Abstract: A method for forming a metal-insulator-metal capacitor in a multilevel semiconductor device utilizes the copper interconnect levels of the semiconductor device as parts of the capacitor. A lower capacitor plate consists of a copper interconnect level and a first metal layer formed on the copper interconnect level by selective deposition methods. The upper capacitor plate includes the same pattern as the capacitor dielectric, the pattern having an area less than the area of the lower capacitor plate. The upper capacitor plate is formed of a second metal layer. The first and second metal layers may each be formed of cobalt, tungsten, nickel, molybdenum, or a combinations of one of the aforementioned elements with boron and/or phosphorus. Conductive vias provide contact from the upper capacitor plate and lower capacitor plate, to interconnect levels.

Abstract: The present invention provides a micro-projection lens including first lens group, a second lens group, and a third lens group arranged in sequence along an optical axis from a screen side to a light modulator side. The first lens group has positive refractive power and includes at least an aspheric lens. The second lens group has negative refractive power and includes at least a glass tablet. The third lens group has positive refractive power and includes at least an aspheric lens. Therefore, the micro-projection lens of the present invention has a small size and high optical performance.

Abstract: A scanner lens includes a first lens, a second lens, and a third lens. The first lens is provided with a first focal length. The first, second, and third lenses are sequentially arranged from an object end to an imaging end and are respectively provided with a plus diopter, a minus diopter, and a plus diopter. At least one of the first, second, and third lenses comprises an aspheric lens. The ratio of the first focal length to a system focal length of the scanner lens ranges between 1 and 2.

Abstract: A miniaturized lens assembly includes a first lens, a stop, a second lens, a third lens, a fourth lens and a fifth lens, all of which are arranged in sequence from an object side to an image side along an optical axis. The first lens is made of plastic material, is a meniscus lens with negative refractive power, and includes a convex surface facing the object side. The second lens is made of plastic material and is a biconvex lens with positive refractive power. The third lens is made of glass material and is a biconvex lens with positive refractive power. The fourth lens is made of glass material, is a biconcave lens with negative refractive power, and is adhered to the third lens to form a compound lens. The fifth lens is made of plastic material, is provided with positive refractive power, and includes an aspheric surface.

Abstract: A miniature image pickup lens includes a first lens, a second lens, a third lens, an aperture, a fourth lens, and a fifth lens in sequence along an optical axis from an object side to an image side. The first lens is a meniscus lens with negative refractive power and has a convex side facing the object side. The first lens has at least an aspheric side. The second lens is a biconvex lens with positive refractive power. The third lens is a biconcave lens with negative refractive power. The fourth lens is a biconvex lens with positive refractive power and has at least an aspheric side. The fifth lens has a negative refractive power.

Abstract: The present invention provides a micro-projection lens including first lens group, a second lens group, and a third lens group arranged in sequence along an optical axis from a screen side to a light modulator side. The first lens group has positive refractive power and includes at least an aspheric lens. The second lens group has negative refractive power and includes at least a glass tablet. The third lens group has positive refractive power and includes at least an aspheric lens. Therefore, the micro-projection lens of the present invention has a small size and high optical performance.

Abstract: An imaging lens includes an aperture stop, and plastic-made meniscus first and second lens elements arranged in the given order from an object side to an image side. Each of the first and second lens elements has an object-side surface and an imaging-side surface facing toward the object side and the image side, respectively. Each of the object-side surface of the first lens element and the imaging-side surface of the second lens element is a convex surface. At least one of the object-side and imaging-side surfaces of each of the first and second lens elements is an aspherical surface. The imaging lens satisfies the optical conditions of: 0.1<f1/EFL<2, and 0.1<R1/R2<2, wherein f1 is a focal length of the first lens element, EFL is an effective focal length of the imaging lens, and R1 and R2 are radii of curvature of the object-side and imaging-side surfaces of the first lens element, respectively.

Abstract: A micro prime lens system is provided. From an object side to an image side, the micro prime lens system sequentially includes a first lens, a second lens, a third lens and a fourth lens, which have a positive, a negative, a positive and a negative index of refraction, respectively. The third lens is an aspherical lens made of glass material and conforms to the following condition: 0.3<f3/f<1.5, wherein f3 represents a focal length of the third lens, and f represents a focal length of the micro prime lens system. The utilization of glass aspherical surfaces of the third lens effectively improves the aberration of the micro prime lens and successfully decreases the F number, and in other words to increase aperture diameter. Therefore, the luminous flux density is increased and the image resolution is raised.

Abstract: A mini fixed focus lens module is provided. From an object end to an image end thereof, the mini fixed focus lens module sequentially includes a first lens, a second lens, a third lens and a fourth lens. The first lens has a positive diopter, the second lens has a negative diopter, the third lens has a positive diopter, the fourth lens has a negative diopter, a combined diopter of the second and third lenses is positive, and the mini fixed focus lens module satisfies the following formula: 0.2<f23/f<1 , wherein f23 is a combined focal length of the second and third lenses, and f is a system focal length of the mini fixed focus lens module. The invention arranges the first, second, third and fourth lenses to control a ratio of the combined focal length to the system focal length.

Abstract: A scanner lens includes a first lens, a second lens, and a third lens. The first lens is provided with a first focal length. The first, second, and third lenses are sequentially arranged from an object end to an imaging end and are respectively provided with a plus diopter, a minus diopter, and a plus diopter. At least one of the first, second, and third lenses comprises an aspheric lens. The ratio of the first focal length to a system focal length of the scanner lens ranges between 1 and 2.

Abstract: A projector being operated at a working surface is provided. The projector includes a casing, a light source module and a transparent blocking member. The casing has a first surface and a second surface. The first surface is adjacent to the working surface and opposite to the second surface. The second surface has an opening. The light source module corresponding to the opening is disposed in the casing. The light source module can be assembled and disassembled through the opening. The transparent blocking member is disposed on the second surface and covers the opening.

Abstract: A method for forming a metal-insulator-metal capacitor in a multilevel semiconductor device utilizes the copper interconnect levels of the semiconductor device as parts of the capacitor. A lower capacitor plate consists of a copper interconnect level and a first metal layer formed on the copper interconnect level by selective deposition methods. The upper capacitor plate includes the same pattern as the capacitor dielectric, the pattern having an area less than the area of the lower capacitor plate. The upper capacitor plate is formed of a second metal layer. The first and second metal layers may each be formed of cobalt, tungsten, nickel, molybdenum, or a combinations of one of the aforementioned elements with boron and/or phosphorus. Conductive vias provide contact from the upper capacitor plate and lower capacitor plate, to interconnect levels.

Abstract: A metal-insulator-metal capacitor formed in a multilevel semiconductor device utilizes the copper interconnect levels of the semiconductor device as parts of the capacitor. A lower capacitor plate consists of a copper interconnect level and a first metal layer formed on the copper interconnect level by selective deposition methods. The upper capacitor plate includes the same pattern as the capacitor dielectric, the pattern having an area less than the area of the lower capacitor plate. The upper capacitor plate is formed of a second metal layer. The first and second metal layers may each be formed of cobalt, tungsten, nickel, molybdenum, or a combinations of one of the aforementioned elements with boron and/or phosphorus. Conductive vias provide contact from the upper capacitor plate and lower capacitor plate, to interconnect levels.

Abstract: A method of decoupling the formation of LDD and pocket regions is provided. The method includes providing a semiconductor chip including active regions, forming gate structures in the active regions, forming N-LDD regions on the semiconductor chip using an N-LDD mask, forming N-Pocket regions on the semiconductor chip using an N-Pocket mask, forming P-LDD regions on the semiconductor chip using a P-LDD mask, and forming P-Pocket regions on the semiconductor chip using a P-Pocket mask.

Abstract: A capacitor device selectively combines MOM, MIM and varactor regions in the same layout area of an IC. Two or more types of capacitor regions arranged vertically on a substrate to form the capacitor device. This increase the capacitance per unit of the capacitor device, without occupying an extra layout area.

Abstract: A method of decoupling the formation of LDD and pocket regions is provided. The method includes providing a semiconductor chip including active regions, forming gate structures in the active regions, forming N-LDD regions on the semiconductor chip using an N-LDD mask, forming N-Pocket regions on the semiconductor chip using an N-Pocket mask, forming P-LDD regions on the semiconductor chip using a P-LDD mask, and forming P-Pocket regions on the semiconductor chip using a P-Pocket mask.

Abstract: A compact lens system includes a first positive lens element (1) on the object side and a second negative lens element (2) on the image side. The first positive lens element is a meniscus lens having a convex surface (11) facing the object side. The second negative lens element is also a meniscus lens having a convex surface (12) facing the image side. Both of the first and second lens elements are aspheric lenses each having at least one aspheric surface. The first and second lens elements are made of different plastic materials and are symmetrically arranged with respect to each other along the optical axis.

Abstract: A metal-insulator-metal capacitor formed in a multilevel semiconductor device utilizes the copper interconnect levels of the semiconductor device as parts of the capacitor. A lower capacitor plate consists of a copper interconnect level and a first metal layer formed on the copper interconnect level by selective deposition methods. The upper capacitor plate includes the same pattern as the capacitor dielectric, the pattern having an area less than the area of the lower capacitor plate. The upper capacitor plate is formed of a second metal layer. The first and second metal layers may each be formed of cobalt, tungsten, nickel, molybdenum, or a combinations of one of the aforementioned elements with boron and/or phosphorus. Conductive vias provide contact from the upper capacitor plate and lower capacitor plate, to interconnect levels.

Abstract: A compact lens system includes a first positive lens element (1) on the object side and a second negative lens element (2) on the image side. The first positive lens element is a meniscus lens having a convex surface (11) facing the object side. The second negative lens element is also a meniscus lens having a convex surface (12) facing the image side. Both of the first and second lens elements are aspheric lenses each having at least one aspheric surface. The first and second lens elements are made of different plastic materials and are symmetrically arranged with respect to each other along the optical axis.

Abstract: A capacitor device selectively combines MOM, MIM and varactor regions in the same layout area of an IC. Two or more types of capacitor regions arranged vertically on a substrate to form the capacitor device. This increase the capacitance per unit of the capacitor device, without occupying an extra layout area.