Abstract: An organic interposer includes interconnect-level dielectric material layers embedding redistribution interconnect structures, at least one dielectric capping layer overlying a topmost interconnect-level dielectric material layer, a bonding-level dielectric layer overlying the at least one dielectric capping layer, and a dual-layer inductor structure, which may include a lower conductive coil embedded within the topmost interconnect-level dielectric material layer, a conductive via structure vertically extending through the at least one dielectric capping layer, and an upper conductive coil embedded within the bonding-level dielectric layer and comprising copper.

Abstract: The present disclosure relates to an image sensor having a photodiode surrounded by a back-side deep trench isolation (BDTI) structure, and an associated method of formation. In some embodiments, a plurality of pixel regions is disposed within an image sensing die and respectively comprises a photodiode configured to convert radiation into an electrical signal. The photodiode comprises a photodiode doping column with a first doping type surrounded by a photodiode doping layer with a second doping type that is different than the first doping type. A BDTI structure is disposed between adjacent pixel regions and extending from the back-side of the image sensor die to a position within the photodiode doping layer. The BDTI structure comprises a doped liner with the second doping type and a dielectric fill layer. The doped liner lines a sidewall surface of the dielectric fill layer.

Abstract: An organic interposer includes interconnect-level dielectric material layers embedding redistribution interconnect structures, at least one dielectric capping layer overlying a topmost interconnect-level dielectric material layer, a bonding-level dielectric layer overlying the at least one dielectric capping layer, and a dual-layer inductor structure, which may include a lower conductive coil embedded within the topmost interconnect-level dielectric material layer, a conductive via structure vertically extending through the at least one dielectric capping layer, and an upper conductive coil embedded within the bonding-level dielectric layer and comprising copper.

Abstract: A resistive random access memory structure includes a first inter-layer dielectric layer; a bottom electrode disposed in the first inter-layer dielectric layer; a capping layer disposed on the bottom electrode and on the first inter-layer dielectric layer; and a through hole disposed in the capping layer. The through hole partially exposes a top surface of the bottom electrode. A variable resistance layer is disposed within the through hole. A top electrode is disposed within the through hole and on the variable resistance layer. A second inter-layer dielectric layer covers the top electrode and the capping layer.

Abstract: A method of preventing drippage in a liquid dispensing system includes generating at least a first proxy signal representing at least a first indirect measure of a position of a first automatic control valve (ACV), wherein the first ACV has positions ranging from fully closed to fully open. The method further includes recognizing, based on at least the first proxy signal, whether a failure state exists in which the first ACV has failed to close. The method further includes causing a second ACV to close when the failure state exists, wherein the second ACV is fluidically connected to the first ACV, and the second ACV has positions ranging from fully closed to fully open.

Abstract: A resistive random access memory (RRAM) structure includes a RRAM cell, spacers and a dielectric layer. The RRAM cell is disposed on a substrate. The spacers are disposed beside the RRAM cell, wherein widths of top surfaces of the spacers are larger than or equal to widths of bottom surfaces of the spacers. The dielectric layer blanketly covers the substrate and sandwiches the RRAM cell, wherein the spacers are located in the dielectric layer. A method for forming the resistive random access memory (RRAM) structure is also provided.

Abstract: A detection element of biological subcutaneous features and a wearable device thereof are provided. The element for detecting biological subcutaneous features has a substrate, a light-detecting semiconductor chip, a grid structure, and a cover. The light-detecting semiconductor chip is located on the substrate for detecting red light or near-infrared light signals. The grid structure including a plurality of opaque light-absorbing blocking walls is located on the light-detecting semiconductor chip for blocking side light and increasing the proportion of near-vertical incident light. The cover is located on the grid structure and serves as a protection lid. The wearable device for detecting biological subcutaneous features has more than one light source of red light or near-infrared light and a plurality of detection elements. The arrangement of the opaque light-absorbing blocking walls that are parallel to each other are substantially parallel to the light-emitting directions of the light source.

Abstract: A retrofit system for the monitoring of seatbelt status in mass transit vehicles is adapted for retrofitting in different existing vehicles and includes a plurality of non-contact position sensors each associated with the buckle and tongue of a seatbelt, and a seat pan upholstery module with a seat occupancy sensor fixed to its inner side. The sensor of the non-contact position sensors is adapted to be fixed to an external surface of the buckle housing. A monitoring unit is coupled to the non-contact position sensors and occupancy sensors and to a display of seatbelt status comprising an indication that, when each of the seats is occupied, whether the respective seatbelt is in the fastened positioned or a released position.

Abstract: The invention provides a drainage network monitoring system. The system comprises a sensing module for detecting one or more conditions at a location in the drainage network; a processing module for processing data received from the sensing module; a wireless communications module for communicating the processed data substantially in real-time to one or more wireless devices including a wireless notification device configured to issue notification information to users, wherein the wireless communications module utilizes a narrow bandwidth, low power wireless communications protocol to communicate processed data to the wireless notification device, and wherein the sensing module has a standalone power supply.

Abstract: An object tracking system for use in traffic flow analytics and a traffic flow analytic method. The system comprises: an image processing module arranged to receiving a sequence of images capturing at least one object moving along a predetermined path in an area; an object detection module arranged to detect the at least one object including identifying a predetermined category of the detected object; and an object tracking module arranged to track the at least one object travelling from an entrance to an exit of the predetermined path based on coordinates of the object in the sequence of images being detected.

Abstract: A method of preventing drippage in a fluid dispensing system. The fluid dispensing system includes a first automatic control valve (ACV), an input of the first ACV connected to fluid-source of fluid, the first ACV having positions ranging from fully closed to fully open, and a second ACV, an input of the second ACV being connected to an output of the first ACV, and an output of the second ACV being connected to a nozzle, the second ACV having positions ranging from fully closed to fully open. The method includes generating a first proxy signal representing at least a first indirect measure of a position of the first ACV. The method includes recognizing, based on at least the first proxy signal that a failure state exists in which the first ACV has failed to close. The method includes causing the second ACV to close when the failure state exists.

Abstract: A resistive random access memory (RRAM) structure includes a RRAM cell, spacers and a dielectric layer. The RRAM cell is disposed on a substrate. The spacers are disposed beside the RRAM cell, wherein widths of top surfaces of the spacers are larger than or equal to widths of bottom surfaces of the spacers. The dielectric layer blanketly covers the substrate and sandwiches the RRAM cell, wherein the spacers are located in the dielectric layer. A method for forming said resistive random access memory (RRAM) structure is also provided.

Abstract: A system (100) for monitoring stability of trees (10) in an area includes a server (101), one or more sensor modules (102, 202) being attached to each of the trees (10) in a network of trees, configured for obtaining tilt angle data pertaining to inclination of at least a portion of the tree (10), and relaying the tilt angle data to the server (101), a weather observing device (103, 203) connected to the server (101), for obtaining localized environmental variables representing a local weather condition in the area, and a monitoring platform (20) connected with the server (101), configured for storing and processing the data. The system is configured for monitoring, based on the data and the environmental variables, the tilt angle data of each of the trees (10), and identifying one or more abnormalities of one or more of the trees (10), and indicating through the monitoring platform (20) the one or more abnormalities.

Abstract: A resistive random-access memory (RRAM) device, including a bottom electrode, a high work function layer, a resistive material layer and a top electrode sequentially stacked on a substrate, wherein the resistive material layer includes a bottom part and a top part, first spacers covering sidewalls of the top part and the top electrode, and second spacers covering sidewalls of the bottom part, thereby constituting a RRAM cell.

Abstract: A resistive random-access memory (RRAM) device includes a bottom electrode, a high work function layer, a resistive material layer, a top electrode and high work function spacers. The bottom electrode, the high work function layer, the resistive material layer and the top electrode are sequentially stacked on a substrate, wherein the resistive material layer includes a bottom part and a top part. The high work function spacers cover sidewalls of the bottom part, thereby constituting a RRAM cell. The present invention also provides a method of forming a RRAM device.

Abstract: Provided is a resistive random access memory (RRAM). The resistive random access memory includes a plurality of unit structures disposed on a substrate. Each of the unit structures includes a first electrode, and a first metal oxide layer. The first electrode is disposed on the substrate. The first metal oxide layer is disposed on the first electrode. In addition, the resistive random access memory includes a second electrode. The second electrode is disposed on the plurality of unit structures and connected to the plurality of unit structures.

Abstract: A resistive random access memory (RRAM) structure includes a RRAM cell, spacers and a dielectric layer. The RRAM cell is disposed on a substrate. The spacers are disposed beside the RRAM cell, wherein widths of top surfaces of the spacers are larger than or equal to widths of bottom surfaces of the spacers. The dielectric layer blanketly covers the substrate and sandwiches the RRAM cell, wherein the spacers are located in the dielectric layer. A method for forming the resistive random access memory (RRAM) structure is also provided.

Abstract: A RRAM device includes a bottom electrode, a resistive material layer, atop electrode, a hard mask and high work function sidewall parts. The bottom electrode, the resistive material layer, the top electrode and the hard mask are sequentially stacked on a substrate. The high work function sidewall parts cover sidewalls of the top electrode and sidewalls of the hard mask, thereby constituting a RRAM cell. A method of forming the RRAM device is also provided.

Abstract: An RRAM includes a bottom electrode, a resistive switching layer and a top electrode. The bottom electrode includes an inverted T-shaped profile. The resistive switching layer covers the bottom electrode. The top electrode covers the resistive switching layer. The inverted T-shaped profile includes a bottom element and a vertical element. The vertical element is disposed on the bottom element. The shape of the vertical element includes a rectangle or a trapezoid.