Abstract: A fin field effect transistor (FinFET) device structure is provided. The FinFET device structure includes a plurality of fin structures above a substrate, an isolation structure over the substrate and between the fin structures, and a gate structure formed over the fin structure. The FinFET device structure includes a source/drain (S/D) structure over the fin structure, and the S/D structure is adjacent to the gate structure. The FinFET device structure also includes a metal silicide layer over the S/D structure, and the metal silicide layer is in contact with the isolation structure.

Abstract: Methods of manufacturing a semiconductor structure are provided. One of the methods includes: receiving a substrate including a first conductive region of a first transistor and a second conductive region of a second transistor, wherein the first transistor and the second transistor have different conductive types; performing an amorphization on the first conductive region and the second conductive region; performing an implantation over the first conductive region of the first transistor; forming a contact material layer over the first conductive region and the second conductive region; performing a thermal anneal on the first conductive region and the second conductive region; and performing a laser anneal on the first conductive region and the second conductive region.

Abstract: A high-voltage transistor device has a substrate, an isolation structure, a source, a gate, a drain, a plurality of doped regions, a plurality of ion wells, and a first dielectric layer disposed on the substrate. The high-voltage transistor device further has a first conductive layer and a plurality of first field plate rings. The first conductive layer is electrically connected to the drain and at least one of the first field plate rings.

Abstract: A method of fabricating a deep well region of a high voltage device is provided. The method includes designating a deep well region that includes a designated highly doped region and a designed scarcely doped region in a substrate. A mask layer, which covers a periphery of the designated deep well region, is formed over the substrate, wherein the mask layer includes a plurality of shielding parts to cover a portion of the designated scarcely doped region. Using the mask layer as an implantation mask, an ion implantation process is performed to implant dopants into the substrate exposed by the mask and to form a plurality of undoped regions in the designated scarcely doped region covered by the shielding parts. The dopants in the designated scarcely doped region are then induced to diffuse to the undoped regions.

Abstract: A high-voltage transistor device has a substrate, an isolation structure, a source, a gate, a drain, a plurality of doped regions, a plurality of ion wells, and a first dielectric layer disposed on the substrate. The high-voltage transistor device further has a first conductive layer and a plurality of first field plate rings. The first conductive layer is electrically connected to the drain and at least one of the first field plate rings.

Abstract: A novel landing uniformity ring for an etch chamber is disclosed. The landing uniformity ring includes an annular ring body defining a ring opening and an increased-diameter inner flange extending inwardly from the ring body, into the ring opening. When mounted in a landing uniformity ring assembly, the inner flange is disposed at a horizontal gap distance with respect to the edge of the wafer which improves the flow efficiency of exhaust gases in the etch chamber. This prevents the accumulation of polymer residues on the assembly and reduces the incidence of particle-related defects in devices being fabricated on a wafer.

Abstract: A method and system for implementing a variable function circuit within a single semiconductor chip. The semiconductor chip can be configured as a single circuit that provides varying functions according to extrinsic conditions. The single circuit can be permitted to be switched between a particular function and a different particular function, thereby promoting a decreased complexity in circuit design and a decrease in physical dimensions necessary to manufacture the semiconductor chip. Additionally, at least one portion of the semiconductor chip may be designated to the particular function and at least one other portion of the semiconductor chip to the different particular function. The semiconductor chip may thus act as a function switch.

Abstract: A method and system for implementing a variable function circuit within a single semiconductor chip. The semiconductor chip can be configured as a single circuit that provides varying functions according to extrinsic conditions. The single circuit can be permitted to be switched between a particular function and a different particular function, thereby promoting a decreased complexity in circuit design and a decrease in physical dimensions necessary to manufacture the semiconductor chip. Additionally, at least one portion of the semiconductor chip may be designated to the particular function and at least one other portion of the semiconductor chip to the different particular function. The semiconductor chip may thus act as a function switch.