Abstract: A photo resist layer is used to protect a dielectric layer and conductive elements embedded in the dielectric layer when patterning an etch stop layer underlying the dielectric layer. The photo resist layer may further be used to etch another dielectric layer underlying the etch stop layer, where etching the next dielectric layer exposes a contact, such as a gate contact. The bottom layer can be used to protect the conductive elements embedded in the dielectric layer from a wet etchant used to etch the etch stop layer.

Abstract: The present application relates to a system and a method for producing vinyl chloride. The system comprise a preheat unit, a gas-liquid separating unit, a heat-recovery unit, a heating unit and a thermal pyrolysis unit, and therefore heat energy of the thermal pyrolysis product can be efficiently recovered. Energy cost of the system can be efficiently lowered with the heat-recovery unit and the heating unit, and further prolonging operating cycle of the system.

Abstract: A method includes forming isolation regions extending into a semiconductor substrate. A semiconductor strip is between the isolation regions. The method further includes recessing the isolation regions so that a top portion of the semiconductor strip protrudes higher than top surfaces of the isolation regions to form a semiconductor fin, measuring a fin width of the semiconductor fin, generating an etch recipe based on the fin width, and performing a thinning process on the semiconductor fin using the etching recipe.

Abstract: An apparatus and a method for forming a semiconductor structure are provided. The apparatus includes a polishing pad, a polishing head and a temperature control module. The polishing head mounts a substrate against the polishing pad. The temperature control module faces the polishing pad. The temperature control module includes a first temperature controller and a second temperature controller. The first temperature controller is configured to control a first temperature of a first zone of the polishing pad. The second temperature controller is configured to control a second temperature of a second zone of the polishing pad.

Abstract: The present disclosure describes an apparatus and a method to detect a polishing pad profile during a polish process and adjust the polishing process based on the detected profile. The apparatus can include a polishing pad configured to polishing a substrate, a substrate carrier configured to hold the substrate against the polishing pad, and a detection module configured to detect a profile of the polishing pad. The detection module can include a probe configured to measure a thickness of one or more areas on the polishing pad, and a beam configured to support the probe, where the probe can be further configured to move along the beam.

Abstract: An apparatus for performing a polishing process includes: a rotatable polishing pad; a temperature sensor configured to monitor a temperature on a top surface of the rotatable polishing pad; a first dispenser configured to dispense a first slurry that is maintained at a first temperature on the rotatable polishing pad; and a second dispenser configured to dispense a second slurry that is maintained at a second temperature on the rotatable polishing pad, wherein the second temperature is different from the first temperature so as to maintain the temperature on the top surface of the rotatable polishing pad at a substantially constant value.

Abstract: A voltage monitoring system includes a voltage dividing circuit and a voltage monitoring device. The voltage dividing circuit is configured to divide a power signal to generate an input voltage. The voltage monitoring device includes an input node, a shunt circuit, a first detection circuit and a second detection circuit. The input node receives the input voltage. The shunt circuit is configured to compare the input voltage with a voltage threshold value to selectively operate in a conducted state or a switched-off state, and configured to output a flag signal to indicate the conducted state or the switched-off state of the shunt circuit. The first detection circuit generates a first detection signal corresponding to the input voltage. The second detection circuit generates a second detection signal corresponding to the power signal according to the flag signal and the first detection signal.

Abstract: An apparatus for performing a polishing process includes: a rotatable polishing pad; a temperature sensor configured to monitor a temperature on a top surface of the rotatable polishing pad; a first dispenser configured to dispense a first slurry that is maintained at a first temperature on the rotatable polishing pad; and a second dispenser configured to dispense a second slurry that is maintained at a second temperature on the rotatable polishing pad, wherein the second temperature is different from the first temperature so as to maintain the temperature on the top surface of the rotatable polishing pad at a substantially constant value.

Abstract: A substrate may be loaded onto a chemical mechanical polishing (CMP) apparatus, which includes a polishing pad and a wafer carrier that holds the substrate. The wafer carrier includes a backside plate, a wafer carrier frame, and at least one optical vertical displacement measurement unit that includes a respective laser source and a respective pixelated image sensor. A total reflection geometry is used to reflect a laser beam off a top surface of the backside plate. A polish rate or a polish thickness of a polished portion of the substrate may be measured at each location underneath at least one reflection point during the CMP process.

Abstract: An apparatus for performing a polishing process includes: a rotatable polishing pad; a temperature sensor configured to monitor a temperature on a top surface of the rotatable polishing pad; a first dispenser configured to dispense a first slurry that is maintained at a first temperature on the rotatable polishing pad; and a second dispenser configured to dispense a second slurry that is maintained at a second temperature on the rotatable polishing pad, wherein the second temperature is different from the first temperature so as to maintain the temperature on the top surface of the rotatable polishing pad at a substantially constant value.

Abstract: An apparatus for performing a polishing process includes: a rotatable polishing pad; a temperature sensor configured to monitor a temperature on a top surface of the rotatable polishing pad; a first dispenser configured to dispense a first slurry that is maintained at a first temperature on the rotatable polishing pad; and a second dispenser configured to dispense a second slurry that is maintained at a second temperature on the rotatable polishing pad, wherein the second temperature is different from the first temperature so as to maintain the temperature on the top surface of the rotatable polishing pad at a substantially constant value.

Abstract: The present disclosure describes a chemical mechanical planarization system that includes a pad on a rotating platen, a wafer carrier configured to hold the wafer surface against the pad and apply pressure to the wafer, a slurry dispenser configured to dispense slurry on the pad, and a conditioning wheel configured to condition the pad. The conditioning wheel further includes a base and one or more flexible structures attached to the base with each flexible structure having an elastic body configured to exert a downforce on a feature of the pad, where the downforce is proportional to the height of the feature.

Abstract: The present disclosure describes a method and apparatus to adjust a wafer's polishing rate based on the temperature of the air received by the air chambers of a polishing head. The method includes supplying pressurized air to a temperature module coupled to a polishing head. The temperature module adjusts a temperature of the pressurized air that is supplied to the polishing head. The method further includes supplying the one or more air chambers of the polishing head with the temperature controlled pressurized air from the temperature module and polishing the wafer by rotating the wafer against a polishing pad.

Abstract: A conditioning device for conditioning a polishing pad used in chemical mechanical polishing includes a base having an opening and a conditioning disk removably attached to the base. The conditioning disk includes a conditioning portion disposed on a first surface of the base and a fitting portion removably fitted into or through the opening of the base. The fitting portion is fitted through or into the opening to base to prevent dislodging of the conditioning disk from the base during a process of conditioning a polishing pad for the chemical mechanical polishing process.

Abstract: The present disclosure describes an apparatus and a method to detect a polishing pad profile during a polish process and adjust the polishing process based on the detected profile. The apparatus can include a polishing pad configured to polishing a substrate, a substrate carrier configured to hold the substrate against the polishing pad, and a detection module configured to detect a profile of the polishing pad. The detection module can include a probe configured to measure a thickness of one or more areas on the polishing pad, and a beam configured to support the probe, where the probe can be further configured to move along the beam.

Abstract: The present disclosure describes a method and apparatus to adjust a wafer's polishing rate based on the temperature of the air received by the air chambers of a polishing head. The method includes supplying pressurized air to a temperature module coupled to a polishing head. The temperature module adjusts a temperature of the pressurized air that is supplied to the polishing head. The method further includes supplying the one or more air chambers of the polishing head with the temperature controlled pressurized air from the temperature module and polishing the wafer by rotating the wafer against a polishing pad.

Abstract: The present disclosure describes a chemical mechanical planarization system that includes a pad on a rotating platen, a wafer carrier configured to hold the wafer surface against the pad and apply pressure to the wafer, a slurry dispenser configured to dispense slurry on the pad, and a conditioning wheel configured to condition the pad. The conditioning wheel further includes a base and one or more flexible structures attached to the base with each flexible structure having an elastic body configured to exert a downforce on a feature of the pad, where the downforce is proportional to the height of the feature.

Abstract: An apparatus for performing a polishing process includes: a rotatable polishing pad; a temperature sensor configured to monitor a temperature on a top surface of the rotatable polishing pad; a first dispenser configured to dispense a first slurry that is maintained at a first temperature on the rotatable polishing pad; and a second dispenser configured to dispense a second slurry that is maintained at a second temperature on the rotatable polishing pad, wherein the second temperature is different from the first temperature so as to maintain the temperature on the top surface of the rotatable polishing pad at a substantially constant value.