Abstract: A method of manufacturing a semiconductor device includes depositing a photoresist material over a substrate. The substrate is rotated to spread the photoresist material. A gas is blown to an edge of the substrate when rotating the substrate. The rotating of the substrate is stopped. The blowing of the gas is stopped.

Abstract: In a method of manufacturing a semiconductor device, underlying structures comprising gate electrodes and source/drain epitaxial layers are formed, one or more layers are formed over the underlying structures, a hard mask layer is formed over the one or more layers, one or more first resist layers are formed over the hard mask layer, a first photo resist pattern is formed over the one or more first resist layers, a width of the first photo resist pattern is adjusted, the one or more first resist layers are patterned by using the first photo resist pattern as an etching mask, thereby forming a first hard mask pattern, and the hard mask layer is patterned by using the first hard mask pattern, thereby forming a second hard mask pattern.

Abstract: An illumination system including two light source modules, two light guiding modules, a first reflector, and a light homogenization element is provided. The two light guiding modules are respectively disposed on transmission paths of light beams generated by the two light source modules to generate two guiding light beams. One of the guiding light beams is reflected to the light homogenization element by the first reflector. The other of the guiding light beams is directly transmitted to the light homogenization element. The guiding light beams are emitted from the light homogenization element and form an illumination light beam. A projection apparatus is also provided.

Abstract: A projection apparatus including a light source module, an eccentric-collimating lens, a prism lens group, a light valve and a projection lens is provided. The light source module is configured to provide an illumination light beam. The eccentric-collimating lens is disposed between the light sources and the light valve on a transmission path of the illumination light beam. The light valve is configured to convert the illumination light beam into an image light beam. The projection lens is configured to project the image light beam out of the projection apparatus. A first included angle between a first transmission direction of the illumination light beam incident on the eccentric-collimating lens and a central axis of the eccentric-collimating lens is greater than 0. The first transmission direction and a second transmission direction of the image beam exiting from the light valve are perpendicular to each other.

Abstract: An thin film alloy based on chemical elements with high glass forming ability is disclosed. The alloy is deposited as a thin film from a source of substantially the same chemical composition. Within the deposited thin film, amorphization is induced extensively up to decades of micrometers in size during controlled annealing. Such controllable extensive amorphization throughout the thin film is useful to regulate the proportion of amorphous phase to crystalline phase, establish the structure/property relationships and thus tailor specific properties.

Abstract: An thin film alloy based on chemical elements with high glass forming ability is disclosed. The alloy is deposited as a thin film from a source of substantially the same chemical composition. Within the deposited thin film, amorphization is induced extensively up to decades of micrometers in size during controlled annealing. Such controllable extensive amorphization throughout the thin film is useful to regulate the proportion of amorphous phase to crystalline phase, establish the structure/property relationships and thus tailor specific properties.