Abstract: A deposition method comprises steps as follows. An apparatus for performing a thin-film deposition process is firstly provided, and the apparatus comprises a cabinet, a substrate carrier and a deposition source. The substrate carrier is disposed in the cabinet and comprises a cover element and a supporting element having a through hole. The deposition source is disposed in the cabinet. A substrate is subsequently disposed on the supporting element in order to make a deposition surface of the substrate exposed from the through hole. The cover element is then engaged with the supporting element to secure the substrate therebetween. Next, a deposition vapor is provided from the deposition source to get in touch with the deposition surface.

Abstract: A substrate carrier for performing a deposition process comprises a supporting element and a cover element. The supporting element having a through hole is used to carry a substrate. The cover element is removably engaged with the supporting element, so as to secure the substrate therebetween and expose a deposition surface of the substrate from the through hole.

Abstract: A substrate carrier for performing a deposition process comprises a supporting element and a cover element. The supporting element having a through hole is used to carry a substrate. The cover element is removably engaged with the supporting element, so as to secure the substrate therebetween and expose a deposition surface of the substrate from the through hole.

Abstract: A process of physical vapor depositing mirror layer with improved reflectivity is disclosed. A wafer is loaded into a PVD tool comprising a degas chamber, a Ti/TiN sputter deposition chamber, a cooling chamber, and an aluminum sputter deposition chamber. A wafer degas process is first performed within the degas chamber. The wafer is then transferred to the Ti/TiN sputter deposition chamber and deposition sputtering a layer of titanium onto the wafer. The wafer is transferred to the cooling chamber and gas cooling the wafer temperature down to 40-50° C. The wafer is then transferred to the aluminum sputter deposition chamber and deposition sputtering a layer of aluminum onto the wafer at 40-50° C. with a backside gas turned off. The deposited layer of aluminum over the wafer has a reflectivity of about 0.925 at wavelength of around 380 nm.

Abstract: A process of physical vapor depositing mirror layer with improved reflectivity is disclosed. A wafer is loaded into a PVD tool comprising a degas chamber, a Ti/TiN sputter deposition chamber, a cooling chamber, and an aluminum sputter deposition chamber. A wafer degas process is first performed within the degas chamber. The wafer is then transferred to the Ti/TiN sputter deposition chamber and deposition sputtering a layer of titanium onto the wafer. The wafer is transferred to the cooling chamber and gas cooling the wafer temperature down to 40-50° C. The wafer is then transferred to the aluminum sputter deposition chamber and deposition sputtering a layer of aluminum onto the wafer at 40-50° C. with a backside gas turned off. The deposited layer of aluminum over the wafer has a reflectivity of about 0.925 at wavelength of around 380 nm.