Abstract: A capacitor includes cup-shaped lower electrodes disposed on a substrate, a capacitor dielectric layer conformally covering inner surfaces and outer surfaces of the cup-shaped lower electrodes, and a support layer disposed between outer surfaces of the cup-shaped lower electrodes to connect the cup-shaped lower electrodes. The capacitor further includes an annealed oxide layer, which is interposed between the inner surfaces of the cup-shaped lower electrodes and the capacitor dielectric layer, and is also interposed between a portion of the outer surfaces of the cup-shaped lower electrodes and the capacitor dielectric layer. A method for forming the capacitor is also provided.

Abstract: A resistive random access memory (RRAM) structure includes a RRAM cell, spacers and a dielectric layer. The RRAM cell is disposed on a substrate. The spacers are disposed beside the RRAM cell, wherein widths of top surfaces of the spacers are larger than or equal to widths of bottom surfaces of the spacers. The dielectric layer blanketly covers the substrate and sandwiches the RRAM cell, wherein the spacers are located in the dielectric layer. A method for forming the resistive random access memory (RRAM) structure is also provided.

Abstract: A resistive random access memory structure includes a first inter-layer dielectric layer; a bottom electrode disposed in the first inter-layer dielectric layer; a capping layer disposed on the bottom electrode and on the first inter-layer dielectric layer; and a through hole disposed in the capping layer. The through hole partially exposes a top surface of the bottom electrode. A variable resistance layer is disposed within the through hole. A top electrode is disposed within the through hole and on the variable resistance layer. A second inter-layer dielectric layer covers the top electrode and the capping layer.

Abstract: A resistive random access memory (RRAM) structure includes a RRAM cell, spacers and a dielectric layer. The RRAM cell is disposed on a substrate. The spacers are disposed beside the RRAM cell, wherein widths of top surfaces of the spacers are larger than or equal to widths of bottom surfaces of the spacers. The dielectric layer blanketly covers the substrate and sandwiches the RRAM cell, wherein the spacers are located in the dielectric layer. A method for forming the resistive random access memory (RRAM) structure is also provided.

Abstract: An object tracking system for use in traffic flow analytics and a traffic flow analytic method. The system comprises: an image processing module arranged to receiving a sequence of images capturing at least one object moving along a predetermined path in an area; an object detection module arranged to detect the at least one object including identifying a predetermined category of the detected object; and an object tracking module arranged to track the at least one object travelling from an entrance to an exit of the predetermined path based on coordinates of the object in the sequence of images being detected.

Abstract: The invention provides a drainage network monitoring system. The system comprises a sensing module for detecting one or more conditions at a location in the drainage network; a processing module for processing data received from the sensing module; a wireless communications module for communicating the processed data substantially in real-time to one or more wireless devices including a wireless notification device configured to issue notification information to users, wherein the wireless communications module utilizes a narrow bandwidth, low power wireless communications protocol to communicate processed data to the wireless notification device, and wherein the sensing module has a standalone power supply.

Abstract: A retrofit system for the monitoring of seatbelt status in mass transit vehicles is adapted for retrofitting in different existing vehicles and includes a plurality of non-contact position sensors each associated with the buckle and tongue of a seatbelt, and a seat pan upholstery module with a seat occupancy sensor fixed to its inner side. The sensor of the non-contact position sensors is adapted to be fixed to an external surface of the buckle housing. A monitoring unit is coupled to the non-contact position sensors and occupancy sensors and to a display of seatbelt status comprising an indication that, when each of the seats is occupied, whether the respective seatbelt is in the fastened positioned or a released position.

Abstract: A resistive random access memory (RRAM) structure includes a RRAM cell, spacers and a dielectric layer. The RRAM cell is disposed on a substrate. The spacers are disposed beside the RRAM cell, wherein widths of top surfaces of the spacers are larger than or equal to widths of bottom surfaces of the spacers. The dielectric layer blanketly covers the substrate and sandwiches the RRAM cell, wherein the spacers are located in the dielectric layer. A method for forming said resistive random access memory (RRAM) structure is also provided.

Abstract: A system (100) for monitoring stability of trees (10) in an area includes a server (101), one or more sensor modules (102, 202) being attached to each of the trees (10) in a network of trees, configured for obtaining tilt angle data pertaining to inclination of at least a portion of the tree (10), and relaying the tilt angle data to the server (101), a weather observing device (103, 203) connected to the server (101), for obtaining localized environmental variables representing a local weather condition in the area, and a monitoring platform (20) connected with the server (101), configured for storing and processing the data. The system is configured for monitoring, based on the data and the environmental variables, the tilt angle data of each of the trees (10), and identifying one or more abnormalities of one or more of the trees (10), and indicating through the monitoring platform (20) the one or more abnormalities.

Abstract: A resistive random-access memory (RRAM) device, including a bottom electrode, a high work function layer, a resistive material layer and a top electrode sequentially stacked on a substrate, wherein the resistive material layer includes a bottom part and a top part, first spacers covering sidewalls of the top part and the top electrode, and second spacers covering sidewalls of the bottom part, thereby constituting a RRAM cell.

Abstract: A resistive random-access memory (RRAM) device includes a bottom electrode, a high work function layer, a resistive material layer, a top electrode and high work function spacers. The bottom electrode, the high work function layer, the resistive material layer and the top electrode are sequentially stacked on a substrate, wherein the resistive material layer includes a bottom part and a top part. The high work function spacers cover sidewalls of the bottom part, thereby constituting a RRAM cell. The present invention also provides a method of forming a RRAM device.

Abstract: Provided is a resistive random access memory (RRAM). The resistive random access memory includes a plurality of unit structures disposed on a substrate. Each of the unit structures includes a first electrode, and a first metal oxide layer. The first electrode is disposed on the substrate. The first metal oxide layer is disposed on the first electrode. In addition, the resistive random access memory includes a second electrode. The second electrode is disposed on the plurality of unit structures and connected to the plurality of unit structures.

Abstract: A resistive random access memory (RRAM) structure includes a RRAM cell, spacers and a dielectric layer. The RRAM cell is disposed on a substrate. The spacers are disposed beside the RRAM cell, wherein widths of top surfaces of the spacers are larger than or equal to widths of bottom surfaces of the spacers. The dielectric layer blanketly covers the substrate and sandwiches the RRAM cell, wherein the spacers are located in the dielectric layer. A method for forming the resistive random access memory (RRAM) structure is also provided.

Abstract: A RRAM device includes a bottom electrode, a resistive material layer, atop electrode, a hard mask and high work function sidewall parts. The bottom electrode, the resistive material layer, the top electrode and the hard mask are sequentially stacked on a substrate. The high work function sidewall parts cover sidewalls of the top electrode and sidewalls of the hard mask, thereby constituting a RRAM cell. A method of forming the RRAM device is also provided.

Abstract: An RRAM includes a bottom electrode, a resistive switching layer and a top electrode. The bottom electrode includes an inverted T-shaped profile. The resistive switching layer covers the bottom electrode. The top electrode covers the resistive switching layer. The inverted T-shaped profile includes a bottom element and a vertical element. The vertical element is disposed on the bottom element. The shape of the vertical element includes a rectangle or a trapezoid.

Abstract: Provided are a resistive random access memory (RRAM) and a manufacturing method thereof. The resistive random access memory includes multiple unit structures disposed on a substrate. Each of the unit structures includes a first electrode, a first metal oxide layer, and a spacer. The first electrode is disposed on the substrate. The first metal oxide layer is disposed on the first electrode. The spacer is disposed on sidewalls of the first electrode and the first metal oxide layer. In addition, the resistive random access memory includes a second metal oxide layer and a second electrode. The second metal oxide layer is disposed on the unit structures and is connected to the unit structures. The second electrode is disposed on the second metal oxide layer.

Abstract: A RRAM device includes a bottom electrode, a resistive material layer, a high work function layer, a top electrode, a hard mask and high work function sidewall parts. The bottom electrode, the resistive material layer, the high work function layer, the top electrode and the hard mask are sequentially stacked on a substrate. The high work function sidewall parts cover sidewalls of the top electrode and sidewalls of the hard mask, thereby constituting a RRAM cell. A method of forming said RRAM device is also provided.

Abstract: Provided is a resistive random-access memory device, including a dielectric layer located on a substrate, a first electrode which is a column located on the dielectric layer, a second electrode covering a top surface and a sidewall of the first electrode, and a variable resistance layer sandwiched between the top surface of the first electrode and the second electrode and between the sidewall of the first electrode and the second electrode and located between the second electrode and the dielectric layer.

Abstract: A resistive random access memory structure includes a first inter-layer dielectric layer; a bottom electrode disposed in the first inter-layer dielectric layer; a capping layer disposed on the bottom electrode and on the first inter-layer dielectric layer; and a through hole disposed in the capping layer. The through hole partially exposes a top surface of the bottom electrode. A variable resistance layer is disposed within the through hole. A top electrode is disposed within the through hole and on the variable resistance layer. A second inter-layer dielectric layer covers the top electrode and the capping layer.

Abstract: Provided is a resistive memory structure and a manufacturing method thereof. The resistive memory structure includes a substrate, a dielectric layer, a resistive memory device, a hard mask layer, and a spacer. The dielectric layer is located on the substrate. The dielectric layer has an opening. The resistive memory device is located in the opening and has a protrusion outside the opening. The resistive memory device includes a first electrode, a variable resistance layer, and a second electrode. The variable resistance layer is located on the first electrode. The second electrode is located on the variable resistance layer. The hard mask layer covers a top surface of the variable resistance layer. The spacer covers a sidewall of the variable resistance layer in the protrusion.