Abstract: An antenna structure includes a ground element, a feeding radiation element, a first radiation element, a second radiation element, a shorting radiation element, a third radiation element, and a fourth radiation element. The feeding radiation element has a feeding point. The first radiation element is coupled to the feeding radiation element. The second radiation element is coupled to the feeding radiation element. The second radiation element and the first radiation element substantially extend in opposite directions. The feeding radiation element is further coupled through the shorting radiation element to the ground element. The third radiation element is coupled to the ground element. The third radiation element is adjacent to the first radiation element. The fourth radiation element is coupled to the ground element. The fourth radiation element is adjacent to the second radiation element.

Abstract: A heterogeneous integration chip of a micro fluid actuator is disclosed and includes a first substrate, a first insulation layer, a first conductive layer, a piezoelectric layer, a second conductive layer, a second substrate, a control element, a perforated trench and a conductor. The first substrate includes a first chamber. The first insulation layer is disposed on the first substrate. The first conductive layer is disposed on the first insulation layer and includes an electrode pad. The piezoelectric layer and the second conductive layer are stacked on the first conductive layer sequentially. The second substrate is assembled to the first substrate through a bonding layer to define a second chamber and includes an orifice, a fluid flowing channel and a third chamber. The control element is disposed in the second substrate. The perforated trench filled with the conductor is penetrated from the electrode pad to the second substrate.

Abstract: An antenna structure includes a ground element, a first radiation element, a second radiation element, a third radiation element, and a nonconductive support element. The first radiation element is coupled to a first grounding point on the ground element. The second radiation element has a feeding point. The second radiation element is adjacent to the first radiation element. The third radiation element is coupled to a second grounding point on the ground element. The third radiation element is adjacent to the second radiation element. The first radiation element, the second radiation element, and the third radiation element are disposed on the nonconductive support element. The second radiation element is at least partially surrounded by the first radiation element. The third radiation element is at least partially surrounded by the second radiation element.

Abstract: A metal electrode of a ceramic capacitor and a method of forming the same are provided. The method includes mixing metal powders and a barium titanate organic-precursor to obtain precursor powders; adding an adhesive to the precursor powders to obtain a metal slurry; performing a molding process to the metal slurry to obtain a film material; performing a binder burn-out process to the film material to obtain a degumming film; and performing a sintering process to the degumming film to obtain the metal electrode. By mixing specific amount of barium titanate organic-precursor with the metal powders, the barium titanate metallic organic-precursor can be transformed to barium titanate in the following process, and barium titanate can be dispersed between the metals homogeneously. Therefore, electrode continuity can be increased.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: A manufacturing method of a display device includes forming light emitting components on a first substrate, the light emitting components include a first side and a second side, and the second side is away from the first substrate; forming a circuit layer on the first substrate and on the second side of the light emitting components; forming a first protective layer on the circuit layer and forming an insulating layer on the first protective layer; removing the first substrate after forming a second substrate on the insulating layer; forming a black matrix layer on the first side of the light emitting components, and the black matrix layer includes openings; forming light conversion layers in the openings of the black matrix layer; forming a second protective layer on the black matrix layer and the light conversion layers; and forming a third substrate on the second protective layer.

Abstract: A blood pressure detection device manufactured by a semiconductor process includes a substrate, a microelectromechanical element, a gas-pressure-sensing element, a driving-chip element, an encapsulation layer and a valve layer. The substrate includes inlet apertures. The microelectromechanical element and the gas-pressure-sensing element are stacked and integrally formed on the substrate. The encapsulation layer is encapsulated and positioned on the substrate. A flowing-channel space is formed above the microelectromechanical element and the gas-pressure-sensing element. The encapsulation layer includes an outlet aperture in communication with an airbag. The driving-chip element controls the microelectromechanical element, the gas-pressure-sensing element and valve units to transport gas.

Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a gate structure disposed on the substrate. The semiconductor device also includes a source region and a drain region disposed within the substrate. The substrate includes a drift region laterally extending between the source region and the drain region. The semiconductor device further includes a first stressor layer disposed over the drift region of the substrate. The first stressor layer is configured to apply a first stress to the drift region of the substrate. In addition, the semiconductor device includes a second stressor layer disposed on the first stressor layer. The second stressor layer is configured to apply a second stress to the drift region of the substrate, and the first stress is opposite to the second stress.

Abstract: A vandal-proof rack structure for a surveillance monitor is disclosed, which comprises: a frame, having a first gear positioned at a specific location thereof and being used for receiving the surveillance monitor; a first axial seat, having a second gear and a third gear arranged thereat while enabling the second gear to mesh with the first gear and thus enabling the frame to pitch vertically with respect to the first axial seat; and a second axial seat, having a fourth gear arranged thereon while enabling the fourth gear to mesh with the third gear and thus enabling the first axial seat to yaw horizontally with respect to the second axial seat.