Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, and an annealing operation is performed on the fin structure. In the patterning of the semiconductor layer, a damaged area is formed on a sidewall of the fin structure, and the annealing operation eliminates the damaged area.

Abstract: An electronic device is provided, including a first circuit board, a second circuit board, a supporting member, and a first locking member. The first circuit board has a first hole. The second circuit board has a second hole, a pin, and a metal connector, wherein the pin is connected to the first circuit board. The supporting member has a first portion disposed in the first hole, a second portion, and a screw hole extending from the first portion to the second portion, wherein the diameter of the first portion is less than that of the second portion. The first locking member passes through the second hole and enters the screw hole to affix the second circuit board to the supporting member. The second portion is disposed between the first circuit board and the second circuit board to form a gap therebetween.