Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

Abstract: Smart rings and methods of manufacturing smart rings are provided. A waterproof design and method of manufacturing of a smart ring, in accordance with one implementation, includes a band having at least an outer surface and an inner surface. The inner surface of the band includes features configured to support electronic components. The waterproofing design and method of manufacturing includes a laser etching a portion of the inner surface and subsequent to the laser etching of the portion, applying an epoxy over the electronic components and over the laser etched portion of the inner surface. Prior to the laser etching, forming an edge rib on the portion of the inner surface, wherein the laser etching is subsequently on the edge rib. Furthermore, the laser etched portion includes an increased contact area for bonding with the epoxy for the waterproof design.

Abstract: A semiconductor device is disclosed herein. The semiconductor device includes a routing structure. The routing structure has an intermediate conductive routing layer. The intermediate conductive routing layer includes a first mesh conductive layer formed in a predetermined second region of the semiconductor device and a second mesh conductive layer formed in a predetermined first region of the semiconductor device. The first mesh conductive layer and the second mesh conductive layer are electrically isolated from each other. The intermediate conductive routing layer further includes multiple first conductive islands formed in the predetermined first region and multiple second conductive islands formed in the predetermined second region.

Abstract: A planar winding transformer includes a magnetic core set and a multilayer circuit board. The magnetic core set includes two magnetic cores and two magnetic columns. The two magnetic cores are parallel to each other. The multilayer circuit board is disposed between two magnetic cores, and two magnetic columns penetrate through the multilayer circuit board. The multilayer circuit board includes two low voltage winding layers and one high voltage winding layer. Two low voltage winding layers are connected to each other in parallel, and the high voltage winding layer is disposed between two low voltage winding layers. When the high voltage winding layer receives a polarity current, at least one of the low voltage winding layers generates a corresponding induced current. Two magnetic cores and two magnetic columns form a closed path for magnetic flux.

Abstract: A lens module includes a plurality of lenses, an annular body and a reflective element. The reflective element, the lenses and the annular are sequentially arranged along an optical axis from an object side to an image side. The lenses include a first lens that is disposed closest to the object side, and a second lens that is disposed closest to the image side. The reflective element is disposed between the object side and the first lens. The annular body is disposed between the object side and the first lens, between the lenses, or between the second lens and the image side. The lens module satisfies 0.5 mm<EPA/PL<5.5 mm where EPA is an area of an entrance pupil of the lens module, and PL is a length of the reflective element.

Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region, a second cell region, a third cell region, and a fourth cell region and a diffusion region on the substrate extending through the first cell region, the second cell region, the third cell region, and the fourth cell region. Preferably, the diffusion region includes a H-shape according to a top view.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: A semiconductor package assembly is provided. The semiconductor package assembly includes first semiconductor die, a second semiconductor die and a memory package. The first semiconductor die and the second semiconductor die are stacked on each other. The first semiconductor die includes a first interface and a third interface. The first interface overlaps and is electrically connected to the second interface arranged on the second semiconductor die. The third interface is arranged on a first edge of the first semiconductor die. The memory package is disposed beside the first semiconductor die, wherein the memory package is electrically connected to the first semiconductor die by the third interface.

Abstract: A semiconductor structure includes a first transistor, a second transistor, a metal rail, and a first source/drain contact and a second source/drain contact. The first transistor has a gate structure, a first source/drain feature, and a second source/drain feature. The first source/drain feature and the second source/drain feature are on opposite sides of the gate structure. The second transistor has the gate structure, a third source/drain feature directly over the first source/drain feature, and a fourth source/drain feature directly over the second source/drain feature. The metal rail extends in an X-direction and adjacent to the gate structure in a Y-direction. The first source/drain contact and the second source/drain contact each has an L-shape in a Y-Z cross-sectional view. The first source/drain contact electrically connects the first source/drain feature to the metal rail. The second source/drain contact electrically connects the fourth source/drain feature to the metal rail.

Abstract: A lens device includes a lens group unit, a guiding unit, a transmission unit and a driving unit. The guiding unit is connected to the lens group unit for guiding the lens group unit to move in a first direction or in a second direction. The transmission unit includes a fixing element. The driving unit is connected to the transmission unit so as to output power for driving the lens group unit through the transmission unit to move in the first direction X or in the second direction. The fixing element includes a body portion and a bent portion, and the bent portion extends from the body portion to form a space between the fixing element and the lens group unit.

Abstract: An anti-theft plastic bottle cap contains a body and an anti-theft ring. The body is connected on an opening of a bottle. The anti-theft ring is mounted on a bottom of the body, and multiple equidistant connection teeth are formed between the body and the anti-theft ring. The body includes a first protrusion extending to the anti-theft ring from a bottom of the body, and the anti-theft ring includes two second protrusions extending to the body. The first protrusion is engaged with the two second protrusions when the body is rotated clockwise, such that the anti-theft plastic bottle cap is not rotated overly by using the first protrusion and the two second protrusions to avoid a removal of the anti-theft ring from the body and the anti-theft ring before a user detaches the anti-theft plastic bottle cap from the bottle.

Abstract: An orientation-adjustment mechanism is provided, which is adapted to be affixed to a mounting surface. The orientation-adjustment mechanism includes a base, a rod, a joint unit, and a mounted member. The base is adapted to be affixed to the mounting surface. The rod includes a first section and a second section. The first section of the rod pivots on the base. The joint unit is disposed on the second section of the rod. The joint unit includes a plurality of joint-positioning portions. The joint-positioning portions include a first joint-positioning portion and a second joint-positioning portion. The mounted member is connected to the joint unit and is adapted to be rotated relative to the joint unit. The mounted member includes a member housing. The member housing includes at least one member-positioning portion.

Abstract: A method of forming a semiconductor device structure is provided. The method includes forming semiconductor fins at a first conductivity type region and a second conductivity type region of a substrate, forming a sacrificial gate structure across a portion of the semiconductor fins, wherein the sacrificial gate structure comprises a sacrificial gate dielectric layer and a sacrificial gate electrode layer over the sacrificial gate dielectric layer, and the sacrificial gate dielectric layer on the semiconductor fins of the first conductivity type region is asymmetrical in thickness between a top and a sidewall of the semiconductor fins. The method also includes forming a gate spacer on opposite sidewalls of the sacrificial gate structure, recessing the semiconductor fins not covered by the sacrificial gate structure and the gate spacer, forming source/drain feature on the recessed semiconductor fins, and removing the sacrificial gate structure to expose the top of the semiconductor fins.

Abstract: An orientation-adjustment mechanism is provided, which is adapted to be affixed to a mounting surface. The orientation-adjustment mechanism includes a base, a rod, a joint unit, and a mounted member. The base is adapted to be affixed to the mounting surface. The rod includes a first section and a second section. The first section of the rod pivots on the base. The joint unit is disposed on the second section of the rod. The joint unit includes a plurality of joint-positioning portions. The joint-positioning portions include a first joint-positioning portion and a second joint-positioning portion. The mounted member is connected to the joint unit and is adapted to be rotated relative to the joint unit. The mounted member includes a member housing. The member housing includes at least one member-positioning portion.

Abstract: Embodiments provide a greening module, a greening device, a greening body and a method for installing the greening module. In the embodiments, the greening device includes at least one greening module including plants, a plant culture layer, an adhering part, and a waterproof layer, wherein: one side of the plant culture layer is configured for cultivating the plants, and at least part of a surface of an other side is provided with the adhering part; the waterproof layer is provided between the plant culture layer and the adhering part.

Abstract: A communication apparatus and a bracket device thereof are provided. The bracket device includes a base, a rotary shaft, a connecting member, and an elastic member. The base includes a bottom portion, a connecting portion, and a base engaging portion. The rotary shaft is rotatably disposed in the connecting portion and includes a base wall and a connecting section. The connecting member connects to the rotary shaft. The elastic member includes a body and an elastic member engaging portion. The body connects to the base wall of the rotary shaft, and the elastic member engaging portion is positioned at the body. In an engagement state, the elastic member engaging portion is engaged to the base engaging portion.

Abstract: A lens module includes a plurality of lenses, an annular body and a reflective element. The reflective element, the lenses and the annular are sequentially arranged along an optical axis from an object side to an image side. The lenses include a first lens that is disposed closest to the object side, and a second lens that is disposed closest to the image side. The reflective element is disposed between the object side and the first lens. The annular body is disposed between the object side and the first lens, between the lenses, or between the second lens and the image side. The lens module satisfies 0.5 mm<EPA/PL<5.5 mm where EPA is an area of an entrance pupil of the lens module, and PL is a length of the reflective element.