Patents by Inventor Chun-Hsun CHEN

Chun-Hsun CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12002684
    Abstract: A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.
    Type: Grant
    Filed: November 21, 2022
    Date of Patent: June 4, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Ji Cui, Fu-Ming Huang, Ting-Kui Chang, Tang-Kuei Chang, Chun-Chieh Lin, Wei-Wei Liang, Liang-Guang Chen, Kei-Wei Chen, Hung Yen, Ting-Hsun Chang, Chi-Hsiang Shen, Li-Chieh Wu, Chi-Jen Liu
  • Patent number: 12001616
    Abstract: A mouse device includes a lateral pressure sensing unit and a base unit having a base seat, a housing, and an inner space cooperatively defined by the base seat and the housing. The base seat is elongated in a front-rear direction, and includes a bottom face portion and an extension face portion surrounding and extending upwardly from the bottom face portion, and having spaced apart first and second lateral sections. The housing surrounds the base seat, extends upwardly from the extension face portion, and includes an operating portion extending upwardly from the first lateral section and having front, rear, upper, and lower pressing regions. The lateral pressure sensing unit is located in the inner space, is adjacent to the front, rear, upper and lower pressing regions, and is triggered upon operation on the operating portion.
    Type: Grant
    Filed: August 11, 2023
    Date of Patent: June 4, 2024
    Assignee: SUNREX TECHNOLOGY CORP.
    Inventors: Chun-Chieh Chen, Che-Hsun Chang, Chi-Shu Hsu, Chang-Cheng Lee
  • Publication number: 20240178264
    Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.
    Type: Application
    Filed: February 7, 2024
    Publication date: May 30, 2024
    Inventors: Chun-Wei HSU, Tsai-Hao HUNG, Chung-Yu LIN, Ying-Hsun CHEN
  • Patent number: 11996493
    Abstract: The present disclosure provides a light-emitting module and a display apparatus thereof. The light-emitting module includes a circuit substrate which includes a first surface and a second surface opposite to the first surface. The first surface includes a plurality of conductive channels, and the second surface includes a plurality of conductive pads. A plurality of light-emitting groups is arranged in a matrix on the first surface. Each of the light-emitting groups includes a red light-emitting diode chip, a green light-emitting diode chip, and a blue light-emitting diode chip. An electric component is disposed on the first surface and located in the light-emitting groups matrix. A translucent encapsulating component covers the plurality of light-emitting groups and the electric component. Wherein, the light-emitting groups matrix comprises m columns and n rows.
    Type: Grant
    Filed: August 6, 2021
    Date of Patent: May 28, 2024
    Assignee: EPISTAR CORPORATION
    Inventors: Min-Hsun Hsieh, Jen-Chieh Yu, Chun-Wei Chen
  • Patent number: 11996483
    Abstract: The present disclosure provides a semiconductor device that includes a semiconductor fin disposed over a substrate, an isolation structure at least partially surrounding the fin, an epitaxial source/drain (S/D) feature disposed over the semiconductor fin, where an extended portion of the epitaxial S/D feature extends over the isolation structure, and a silicide layer disposed on the epitaxial S/D feature, where the silicide layer covers top, bottom, sidewall, front, and back surfaces of the extended portion of the S/D feature.
    Type: Grant
    Filed: December 14, 2022
    Date of Patent: May 28, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Pei-Hsun Wang, Chih-Chao Chou, Shih-Cheng Chen, Jung-Hung Chang, Jui-Chien Huang, Chun-Hsiung Lin, Chih-Hao Wang
  • Patent number: 11984419
    Abstract: Package structures and methods for manufacturing the same are provided. The package structure includes a first bump structure formed over a first substrate. The first bump structure includes a first pillar layer formed over the first substrate and a first barrier layer formed over the first pillar layer. In addition, the first barrier layer has a first protruding portion laterally extending outside a first edge of the first pillar layer. The package structure further includes a second bump structure bonded to the first bump structure through a solder joint. In addition, the second bump structure includes a second pillar layer formed over a second substrate and a second barrier layer formed over the second pillar layer. The first protruding portion of the first barrier layer is spaced apart from the solder joint.
    Type: Grant
    Filed: July 26, 2022
    Date of Patent: May 14, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Cheng-Hung Chen, Yu-Nu Hsu, Chun-Chen Liu, Heng-Chi Huang, Chien-Chen Li, Shih-Yen Chen, Cheng-Nan Hsieh, Kuo-Chio Liu, Chen-Shien Chen, Chin-Yu Ku, Te-Hsun Pang, Yuan-Feng Wu, Sen-Chi Chiang
  • Publication number: 20240130038
    Abstract: A transmission device for suppressing the glass-fiber effect includes a circuit board and a transmission line. The circuit board includes a plurality of glass fibers, so as to define a fiber pitch. The transmission line is disposed on the circuit board. The transmission line includes a plurality of non-parallel segments. Each of the non-parallel segments of the transmission line has an offset distance with respect to a reference line. The offset distance is longer than or equal to a half of the fiber pitch.
    Type: Application
    Filed: November 23, 2022
    Publication date: April 18, 2024
    Applicants: UNIMICRON TECHNOLOGY CORP., National Taiwan University
    Inventors: Chin-Hsun WANG, Ruey-Beei Wu, Ching-Sheng Chen, Chun-Jui Hung, Wei-Yu Liao, Chi-Min Chang
  • Publication number: 20240105805
    Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes channel structures vertically stacked over a substrate and a source/drain structure laterally attached to the channel structures in the first direction. The semiconductor structure also includes a dielectric wall structure laterally attached to the channel structures in the second direction. The second direction is different from the first direction. In addition, the dielectric wall structure includes a bottom portion and a cap layer formed over the bottom portion. The semiconductor structure also includes an isolation feature vertically overlapping the cap layer of the dielectric wall structure and a gate structure formed around the channel structures and covering a sidewall of the isolation feature.
    Type: Application
    Filed: February 2, 2023
    Publication date: March 28, 2024
    Inventors: Chun-Sheng LIANG, Hong-Chih CHEN, Ta-Chun LIN, Shih-Hsun CHANG, Chih-Hao CHANG
  • Publication number: 20240096701
    Abstract: A device includes: a stack of semiconductor nanostructures; a gate structure wrapping around the semiconductor nanostructures, the gate structure extending in a first direction; a source/drain region abutting the gate structure and the stack in a second direction transverse the first direction; a contact structure on the source/drain region; a backside conductive trace under the stack, the backside conductive trace extending in the second direction; a first through via that extends vertically from the contact structure to a top surface of the backside dielectric layer; and a gate isolation structure that abuts the first through via in the second direction.
    Type: Application
    Filed: May 17, 2023
    Publication date: March 21, 2024
    Inventors: Chun-Yuan CHEN, Huan-Chieh SU, Ching-Wei TSAI, Shang-Wen CHANG, Yi-Hsun CHIU, Chih-Hao WANG
  • Patent number: 11918387
    Abstract: An infant care apparatus includes a piezoelectric sensor and an infrared array sensor. The piezoelectric sensor senses a respiration rate and a heart rate of an infant. The infrared array sensor senses a body temperature and an occupancy state of the infant in a non-contact manner. The abovementioned infant care apparatus can assist in determining an abnormality of the respiration rate and the heart rate of the infant based on the occupancy state of the infant output by the infrared array sensor, so as to reduce a false alarm rate.
    Type: Grant
    Filed: December 4, 2020
    Date of Patent: March 5, 2024
    Assignee: ORIENTAL SYSTEM TECHNOLOGY INC.
    Inventors: Chein-Hsun Wang, Chun-Chiang Chen, Wen-Chie Huang, Ming Le
  • Patent number: 11923396
    Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.
    Type: Grant
    Filed: April 18, 2022
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Wei Hsu, Tsai-Hao Hung, Chung-Yu Lin, Ying-Hsun Chen
  • Publication number: 20240068705
    Abstract: This disclosure is a condensate evaporation device. An air conditioning apparatus includes a compressor, an evaporator and a condenser connected with one another. A water tray is arranged to receive the condensate. A water distribution module includes a water separator base and a water separator piece. The water separator piece and the water separator base are combined to define a water channel. The condensate flows through the water channel to evenly flow out. A multi-folded water absorbing body is arranged on one side of the water separator base to absorb the condensate flowed out from the water separator base. The water tank is arranged on a bottom side of the multi-folded water absorbing body. A fan is arranged on one side of the multi-folded water absorbing body. Accordingly, the condensate may be evaporated efficiently.
    Type: Application
    Filed: January 18, 2023
    Publication date: February 29, 2024
    Inventors: Chao-Hsien CHAN, Yi-Chung CHOU, Chun-Hsun CHEN