Abstract: A self-aligned LDD TFT and a fabrication method thereof. A substrate is provided, on which a semiconductor layer is formed. A first masking layer is provided over a first region of the portion of the semiconductor layer. The first masking layer comprises a material that provides a permeable barrier to a dopant. The semiconductor layer including the first region covered by the first masking layer is exposed to the dopant, wherein the first region covered by the first masking layer is lightly doped with the dopant in comparison to a second region not covered by the first masking region.

Abstract: A method of transferring a thin film device onto a plastic sheet. A silver-containing buffer layer is formed on a glass substrate. A transferred layer including a thin film device is formed on part of the silver-containing buffer layer. At least one first hole penetrates the transferred layer and an edge of the silver-containing buffer layer is exposed. A first plastic layer including at least one second hole is adhered to the transferred layer with a removable glue, wherein the second hole corresponds to the first hole, and part of the first plastic layer is located above the edge of the silver-containing buffer layer. The silver-containing buffer layer is oxidized to expand, thereby separating the silver-containing buffer layer from the transferred layer. A second plastic layer is adhered to the transferred layer. The removable glue is eliminated to remove the first plastic layer.