Patents by Inventor Chun-Huang Tsai

Chun-Huang Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200403077
    Abstract: A method for fabricating semiconductor device includes the steps of first forming a silicon layer on a substrate and then forming a metal silicon nitride layer on the silicon layer, in which the metal silicon nitride layer includes a bottom portion, a middle portion, and a top portion and a concentration of silicon in the top portion is greater than a concentration of silicon in the middle portion. Next, a conductive layer is formed on the metal silicon nitride layer and the conductive layer, the metal silicon nitride layer, and the silicon layer are patterned to form a gate structure.
    Type: Application
    Filed: September 4, 2020
    Publication date: December 24, 2020
    Inventors: Chun-Chieh Chiu, Pin-Hong Chen, Yi-Wei Chen, Tsun-Min Cheng, Chih-Chien Liu, Tzu-Chieh Chen, Chih-Chieh Tsai, Kai-Jiun Chang, Yi-An Huang, Chia-Chen Wu, Tzu-Hao Liu
  • Patent number: 10804365
    Abstract: A method for fabricating semiconductor device includes the steps of first forming a silicon layer on a substrate and then forming a metal silicon nitride layer on the silicon layer, in which the metal silicon nitride layer includes a bottom portion, a middle portion, and a top portion and a concentration of silicon in the top portion is greater than a concentration of silicon in the middle portion. Next, a conductive layer is formed on the metal silicon nitride layer and the conductive layer, the metal silicon nitride layer, and the silicon layer are patterned to form a gate structure.
    Type: Grant
    Filed: May 22, 2018
    Date of Patent: October 13, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Chun-Chieh Chiu, Pin-Hong Chen, Yi-Wei Chen, Tsun-Min Cheng, Chih-Chien Liu, Tzu-Chieh Chen, Chih-Chieh Tsai, Kai-Jiun Chang, Yi-An Huang, Chia-Chen Wu, Tzu-Hao Liu
  • Patent number: 10794388
    Abstract: A fan failure backup apparatus includes a first fan module and a second fan module. When a second control unit of the second fan module realizes that the first fan module is failed through a first control unit of the first fan module, and the second control unit realizes that the second fan module is not failed, the second control unit controls the second fan module to additionally enhance a pressure-flow characteristic of a second fan unit of the second fan module.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: October 6, 2020
    Assignee: Delta Electronics, Inc.
    Inventors: Wei-Shuo Tseng, Chia-Feng Wu, Po-Hui Shen, Chia-Huang Wu, Chun-Chieh Tsai, Wen-Chih Wang
  • Publication number: 20200283621
    Abstract: A biodegradable plastic composition is used to manufacture a biodegradable plastic. The biodegradable plastic composition includes a biodegradable polyester, a polysaccharide, and a modifier. The modifier is used to compound the polysaccharide and the biodegradable polyester to obtain a biodegradable plastic. The biodegradable plastic has a tensile strength greater than 3 MPa and an elongation greater than 81%.
    Type: Application
    Filed: January 9, 2020
    Publication date: September 10, 2020
    Applicants: Tatung Company, TATUNG UNIVERSITY
    Inventors: C. Will Chen, Chun-Yeh Chu, Ping-Hsun Tsai, Ching-Huang Wang, Chiung-Cheng Huang, Tai-Wei Tseng
  • Publication number: 20200227264
    Abstract: A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a silicon layer on the substrate, a titanium nitride (TiN) layer on the silicon layer, a titanium (Ti) layer between the TiN layer and the silicon layer, a metal silicide between the Ti layer and the silicon layer, a titanium silicon nitride (TiSiN) layer on the TiN layer, and a conductive layer on the TiSiN layer.
    Type: Application
    Filed: March 27, 2020
    Publication date: July 16, 2020
    Inventors: Tzu-Hao Liu, Yi-Wei Chen, Tsun-Min Cheng, Kai-Jiun Chang, Chia-Chen Wu, Yi-An Huang, Po-Chih Wu, Pin-Hong Chen, Chun-Chieh Chiu, Tzu-Chieh Chen, Chih-Chien Liu, Chih-Chieh Tsai, Ji-Min Lin
  • Patent number: 10651040
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a titanium nitride (TiN) layer on a silicon layer; performing a first treatment process by reacting the TiN layer with dichlorosilane (DCS) to form a titanium silicon nitride (TiSiN) layer; forming a conductive layer on the TiSiN layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.
    Type: Grant
    Filed: May 22, 2018
    Date of Patent: May 12, 2020
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Tzu-Hao Liu, Yi-Wei Chen, Tsun-Min Cheng, Kai-Jiun Chang, Chia-Chen Wu, Yi-An Huang, Po-Chih Wu, Pin-Hong Chen, Chun-Chieh Chiu, Tzu-Chieh Chen, Chih-Chien Liu, Chih-Chieh Tsai, Ji-Min Lin
  • Patent number: 10573898
    Abstract: The disclosure provides a high permeable porous substrate. The high permeable porous substrate includes a porous substrate body and a plurality of channels. The plurality of channels penetrate the first surface of the porous substrate body and do not penetrate the second surface of the porous substrate body. In addition, a solid oxide fuel cell supported by the high permeable porous substrate is also provided.
    Type: Grant
    Filed: June 20, 2017
    Date of Patent: February 25, 2020
    Assignee: INSTITUTE OF NUCLEAR ENERGY RESEARCH ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN
    Inventors: Chang-Sing Hwang, Chun-Huang Tsai, Chun-Liang Chang, Zong-Yang Chuang Shie, Sheng-Fu Yang, Te-Jung Huang, Shih-Wei Cheng
  • Patent number: 10547079
    Abstract: A portable flame electric generation device having metal-supported solid oxide fuel cells includes a furnace, a heat shield structure, a plurality of metal-supported solid oxide fuel cells and a housing structure. Each of the metal-supported solid oxide fuel cells includes a porous metal substrate, a first anode layer, a second anode layer, an anode isolation layer, an electrolyte layer, a cathode isolation layer, a cathode interface layer and a cathode current-collecting layer. The metal-supported solid oxide fuel cell is capable of quickly starting up and withstanding thermal shocks, and also liquefied fuel cartridges are applied as heating and fuel sources for transforming the CO and H2 fuels into electricity via electrochemical reactions.
    Type: Grant
    Filed: June 23, 2017
    Date of Patent: January 28, 2020
    Assignee: INSTITUTE OF NUCLEAR ENERGY RESEARCH, ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN, R.O.C.
    Inventors: Chang-Sing Hwang, Chun-Huang Tsai, Chun-Liang Chang, Ming-Hsiu Wu, Te-Jung Huang, Sheng-Fu Yang, Cheng-Yun Fu
  • Publication number: 20190319107
    Abstract: A method for fabricating semiconductor device includes the steps of first forming a silicon layer on a substrate and then forming a metal silicon nitride layer on the silicon layer, in which the metal silicon nitride layer includes a bottom portion, a middle portion, and a top portion and a concentration of silicon in the top portion is greater than a concentration of silicon in the middle portion. Next, a conductive layer is formed on the metal silicon nitride layer and the conductive layer, the metal silicon nitride layer, and the silicon layer are patterned to form a gate structure.
    Type: Application
    Filed: May 22, 2018
    Publication date: October 17, 2019
    Inventors: Chun-Chieh Chiu, Pin-Hong Chen, Yi-Wei Chen, Tsun-Min Cheng, Chih-Chien Liu, Tzu-Chieh Chen, Chih-Chieh Tsai, Kai-Jiun Chang, Yi-An Huang, Chia-Chen Wu, Tzu-Hao Liu
  • Publication number: 20190318933
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a titanium nitride (TiN) layer on a silicon layer; performing a first treatment process by reacting the TiN layer with dichlorosilane (DCS) to form a titanium silicon nitride (TiSiN) layer; forming a conductive layer on the TiSiN layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.
    Type: Application
    Filed: May 22, 2018
    Publication date: October 17, 2019
    Inventors: Tzu-Hao Liu, Yi-Wei Chen, Tsun-Min Cheng, Kai-Jiun Chang, Chia-Chen Wu, Yi-An Huang, Po-Chih Wu, Pin-Hong Chen, Chun-Chieh Chiu, Tzu-Chieh Chen, Chih-Chien Liu, Chih-Chieh Tsai, Ji-Min Lin
  • Patent number: 10374051
    Abstract: A method for fabricating semiconductor device includes the steps of: forming a silicon layer on a substrate; forming a metal silicon nitride layer on the silicon layer; forming a stress layer on the metal silicon nitride layer; performing a thermal treatment process; removing the stress layer; forming a conductive layer on the metal silicon nitride layer; and patterning the conductive layer, the metal silicon nitride layer, and the silicon layer to form a gate structure.
    Type: Grant
    Filed: May 23, 2018
    Date of Patent: August 6, 2019
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Ji-Min Lin, Yi-Wei Chen, Tsun-Min Cheng, Pin-Hong Chen, Chih-Chien Liu, Chun-Chieh Chiu, Tzu-Chieh Chen, Chih-Chieh Tsai, Yi-An Huang, Kai-Jiun Chang
  • Patent number: 10373579
    Abstract: In an exemplary flat display apparatus and control circuit and method for controlling the flat display apparatus, the flat display apparatus includes a plurality of gate driving units, each of which controls the operation of a scan line in the flat display apparatus. The flat display apparatus provides a first gate high level voltage signal and a second gate high level voltage signal to the gate driving units such that the first and second gate high level voltage signals are used as voltage signals transmitted to corresponding scan lines. The first and second gate high level voltage signals respectively include a falling edge with a slope. Duration time of the falling edge of the first gate high level voltage signal is longer than that of the falling edge of the second gate high level voltage signal.
    Type: Grant
    Filed: June 6, 2017
    Date of Patent: August 6, 2019
    Assignee: AU OPTRONICS CORP.
    Inventors: Chun-Fan Chung, Tien-Lun Ting, Chia-Chi Tsai, Ming-Hung Tu, Chien-Huang Liao, Yu-Chieh Chen, Pin-Miao Liu
  • Publication number: 20190219061
    Abstract: A fan failure backup apparatus includes a first fan module and a second fan module. When a second control unit of the second fan module realizes that the first fan module is failed through a first control unit of the first fan module, and the second control unit realizes that the second fan module is not failed, the second control unit controls the second fan module to additionally enhance a pressure-flow characteristic of a second fan unit of the second fan module.
    Type: Application
    Filed: November 26, 2018
    Publication date: July 18, 2019
    Inventors: Wei-Shuo TSENG, Chia-Feng WU, Po-Hui SHEN, Chia-Huang WU, Chun-Chieh TSAI, Wen-Chih WANG
  • Patent number: 9979032
    Abstract: A treatment method for solid oxide fuel cells includes: measuring a radius of curvature of a cell; measuring a surface resistance of cathode current collecting layer of a cell; performing an alcohol permeating test of a cell; performing simultaneously several stages of compression and heating or cooling to a cell; an apparatus for completing above stages is also disclosed.
    Type: Grant
    Filed: October 15, 2015
    Date of Patent: May 22, 2018
    Assignee: INSTITUTE OF NUCLEAR ENERGY RESEARCH ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN
    Inventors: Chang-Sing Hwang, Chun-Liang Chang, Chun-Huang Tsai, Sheng-Huei Nian, Chih-Ming Chuang, Shih-Wei Cheng
  • Publication number: 20180115008
    Abstract: A portable flame electric generation device having metal-supported solid oxide fuel cells includes a furnace, a heat shield structure, a plurality of metal-supported solid oxide fuel cells and a housing structure. Each of the metal-supported solid oxide fuel cells includes a porous metal substrate, a first anode layer, a second anode layer, an anode isolation layer, an electrolyte layer, a cathode isolation layer, a cathode interface layer and a cathode current-collecting layer. The metal-supported solid oxide fuel cell is capable of quickly starting up and withstanding thermal shocks, and also liquefied fuel cartridges are applied as heating and fuel sources for transforming the CO and H2 fuels into electricity via electrochemical reactions.
    Type: Application
    Filed: June 23, 2017
    Publication date: April 26, 2018
    Inventors: CHANG-SING HWANG, CHUN-HUANG TSAI, CHUN-LIANG CHANG, MING-HSIU WU, TE-JUNG HUANG, SHENG-FU YANG, CHENG-YUN FU
  • Patent number: 9905873
    Abstract: The invention provides a permeable metal substrate and its manufacturing method. The permeable metal substrate includes a substrate body and a permeable powder layer. The permeable powder layer is located on the top of the substrate body. The substrate body can be a thick substrate or formed of a thick substrate and a thin substrate that are welded together. Both the thick and thin substrates have a plurality of permeable straight gas channels. In addition, a metal-supported solid oxide fuel cell and its manufacturing method are also provided.
    Type: Grant
    Filed: July 20, 2016
    Date of Patent: February 27, 2018
    Assignee: INSTITUTE OF NUCLEAR ENERGY RESEARCH, ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN, R.O.C.
    Inventors: Chang-Sing Hwang, Chun-Huang Tsai, Chun-Liang Chang, Zong-Yang Chuang Shie, Sheng-Fu Yang, Te-Jung Huang, Ming-Hsiu Wu, Jing-Kai Lin
  • Patent number: 9796021
    Abstract: The disclosure provides a porous metal substrate structure with high gas permeability and redox stability for a SOFC and the fabrication process thereof, the porous metal substrate structure comprising: a porous metal plate composed of first metal particles; and a porous metal film composed of second metal particles and formed on the porous metal plate; wherein the porous metal plate has a thickness more than the porous metal film, and the first metal particle has a size more than the second metal particle. Further, a porous shell containing Fe is formed on the surface of each metal particle by impregnating a solution containing Fe in a high temperature sintering process of reducing or vacuum atmosphere, and the oxidation and reduction processes. The substrate uses the porous shells containing Fe particles to absorb the leakage oxygen.
    Type: Grant
    Filed: June 24, 2015
    Date of Patent: October 24, 2017
    Assignee: INSTITUTE OF NUCLEAR ENERGY RESEARCH ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN
    Inventors: Chang-Sing Hwang, Chun-Huang Tsai, Jen-Feng Yu, Chun-Liang Chang, Jun-Meng Lin, Shih-Wei Cheng
  • Publication number: 20170288235
    Abstract: The disclosure provides a high permeable porous substrate. The high permeable porous substrate includes a porous substrate body and a plurality of channels. The plurality of channels penetrate the first surface of the porous substrate body and do not penetrate the second surface of the porous substrate body. In addition, a solid oxide fuel cell supported by the high permeable porous substrate is also provided.
    Type: Application
    Filed: June 20, 2017
    Publication date: October 5, 2017
    Inventors: CHANG-SING HWANG, CHUN-HUANG TSAI, CHUN-LIANG CHANG, ZONG-YANG CHUANG SHIE, SHENG-FU YANG, TE-JUNG HUANG, SHIH-WEI CHENG
  • Patent number: 9780384
    Abstract: A double-layer anode structure on a pretreated porous metal substrate and a method for fabricating the same, for improving the redox stability and decreasing the anode polarization resistance of a SOFC. The anode structure includes: a porous metal substrate of high gas permeability; a first porous anode functional layer, formed on the porous metal substrate by a high-voltage high-enthalpy Ar—He—H2—N2 atmospheric-pressure plasma spraying process; and a second porous anode functional layer, formed on the first porous anode functional layer by a high-voltage high-enthalpy Ar—He—H2—N2 atmospheric-pressure plasma spraying and hydrogen reduction. The first porous anode functional layer is composed a redox stable perovskite, the second porous anode functional layer is composed of a nanostructured cermet. The first porous anode functional layer is also used to prevent the second porous anode functional layer from being diffused by the composition elements of the porous metal substrate.
    Type: Grant
    Filed: August 6, 2015
    Date of Patent: October 3, 2017
    Assignee: INSTITUTE OF NUCLEAR ENERGY RESEARCH, ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN, R.O.C.
    Inventors: Chang-Sing Hwang, Chun-Huang Tsai, Jen-Feng Yu, Chun-Liang Chang, Jun-Meng Lin, Shih-Wei Cheng
  • Patent number: 9716277
    Abstract: A high permeable porous substrate for a solid oxide fuel cell and a production method to produce the substrate are provided. The high permeable porous substrate for a solid oxide fuel cell includes a porous substrate body and a plurality of channels. The plurality of channels penetrate the first surface of the porous substrate body and does not penetrate the second surface of the porous substrate body. In addition, a production method for the high permeable porous substrate of a solid oxide fuel cell is also provided.
    Type: Grant
    Filed: April 8, 2015
    Date of Patent: July 25, 2017
    Assignee: INSTITUTE OF NUCLEAR ENERGY RESEARCH ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN
    Inventors: Chang-Sing Hwang, Chun-Huang Tsai, Chun-Liang Chang, Zong-Yang Chuang Shie, Sheng-Fu Yang, Te-Jung Huang, Shih-Wei Cheng