process chamber. The heater has an upper surface for positioning a wafer to heat the wafer, wherein a connection area of the upper surface and the wafer is less than the area of the wafer when the wafer is positioned on the upper surface of the heater.