Abstract: A pixel unit comprising a first metal layer and a second metal layer. The first metal layer comprises a gate electrode and a first electrode. The second metal layer comprises a drain electrode, a source electrode, and a second electrode. The drain electrode overlaps the gate electrode in a first overlapping region. The source electrode overlaps the gate electrode in a second overlapping region. The second electrode overlaps the first electrode in a third overlapping region. The size of the first electrode approximates that of the second electrode. The first electrode and the second electrode are staggered.

Abstract: A mask including a transparent substrate, a semi-transparent layer and a film layer is provided. The transparent substrate at least has a first region, a second region and a third region. The semi-transparent layer covers the second region and the third region of the transparent substrate and exposes the first region. The film layer covers the halftone layer disposed at the third region, to make the transmittance of the third region lower than that of the second region. The halftone layer and the film can be made of phase shift layers, to form a phase shift mask. Besides, several fabrication methods of the mask are also disclosed to form the above-mentioned mask.

Abstract: A mask including a transparent substrate, a non-transmitting layer, a first transmitting layer and a second transmitting layer is provided. The transparent substrate has a first region, a second region, and a third region. The non-transmitting layer is disposed in the first region of the transparent substrate. The first transmitting layer is disposed in the second region and the third region of the transparent substrate. The second transmitting layer is disposed on the first transmitting layer in the third region.

Abstract: A pixel structure disposed on a substrate having a plurality of protrudent patterns is provided. An area where the protrudent patterns are disposed defines a first display area. The arrangement of the protrudent patterns forms a plurality of arc loci. The arc loci have a same arc center disposed at a corner of the first display area. The abovementioned protrudent patterns avails improvement of a displaying effect of the pixel structure.

Abstract: The invention provides a novel technology where a TFT array substrate for a display device is formed with three photomasks. The invention is achieved by using the novel technology in combination with a well-known four-masks process. For the novel technology, during the lithography process where a photosensitive acrylic resin film is used to make contacts, taper patterns required for general through holes are formed simultaneously with a fine pattern formed in a light shielding area that is tapered more approximately to vertical, using a photomask with phase-shift effect. Thus the pixel electrode pattern can be separated without using lithography process in subsequent processes.

Abstract: A method for manufacturing a substrate for a flat panel display device is disclosed. The present method uses photolithography with four masks to manufacture a TFT-LCD. After the third half-tone mask is used, the manufacturing of the TFTs and the defining of the pixel area of the substrate can be completed. The present method can avoid the alignment deviation and the generation of parasitic capacitance happened on the substrate made through the conventional photolithography with five masks. Therefore, the present method can reduce the costs and increase the yield. Moreover, the substrate for the TFT-LCD made by the present method can define a channel region in the semiconductor layer after the second half-tone mask. Hence, the subsequent manufacturing for forming a transparent conductive layer, a source, and a drain can be achieved by wet etching to effectively reduce the non-homogeneous etching for the channel region in the semiconductor layer.

Abstract: A method of fabricating a color filter layer is provided. First, an active device array substrate having an opaque metal pattern formed thereon is provided. Next, a back-side exposure process is performed on the active device array substrate using the opaque metal layer as a mask to form a black matrix defining a plurality of pixel regions. Next, a plurality of color filter patterns is formed in the pixel regions.

Abstract: Lift-off method and half-tone photolithography are used to fabricate LCD TFT array plate. Only two photo masks are used to respectively define a first and a second metal layers to accomplish the LCD TFT array plate.

Abstract: A method of manufacturing a pixel structure is provided. A gate, a scan line, and at least one first auxiliary pattern are formed on a substrate. A gate insulating layer is formed on the substrate to cover the gate and the scan line and expose the first auxiliary pattern and a part of the scan line. A channel layer is formed on the gate insulating layer over the gate. A source, a drain, a data line, a top electrode, and at least one second auxiliary pattern are formed, wherein the data line is electrically connected to the exposed first auxiliary pattern and the second auxiliary pattern is electrically connected to the exposed scan line. A passivation layer and a pixel electrode are formed, and the pixel electrode is electrically connected to the drain and the top electrode.

Abstract: A mask including a transparent substrate, a semi-transparent layer and a film layer is provided. The transparent substrate at least has a first region, a second region and a third region. The semi-transparent layer covers the second region and the third region of the transparent substrate and exposes the first region. The film layer covers the halftone layer disposed at the third region, to make the transmittance of the third region lower than that of the second region. The halftone layer and the film can be made of phase shift layers, to form a phase shift mask. Besides, several fabrication methods of the mask are also disclosed to form the above-mentioned mask.

Abstract: A pixel unit comprising a first metal layer and a second metal layer. The first metal layer comprises a gate electrode and a first electrode. The second metal layer comprises a drain electrode, a source electrode, and a second electrode. The drain electrode overlaps the gate electrode in a first overlapping region. The source electrode overlaps the gate electrode in a second overlapping region. The second electrode overlaps the first electrode in a third overlapping region. The size of the first electrode approximates that of the second electrode. The first electrode and the second electrode are staggered.

Abstract: A mask and a manufacturing method thereof are provided. A transparent substrate having three regions is provided first. A non-transmitting layer is formed in a first region of the transparent substrate. Then, a first photoresist layer is formed on the transparent substrate, and the first photoresist layer exposes a second region of the transparent substrate. Next, a first transmitting layer is formed on the transparent substrate and the first photoresist layer. Finally, the first photoresist layer is removed. The first transmitting layer on the first photoresist layer is removed at the same time and the first transmitting layer in the second region of the transparent substrate is remained and a third region of the transparent substrate is exposed. A lift-off process is used in the mask manufacturing method of the present invention to form the transmitting layer.

Abstract: The invention provides a novel technology where a TFT array substrate for a display device is formed with three photomasks. The invention is achieved by using the novel technology in combination with a well-known four-masks process. For the novel technology, during the lithography process where a photosensitive acrylic resin film is used to make contacts, taper patterns required for general through holes are formed simultaneously with a fine pattern formed in a light shielding area that is tapered more approximately to vertical, using a photomask with phase-shift effect. Thus the pixel electrode pattern can be separated without using lithography process in subsequent processes.