Abstract: A minimum IC operating voltage searching method includes acquiring a corner type of an IC, acquiring ring oscillator data of the IC, generating a first prediction voltage according to the corner type and the ring oscillator data by using a training model, generating a second prediction voltage according to the ring oscillator data by using a non-linear regression approach under an N-ordered polynomial, and generating a predicted minimum IC operating voltage according to the first prediction voltage and the second prediction voltage. N is a positive integer.

Abstract: The disclosure provides a power management method. The power management method is applicable to an electronic device. The electronic device is electrically coupled to an adapter, and includes a system and a battery. The adapter has a feed power. The battery has a discharge power. The power management method of the disclosure includes: reading a power value of the battery; determining a state of the system; and discharging power to the system, when the system is in a power-on state and the power value is greater than a charging stopping value, by using the battery, and controlling, according to the discharge power and the feed power, the adapter to selectively supply power to the system. The disclosure further provides an electronic device using the power management method.

Abstract: A method includes: positioning a wafer on an electrostatic chuck of a physical vapor deposition apparatus, the wafer including an opening exposing a conductive feature; setting a temperature of the wafer to a room temperature; forming a tungsten thin film in the opening by the physical vapor deposition apparatus, the tungsten thin film including a bottom portion that is on an upper surface of the conductive feature exposed by the opening, a top portion that is on an upper surface of a dielectric layer through which the opening extends and a sidewall portion that is on a sidewall of the dielectric layer exposed by the opening; removing the top portion and the sidewall portion of the tungsten thin film from over the opening; and forming a tungsten plug in the opening on the bottom portion by selectively depositing tungsten by a chemical vapor deposition operation.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming an epitaxial layer adjacent to the gate structure, and then forming a first cap layer on the epitaxial layer. Preferably, a top surface of the first cap layer includes a curve concave upward and a bottom surface of the first cap layer includes a planar surface higher than a top surface of the substrate.

Abstract: A semiconductor die and methods of forming the same and a package structure are provided. The semiconductor die includes a semiconductor substrate, a plurality of conductive pads over the semiconductor substrate, a passivation layer over the semiconductor substrate and partially covering the plurality of conductive pads, an interconnecting line disposed on the passivation layer, and a plurality of connectors disposed on and electrically connected to the plurality of conductive pads. Each of the plurality of connectors includes a stacked structure of a first conductive pillar and a second conductive pillar disposed directly on the first conductive pillar, wherein a span of the second conductive pillar is smaller than a span of the first conductive pillar, and an orthogonal projection of the second conductive pillar falls within an orthogonal projection of the first conductive pillar, and the interconnecting line is located beside and spaced apart from the plurality of connectors.

Abstract: An apparatus is provided. The apparatus includes a laser generation device configured to emit a laser signal to a semiconductor fabrication component. The apparatus includes a reflection detection device configured to receive a reflection signal comprising light, of the laser signal, reflected by a surface of the semiconductor fabrication component. The reflection detection device includes an optical filter. The optical filter is configured to block light, of the reflection signal, that has a wavelength outside a defined range of wavelengths. The optical filter is configured to provide filtered light, from the reflection signal, that has a wavelength within the defined range of wavelengths. The reflection detection device includes a light sensor configured to generate an electrical signal based upon the filtered light. The apparatus includes a computer configured to determine, based upon the electrical signal, measures of electrostatic field strength at the surface of the semiconductor fabrication component.

Abstract: An earphone with adjustable-length cable includes a plugging section, a connecting cable and a receiving section. The plugging section has an attach-conductive adapter and a plug at two ends respectively. The connecting cable connects the plugging section and the receiving section, and has at least one separable attaching cable. The separable attaching cable has two attach-conductive adapters at two ends respectively. The receiving section has an attach-conductive adapter and an audio-playing unit at two ends respectively. Each attach-conductive adapter is formed with an end surface, and has at least one attaching element and a plurality of conductive plates exposed at outside of the end surface. The attach-conductive adapters are attached each other by the attaching elements, and electrically connected to each other through the conductive plates, so that signals from the plugging section are transmitted to the receiving section and are played by the audio-playing unit.

Abstract: An earphone with adjustable-length cable includes a plugging section, a connecting cable and a receiving section. The plugging section has an attach-conductive adapter and a plug at two ends respectively. The connecting cable connects the plugging section and the receiving section, and has at least one separable attaching cable. The separable attaching cable has two attach-conductive adapters at two ends respectively. The receiving section has an attach-conductive adapter and an audio-playing unit at two ends respectively. Each attach-conductive adapter is formed with an end surface, and has at least one attaching element and a plurality of conductive plates exposed at outside of the end surface. The attach-conductive adapters are attached each other by the attaching elements, and electrically connected to each other through the conductive plates, so that signals from the plugging section are transmitted to the receiving section and are played by the audio-playing unit.