Patents by Inventor Chun-Hao Kung
Chun-Hao Kung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11964358Abstract: A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.Type: GrantFiled: March 19, 2021Date of Patent: April 23, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shang-Yu Wang, Chun-Hao Kung, Ching-Hsiang Tsai, Kei-Wei Chen, Hui-Chi Huang
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Publication number: 20240087951Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.Type: ApplicationFiled: November 17, 2023Publication date: March 14, 2024Inventors: Chun-Hao Kung, Chih-Chieh Chang, Kao-Feng Liao, Hui-Chi Huang, Kei-Wei Chen
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Patent number: 11854827Abstract: A chemical-mechanical polishing (CMP) system includes a head, a polishing pad, and a magnetic system. The slurry used in the CMP process contains magnetizable abrasives. Application and control of a magnetic field, by the magnetic system, allows precise control over how the magnetizable abrasives in the slurry may be drawn toward the wafer or toward the polishing pad.Type: GrantFiled: June 30, 2021Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yen-Ting Chen, Chun-Hao Kung, Tung-Kai Chen, Hui-Chi Huang, Kei-Wei Chen
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Patent number: 11854872Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.Type: GrantFiled: July 20, 2022Date of Patent: December 26, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Hao Kung, Chih-Chieh Chang, Kao-Feng Liao, Hui-Chi Huang, Kei-Wei Chen
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Publication number: 20230219188Abstract: A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.Type: ApplicationFiled: February 24, 2023Publication date: July 13, 2023Inventors: Chun-Hao Kung, Shang-Yu Wang, Ching-Hsiang Tsai, Hui-Chi Huang, Kei-Wei Chen
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Publication number: 20230118617Abstract: Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.Type: ApplicationFiled: December 15, 2022Publication date: April 20, 2023Inventors: Chun-Hao Kung, Hui-Chi Huang, Kei-Wei Chen, Yen-Ting Chen
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Publication number: 20230078573Abstract: A planarization method includes: providing a substrate, wherein the substrate includes a first region and a second region having different degrees of hydrophobicity or hydrophilicity, the second region covering an upper surface of the first region; polishing the substrate with a polishing slurry until the upper surface of the first region is exposed; and continuing polishing and performing a surface treatment by the polishing slurry to adjust the degree of hydrophobicity or hydrophilicity of at least one of the first region and the second region. The polishing slurry and the upper surface of the second region have a first contact angle, and the polishing slurry and the upper surface of the first region have a second contact angle. The surface treatment keeps a contact angle difference between the first contact angle and the second contact angle being equal to or less than 30 degrees during the polishing.Type: ApplicationFiled: June 23, 2022Publication date: March 16, 2023Inventors: TUNG-KAI CHEN, CHING-HSIANG TSAI, KAO-FENG LIAO, CHIH-CHIEH CHANG, CHUN-HAO KUNG, FANG-I CHIH, HSIN-YING HO, CHIA-JUNG HSU, HUI-CHI HUANG, KEI-WEI CHEN
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Patent number: 11590627Abstract: A method of performing a chemical mechanical planarization (CMP) process includes holding a wafer by a retainer ring attached to a carrier, pressing the wafer against a first surface of a polishing pad, the polishing pad rotating at a first speed, dispensing a slurry on the first surface of the polishing pad, and generating vibrations at the polishing pad.Type: GrantFiled: July 18, 2019Date of Patent: February 28, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chun-Hao Kung, Shang-Yu Wang, Ching-Hsiang Tsai, Hui-Chi Huang, Kei-Wei Chen
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Patent number: 11551936Abstract: Provided herein are polishing pads in which microcapsules that include a polymer material and are dispersed, as well as methods of making and using the same. Such microcapsules are configured to break open (e.g., when the polishing pad is damaged during the dressing process), which releases the polymer material. When contacted with ultraviolet light the polymer material at least partially cures, healing the damage to the polishing pad. Such polishing pads have a longer lifetime and a more stable remove rate when compared to standard polishing pads.Type: GrantFiled: July 16, 2019Date of Patent: January 10, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Hao Kung, Hui-Chi Huang, Kei-Wei Chen, Yen-Ting Chen
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Publication number: 20220367257Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.Type: ApplicationFiled: July 20, 2022Publication date: November 17, 2022Inventors: Chun-Hao Kung, Chih-Chieh Chang, Kao-Feng Liao, Hui-Chi Huang, Kei-Wei Chen
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Patent number: 11417566Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.Type: GrantFiled: April 12, 2019Date of Patent: August 16, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chun-Hao Kung, Chih-Chieh Chang, Kao-Feng Liao, Hui-Chi Huang, Kei-Wei Chen
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Patent number: 11373879Abstract: A planarization method and a CMP method are provided. The planarization method includes providing a substrate with a first region and a second region having different degrees of hydrophobicity or hydrophilicity and performing a surface treatment to the first region to render the degrees of hydrophobicity or hydrophilicity in proximity to that of the second region. The CMP method includes providing a substrate with a first region and a second region; providing a polishing slurry on the substrate, wherein the polishing slurry and the surface of the first region have a first contact angle, and the polishing slurry and the surface of the first region have a second contact angle; modifying the surface of the first region to make a contact angle difference between the first contact angle and the second contact angle equal to or less than 30 degrees.Type: GrantFiled: September 12, 2020Date of Patent: June 28, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Tung-Kai Chen, Ching-Hsiang Tsai, Kao-Feng Liao, Chih-Chieh Chang, Chun-Hao Kung, Fang-I Chih, Hsin-Ying Ho, Chia-Jung Hsu, Hui-Chi Huang, Kei-Wei Chen
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Publication number: 20210327720Abstract: A chemical-mechanical polishing (CMP) system includes a head, a polishing pad, and a magnetic system. The slurry used in the CMP process contains magnetizable abrasives. Application and control of a magnetic field, by the magnetic system, allows precise control over how the magnetizable abrasives in the slurry may be drawn toward the wafer or toward the polishing pad.Type: ApplicationFiled: June 30, 2021Publication date: October 21, 2021Inventors: Yen-Ting Chen, Chun-Hao Kung, Tung-Kai Chen, Hui-Chi Huang, Kei-Wei Chen
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Patent number: 11145751Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a gate structure, a source/drain structure, a dielectric layer, a contact plug. The gate structure is positioned over a fin structure. The source/drain structure is positioned in the fin structure and adjacent to the gate structure. The dielectric layer is positioned over the gate structure and the source/drain structure. The contact plug is positioned passing through the dielectric layer. The contact plug includes a first metal compound including one of group III elements, group IV elements, group V elements or a combination thereof.Type: GrantFiled: March 29, 2018Date of Patent: October 12, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Kuo-Ju Chen, Su-Hao Liu, Chun-Hao Kung, Liang-Yin Chen, Huicheng Chang, Kei-Wei Chen, Hui-Chi Huang, Kao-Feng Liao, Chih-Hung Chen, Jie-Huang Huang, Lun-Kuang Tan, Wei-Ming You
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Publication number: 20210313190Abstract: Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio being determined based on an electro potential (Ev) value of a metal material of the substrate. The CMP process may be performed on the substrate based on the balanced concentration ratio of chelator additives to inhibitor additives of the CMP slurry.Type: ApplicationFiled: June 21, 2021Publication date: October 7, 2021Inventors: Chun-Hao Kung, Tung-Kai Chen, Chih-Chieh Chang, Kao-Feng Liao, Hui-Chi Huang, Kei-Wei Chen
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Publication number: 20210205950Abstract: A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.Type: ApplicationFiled: March 19, 2021Publication date: July 8, 2021Inventors: Shang-Yu Wang, Chun-Hao Kung, Ching-Hsiang Tsai, Kei-Wei Chen, Hui-Chi Huang
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Patent number: 11056352Abstract: A chemical-mechanical polishing (CMP) system includes a head, a polishing pad, and a magnetic system. The slurry used in the CMP process contains magnetizable abrasives. Application and control of a magnetic field, by the magnetic system, allows precise control over how the magnetizable abrasives in the slurry may be drawn toward the wafer or toward the polishing pad.Type: GrantFiled: December 3, 2018Date of Patent: July 6, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yen-Ting Chen, Chun-Hao Kung, Tung-Kai Chen, Hui-Chi Huang, Kei-Wei Chen
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Patent number: 11043396Abstract: Methods of manufacturing a chemical-mechanical polishing (CMP) slurry and methods of performing CMP process on a substrate comprising metal features are described herein. The CMP slurry may be manufactured using a balanced concentration ratio of chelator additives to inhibitor additives, the ratio being determined based on an electro potential (Ev) value of a metal material of the substrate. The CMP process may be performed on the substrate based on the balanced concentration ratio of chelator additives to inhibitor additives of the CMP slurry.Type: GrantFiled: November 2, 2018Date of Patent: June 22, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Hao Kung, Tung-Kai Chen, Chih-Chieh Chang, Kao-Feng Liao, Hui-Chi Huang, Kei-Wei Chen
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Patent number: 10953514Abstract: A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.Type: GrantFiled: September 17, 2019Date of Patent: March 23, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shang-Yu Wang, Chun-Hao Kung, Ching-Hsiang Tsai, Kei-Wei Chen, Hui-Chi Huang
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Publication number: 20210078130Abstract: A method includes placing a polisher head on platen, the polisher head including a set of first magnets, and controlling a set of second magnets to rotate the polisher head on the platen, wherein controlling the set of second magnets includes reversing the polarity of at least one second magnet of the set of second magnets to produce a magnetic force on at least one first magnet of the set of first magnets, wherein the set of second magnets are external to the polisher head.Type: ApplicationFiled: September 17, 2019Publication date: March 18, 2021Inventors: Shang-Yu Wang, Chun-Hao Kung, Ching-Hsiang Tsai, Kei-Wei Chen, Hui-Chi Huang