Patents by Inventor Chun-Hsien CHANG
Chun-Hsien CHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11978511Abstract: A phase-change memory (PCM) cell is provided to include a first electrode, a second electrode, and a phase-change feature disposed between the first electrode and the second electrode. The phase-change feature is configured to change its data state based on a write operation performed on the PCM cell. The write operation includes a reset stage and a set stage. In the reset stage, a plurality of reset current pulses are applied to the PCM cell, and the reset current pulses have increasing current amplitudes. In the set stage, a plurality of set current pulses are applied to the PCM cell, and the set current pulses exhibit an increasing trend in current amplitude. The current amplitudes of the set current pulses are smaller than those of the reset current pulses.Type: GrantFiled: January 21, 2022Date of Patent: May 7, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yung-Huei Lee, Chun-Wei Chang, Jian-Hong Lin, Wen-Hsien Kuo, Pei-Chun Liao, Chih-Hung Nien
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Publication number: 20240144862Abstract: An electronic device with a first region and a second region located around the first region is disclosed. The electronic device includes a first gate driver and a second gate driver disposed in the second region, and a first transistor and a second transistor disposed in the first region. The first gate driver is used for outputting a first signal. The second gate driver is used for outputting a second signal. The first transistor is used for receiving the first signal from the first gate driver. The second transistor is used for receiving the second signal from the second gate driver. In a top view of the electronic device, the first region has a first side and a second side opposite to the first side, and the first gate driver and the second gate driver are located more adjacent to the first side and away from the second side.Type: ApplicationFiled: January 3, 2024Publication date: May 2, 2024Applicant: InnoLux CorporationInventors: Chun-Hsien LIN, Jui-Feng KO, Geng-Fu CHANG
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Publication number: 20240134470Abstract: An electronic device includes a first insulating layer, a first conductive portion, a second conductive portion, a transistor, and an electronic unit. The first insulating layer has a first opening penetrating the first insulating layer along a first direction. The first conductive portion is disposed in the first opening. The second conductive portion is electrically connected to the first conductive portion. The transistor is electrically connected to the second conductive portion. The electronic unit is electrically connected to the first conductive portion. In a cross-sectional view of the electronic device, the electronic unit and the second conductive portion are disposed on two opposite sides of the first insulating layer respectively, the first conductive portion has a first length along a second direction perpendicular to the first direction, the second conductive portion has a second length along the second direction, and the first length is different from the second length.Type: ApplicationFiled: January 4, 2024Publication date: April 25, 2024Applicant: InnoLux CorporationInventors: Po-Yang Chen, Hsing-Yuan Hsu, Tzu-Min Yan, Chun-Hsien Lin, Kuei-Sheng Chang
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Publication number: 20240088182Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.Type: ApplicationFiled: November 21, 2023Publication date: March 14, 2024Inventors: Cheng Yu Huang, Chun-Hao Chuang, Chien-Hsien Tseng, Kazuaki Hashimoto, Keng-Yu Chou, Wei-Chieh Chiang, Wen-Chien Yu, Ting-Cheng Chang, Wen-Hau Wu, Chih-Kung Chang
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Patent number: 11929314Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.Type: GrantFiled: March 12, 2021Date of Patent: March 12, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Hsien Huang, Peng-Fu Hsu, Yu-Syuan Cai, Min-Hsiu Hung, Chen-Yuan Kao, Ken-Yu Chang, Chun-I Tsai, Chia-Han Lai, Chih-Wei Chang, Ming-Hsing Tsai
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Patent number: 11914804Abstract: A touch display device is provided in this disclosure. The touch display device includes a substrate, a first conductive layer, a second conductive layer, a stacked structure, an inorganic light emitting unit, and a touch sensing circuit. The first conductive layer is disposed on the substrate. The first conductive layer includes a gate electrode. The second conductive layer is disposed on the first conductive layer. The second conductive layer includes a source electrode and a drain electrode. The stacked structure is disposed on the substrate. The stacked structure includes a conductive channel and a sensing electrode. The inorganic light emitting unit is disposed on the stacked structure. The inorganic light emitting unit is electrically connected with the drain electrode via the conductive channel. The touch sensing circuit is electrically connected with the sensing electrode.Type: GrantFiled: March 10, 2022Date of Patent: February 27, 2024Assignee: InnoLux CorporationInventors: Po-Yang Chen, Hsing-Yuan Hsu, Tzu-Min Yan, Chun-Hsien Lin, Kuei-Sheng Chang
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Patent number: 10693039Abstract: A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.Type: GrantFiled: May 23, 2017Date of Patent: June 23, 2020Assignee: Epistar CorporationInventors: Wen-Luh Liao, Shao-Ping Lu, Hung-Ta Cheng, Shih-I Chen, Chia-Liang Hsu, Shou-Chin Wei, Ching-Pei Lin, Yu-Ren Peng, Chien-Fu Huang, Wei-Yu Chen, Chun-Hsien Chang
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Patent number: 10038128Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.Type: GrantFiled: September 12, 2017Date of Patent: July 31, 2018Assignee: EPISTAR CORPORATIONInventors: Chien-Fu Huang, Yao-Ning Chan, Tzu Chieh Hsu, Yi-ming Chen, Hsin-Chih Chiu, Chih-Chiang Lu, Chia-liang Hsu, Chun-Hsien Chang
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Publication number: 20180006206Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.Type: ApplicationFiled: September 12, 2017Publication date: January 4, 2018Inventors: Chien-Fu HUANG, Yao-Ning CHAN, Tzu Chieh HSU, Yi-ming CHEN, Hsin-Chih CHIU, Chih-Chiang LU, Chia-liang HSU, Chun-Hsien CHANG
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Patent number: 9793458Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 ?m; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.Type: GrantFiled: February 21, 2017Date of Patent: October 17, 2017Assignee: EPISTAR CORPORATIONInventors: Chien-Fu Huang, Yao-Ning Chan, Tzu Chieh Hsu, Yi Ming Chen, Hsin-Chih Chiu, Chih-Chiang Lu, Chia-Liang Hsu, Chun-Hsien Chang
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Publication number: 20170256678Abstract: A light-emitting device comprises a light-emitting stack; a reflective structure comprising a reflective layer on the light-emitting stack and a first insulating layer covering the reflective layer; and a first conductive layer on the reflective structure; wherein the first insulating layer isolates the reflective layer from the first conductive layer.Type: ApplicationFiled: May 23, 2017Publication date: September 7, 2017Inventors: Wen-Luh LIAO, Shao-Ping LU, Hung-Ta CHENG, Shih-I CHEN, Chia-Liang HSU, Shou-Chin WEI, Ching-Pei LIN, Yu-Ren PENG, Chien-Fu HUANG, Wei-Yu CHEN, Chun-Hsien CHANG
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Patent number: 9685588Abstract: An optoelectronic element comprises a semiconductor stack comprising an active layer, wherein the semiconductor stack has a first surface and a second surface opposite to the first surface; a first transparent layer on the second surface; a plurality of cavities in the first transparent layer; and a layer on the first transparent layer, wherein the first transparent layer comprises oxide or diamond-like carbon.Type: GrantFiled: March 29, 2016Date of Patent: June 20, 2017Assignee: Epistar CorporationInventors: Wen-Luh Liao, Shao-Ping Lu, Hung-Ta Cheng, Shih-I Chen, Chia-Liang Hsu, Shou-Chin Wei, Ching-Pei Lin, Yu-Ren Peng, Chien-Fu Huang, Wei-Yu Chen, Chun-Hsien Chang
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Publication number: 20170170375Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 ?m; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.Type: ApplicationFiled: February 21, 2017Publication date: June 15, 2017Inventors: Chien-Fu HUANG, Yao-Ning CHAN, Tzu Chieh HSU, Yi Ming CHEN, Hsin-Chih CHIU, Chih-Chiang LU, Chia-Liang HSU, Chun-Hsien CHANG
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Patent number: 9614127Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 ?m; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.Type: GrantFiled: July 5, 2013Date of Patent: April 4, 2017Assignee: EPISTAR CORPORATIONInventors: Chien-Fu Huang, Yao-Ning Chan, Tzu Chieh Hsu, Yi Ming Chen, Hsin-Chih Chiu, Chih-Chiang Lu, Chia-Liang Hsu, Chun-Hsien Chang
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Publication number: 20160218247Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 ?m; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.Type: ApplicationFiled: July 5, 2013Publication date: July 28, 2016Inventors: Chien-Fu HUANG, Yao-Ning CHAN, Tzu Chieh HSU, Yi Ming CHEN, Hsin-Chih CHIU, Chih-Chiang LU, Chia-Liang HSU, Chun-Hsien CHANG
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Publication number: 20160211414Abstract: An optoelectronic element comprises a semiconductor stack comprising an active layer, wherein the semiconductor stack has a first surface and a second surface opposite to the first surface; a first transparent layer on the second surface; a plurality of cavities in the first transparent layer; and a layer on the first transparent layer, wherein the first transparent layer comprises oxide or diamond-like carbon.Type: ApplicationFiled: March 29, 2016Publication date: July 21, 2016Inventors: Wen-Luh LIAO, Shao-Ping LU, Hung-Ta CHENG, Shih-I CHEN, Chia-Liang HSU, Shou-Chin WEI, Ching-Pei LIN, Yu-Ren PENG, Chien-Fu HUANG, Wei-Yu CHEN, Chun-Hsien CHANG
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Patent number: 9331247Abstract: A light-emitting element includes a reflective layer; a first transparent layer on the reflective layer; a light-emitting stack having an active layer on the first transparent layer; and a cavity formed in the first transparent layer.Type: GrantFiled: May 23, 2014Date of Patent: May 3, 2016Assignee: Epistar CorporationInventors: Wen-Luh Liao, Shao-Ping Lu, Hung-Ta Chen, Shih-I Chen, Chia-Liang Hsu, Shou-Chin Wei, Ching-Pei Lin, Yu-Ren Peng, Chien-Fu Huang, Wei-Yu Chen, Chun-Hsien Chang
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Publication number: 20140346544Abstract: A light-emitting element includes a reflective layer; a first transparent layer on the reflective layer; a light-emitting stack having an active layer on the first transparent layer; and a cavity formed in the first transparent layer.Type: ApplicationFiled: May 23, 2014Publication date: November 27, 2014Applicant: EPISTAR CORPORATIONInventors: Wen-Luh LIAO, Shao-Ping LU, Hung-Ta CHEN, Shih-I CHEN, Chia-Liang HSU, Shou-Chin WEI, Ching-Pei LIN, Yu-Ren PENG, Chien-Fu HUANG, Wei-Yu CHEN, Chun-Hsien CHANG
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Publication number: 20120051950Abstract: An engine oil pump includes an oil supply mechanism and an adjustment mechanism. The oil supply mechanism includes an oil inlet, an oil outlet, an oil passage with two ends communicating with the oil inlet and oil outlet, and a driving gear and a driven gear located in the oil passage. The driving gear and driven gear are engaged at a selected depth to determine oil supply amount passing through the oil passage. The adjustment mechanism includes a housing and an actuation piston fastened to the driven gear. The housing has an engine oil duct on the periphery including one end communicating with the oil outlet and introducing engine oil from the oil outlet to one side of the actuation piston for storing. The actuation piston is pushed by pressure of the engine oil to drive the driven gear to move, and the oil supply amount is also changed.Type: ApplicationFiled: August 27, 2010Publication date: March 1, 2012Inventor: Chun-Hsien CHANG