Patents by Inventor Chun-Hui Chen

Chun-Hui Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10551340
    Abstract: The present invention provides capacitor-based fluid sensing units. The capacitor-based fluid sensing unit comprises a substrate, a first electrode configured on the substrate, a sensing layer configured on the first electrode, a second electrode configured on the sensing layer. More particularly, the second electrode is a porous electrode, while the sensing layer is made of a porous dielectric material and has a thickness between 50 nm and 5 mm. Permittivity of the sensing layer changes as fluid permeates from the second electrode to the sensing layer. The subsequent change in capacitance of the capacitor-based fluid sensing unit is used to determine the volume of the fluid.
    Type: Grant
    Filed: January 13, 2017
    Date of Patent: February 4, 2020
    Assignee: CHANG GUNG UNIVERSITY
    Inventors: Chao-Sung Lai, Chia-Ming Yang, Hsin-Yin Peng, Wei-Yin Zeng, Chun-Hui Chen
  • Patent number: 10473613
    Abstract: Light-addressable potentiometric sensing units are provided. A light-addressable potentiometric sensing unit comprises a conductive substrate, a metal oxide semiconductor layer, and a sensing layer. The metal oxide semiconductor layer is made of indium gallium zinc oxide, indium gallium oxide, indium zinc oxide, indium oxide co-doped with tin and zinc, tin oxide, or zinc oxide. The wide-band gap characteristic of the metal oxide semiconductor layer enables the light-addressable potentiometric sensing unit to resist the interference from visible light. The light-addressable potentiometric sensing unit therefore exhibits a more stable performance.
    Type: Grant
    Filed: August 15, 2016
    Date of Patent: November 12, 2019
    Assignee: CHANG GUNG UNIVERSITY
    Inventors: Chao-Sung Lai, Chia-Ming Yang, Chun-Hui Chen, Tsung-Cheng Chen
  • Patent number: 10157682
    Abstract: The present invention provides a data storage device including a flash memory and a controller. The controller is configured to perform a first read operation to read a first page corresponding to a first word line of the flash memory according to a read command of a host, and perform a distribution-adjustment procedure when data read by the first read operation cannot be recovered by coding, wherein the controller is further configured to perform an adjustable read operation to read a second page corresponding to a second word line of the flash memory in the distribution-adjustment procedure.
    Type: Grant
    Filed: January 6, 2016
    Date of Patent: December 18, 2018
    Assignee: SILICON MOTION, INC.
    Inventors: Chun-Yi Chen, Chun-Hui Chen
  • Publication number: 20180074002
    Abstract: The present invention provides capacitor-based fluid sensing units. The capacitor-based fluid sensing unit comprises a substrate, a first electrode configured on the substrate, a sensing layer configured on the first electrode, a second electrode configured on the sensing layer. More particularly, the second electrode is a porous electrode, while the sensing layer is made of a porous dielectric material and has a thickness between 50 nm and 5 mm. Permittivity of the sensing layer changes as fluid permeates from the second electrode to the sensing layer. The subsequent change in capacitance of the capacitor-based fluid sensing unit is used to determine the volume of the fluid.
    Type: Application
    Filed: January 13, 2017
    Publication date: March 15, 2018
    Inventors: CHAO-SUNG LAI, CHIA-MING YANG, HSIN-YIN PENG, WEI-YIN ZENG, CHUN-HUI CHEN
  • Publication number: 20170176376
    Abstract: Light-addressable potentiometric sensing units are provided. A light-addressable potentiometric sensing unit comprises a conductive substrate, a metal oxide semiconductor layer, and a sensing layer. The metal oxide semiconductor layer is made of indium gallium zinc oxide, indium gallium oxide, indium zinc oxide, indium oxide co-doped with tin and zinc, tin oxide, or zinc oxide. The wide-band gap characteristic of the metal oxide semiconductor layer enables the light-addressable potentiometric sensing unit to resist the interference from visible light. The light-addressable potentiometric sensing unit therefore exhibits a more stable performance.
    Type: Application
    Filed: August 15, 2016
    Publication date: June 22, 2017
    Inventors: CHAO-SUNG LAI, CHIA-MING YANG, CHUN-HUI CHEN, TSUNG-CHENG CHEN
  • Patent number: 9361999
    Abstract: The present invention provides a data storage device including a flash memory and a controller. The controller is configured to perform a first read operation to read a first page corresponding to a first word line of the flash memory according to a read command of a host, and perform a distribution-adjustment procedure when data read by the first read operation cannot be recovered by coding, wherein the controller is further configured to perform an adjustable read operation to read a second page corresponding to a second word line of the flash memory in the distribution-adjustment procedure.
    Type: Grant
    Filed: May 7, 2014
    Date of Patent: June 7, 2016
    Assignee: SILICON MOTION, INC.
    Inventors: Chun-Yi Chen, Chun-Hui Chen
  • Publication number: 20160117220
    Abstract: The present invention provides a data storage device including a flash memory and a controller. The controller is configured to perform a first read operation to read a first page corresponding to a first word line of the flash memory according to a read command of a host, and perform a distribution-adjustment procedure when data read by the first read operation cannot be recovered by coding, wherein the controller is further configured to perform an adjustable read operation to read a second page corresponding to a second word line of the flash memory in the distribution-adjustment procedure.
    Type: Application
    Filed: January 6, 2016
    Publication date: April 28, 2016
    Inventors: Chun-Yi CHEN, Chun-Hui CHEN
  • Publication number: 20140359345
    Abstract: The present invention provides a data storage device including a flash memory and a controller. The controller is configured to perform a first read operation to read a first page corresponding to a first word line of the flash memory according to a read command of a host, and perform a distribution-adjustment procedure when data read by the first read operation cannot be recovered by coding, wherein the controller is further configured to perform an adjustable read operation to read a second page corresponding to a second word line of the flash memory in the distribution-adjustment procedure.
    Type: Application
    Filed: May 7, 2014
    Publication date: December 4, 2014
    Applicant: Silicon Motion, Inc.
    Inventors: Chun-Yi CHEN, Chun-Hui CHEN
  • Patent number: 5067205
    Abstract: A paper clip made of a resilient steel wire bent into shape, which comprises two front bends disposed at same plane and formed into a clamping portion for holding sheets of paper inserted therebetween, and an unitary wave-like back bend substantially perpendicular to the two front bends and forming a stop portion for stopping the paper which is fastened in the clamping portion. The wave-like back bend is formed of at least one peak and one wave trough so as to provide stronger tensile elasticity permitting the clamping portion to tightly retain more sheets of paper.
    Type: Grant
    Filed: September 27, 1990
    Date of Patent: November 26, 1991
    Inventors: Chun-Hui Chen, Guu-Trang Lin