Abstract: Semiconductor packages and methods for forming a semiconductor package are disclosed. The method includes providing a package substrate having first and second major surfaces. The package substrate includes a base substrate having a mold material and a plurality of interconnect structures including via contacts extending through the first to the second major surface of the package substrate. A die having conductive contacts on its first or second surface is provided. The conductive contacts of the die are electrically coupled to the interconnect structures. A cap is formed over the package substrate to encapsulate the die.

Abstract: Semiconductor packages and methods for forming a semiconductor package are disclosed. The method includes providing a package substrate having first and second major surfaces. The package substrate includes a base substrate having a mold material and a plurality of interconnect structures including via contacts extending through the first to the second major surface of the package substrate. A die having conductive contacts on its first or second surface is provided. The conductive contacts of the die are electrically coupled to the interconnect structures. A cap is formed over the package substrate to encapsulate the die.

Abstract: Devices and methods for forming a device are disclosed. The device includes a contact region disposed over a last interconnect level of the device. The device includes a final passivation layer having at least an opening which at least partially exposes a top surface of the contact region and a buffer layer disposed at least over a first exposed portion of the top surface of the contact region. When an electrically conductive interconnection couples to the contact region, the buffer layer absorbs a portion of a force exerted to form an interconnection between the electrically conductive interconnection and the contact region.

Abstract: Semiconductor packages and methods for forming a semiconductor package are disclosed. The method includes providing a package substrate having first and second major surfaces. The package substrate includes a base substrate having a mold material and a plurality of interconnect structures including via contacts extending through the first to the second major surface of the package substrate. A die having conductive contacts on its first or second surface is provided. The conductive contacts of the die are electrically coupled to the interconnect structures. A cap is formed over the package substrate to encapsulate the die.

Abstract: Semiconductor packages and methods for forming a semiconductor package are disclosed. The method includes providing a package substrate having first and second major surfaces. The package substrate includes a base substrate having a mold material and a plurality of interconnect structures including via contacts extending through the first to the second major surface of the package substrate. A die having conductive contacts on its first or second surface is provided. The conductive contacts of the die are electrically coupled to the interconnect structures. A cap is formed over the package substrate to encapsulate the die.

Abstract: Devices and methods for forming a device are disclosed. The device includes a contact region disposed over a last interconnect level of the device. The device includes a final passivation layer having at least an opening which at least partially exposes a top surface of the contact region and a buffer layer disposed at least over a first exposed portion of the top surface of the contact region. When an electrically conductive interconnection couples to the contact region, the buffer layer absorbs a portion of a force exerted to form an interconnection between the electrically conductive interconnection and the contact region.

Abstract: Semiconductor packages and methods for forming a semiconductor package are presented. The method includes providing a package substrate having first and second major surfaces. The package substrate dudes at least one substrate layer having at least one cavity. Interconnect structure is formed. At least one conductive stud is formed within the cavity and a conductive trace and a connection pad are formed over the first major surface of the package substrate and are coupled to top surface of the conductive stud. A package pad is formed and is directly coupled to the conductive stud. A die having conductive contacts on its first or second surface is provided. The conductive contacts of the die are electrically coupled to the interconnect structure. A cap is formed over the package substrate to encapsulate the die.

Abstract: Semiconductor packages and methods for forming a semiconductor package are disclosed. The method includes providing a package substrate having first and second major surfaces. The package substrate includes a base substrate having a mold material and a plurality of interconnect structures including via contacts extending through the first to the second major surface of the package substrate. A die having conductive contacts on its first or second surface is provided. The conductive contacts of the die are electrically coupled to the interconnect structures. A cap is formed over the package substrate to encapsulate the die.

Abstract: Semiconductor packages and methods for forming a semiconductor package are presented. The method includes providing a package substrate having first and second major surfaces. The package substrate includes at least one substrate layer having at least one cavity. Interconnect structure is formed. At least one conductive stud is formed within the cavity and a conductive trace and a connection pad are formed over the first major surface of the package substrate and are coupled to top surface of the conductive stud. A package pad is formed and is directly coupled to the conductive stud. A die having conductive contacts on its first or second surface is provided. The conductive contacts of the die are electrically coupled to the interconnect structure. A cap is formed over the package substrate to encapsulate the die.

Abstract: Semiconductor packages and methods for forming a semiconductor package are disclosed. The method includes providing a package substrate having first and second major surfaces. The package substrate includes a base substrate having a mold material and a plurality of interconnect structures including via contacts extending through the first to the second major surface of the package substrate. A die having conductive contacts on its first or second surface is provided. The conductive contacts of the die are electrically coupled to the interconnect structures. A cap is formed over the package substrate to encapsulate the die.

Abstract: Semiconductor packages and methods for forming a semiconductor package are presented. The method includes providing a package substrate having first and second major surfaces. The package substrate includes at least one substrate layer having at least one cavity. Interconnect structure is formed. At least one conductive stud is formed within the cavity and a conductive trace and a connection pad are formed over the first major surface of the package substrate and are coupled to top surface of the conductive stud. A package pad is formed and is directly coupled to the conductive stud. A die having conductive contacts on its first or second surface is provided. The conductive contacts of the die are electrically coupled to the interconnect structure. A cap is formed over the package substrate to encapsulate the die.

Abstract: Semiconductor packages and methods for forming a semiconductor package are disclosed. The method includes providing a package substrate having first and second major surfaces. The package substrate includes a base substrate having a mold material and a plurality of interconnect structures including via contacts extending through the first to the second major surface of the package substrate. A die having conductive contacts on its first or second surface is provided. The conductive contacts of the die are electrically coupled to the interconnect structures. A cap is formed over the package substrate to encapsulate the die.