Patents by Inventor Chun-Jen HSIAO

Chun-Jen HSIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma ashing method using residue gas analyzer
    Patent number: 11654461
    Abstract: A plasma ashing method is provided. The plasma ashing method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The plasma ashing method further includes selecting one of the tested recipes as a process recipe for a plasma ash process.
    Type: Grant
    Filed: May 21, 2021
    Date of Patent: May 23, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Jen Hsiao, Ya-Ping Chen, Chien-Hung Lin, Wen-Pin Liu, Chin-Wen Chen
  • PLASMA ASHING METHOD USING RESIDUE GAS ANALYZER
    Publication number: 20210268555
    Abstract: A plasma ashing method is provided. The plasma ashing method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The plasma ashing method further includes selecting one of the tested recipes as a process recipe for a plasma ash process.
    Type: Application
    Filed: May 21, 2021
    Publication date: September 2, 2021
    Inventors: Chun-Jen HSIAO, Ya-Ping CHEN, Chien-Hung LIN, Wen-Pin LIU, Chin-Wen CHEN
  • Photoresist removal method using residue gas analyzer
    Patent number: 11020778
    Abstract: A photoresist removal method is provided. The photoresist removal method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The photoresist removal method further includes selecting one of the tested recipes as a process recipe based on the analysis results from the residue gas analyzer and at least one expected performance criterion. In addition, the photoresist removal method includes performing a plasma ash process on a semiconductor substrate according to the process recipe to remove a photoresist layer from the semiconductor substrate.
    Type: Grant
    Filed: July 4, 2019
    Date of Patent: June 1, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Jen Hsiao, Ya-Ping Chen, Chien-Hung Lin, Wen-Pin Liu, Chin-Wen Chen
  • PHOTORESIST REMOVAL METHOD USING RESIDUE GAS ANALYZER
    Publication number: 20200016635
    Abstract: A photoresist removal method is provided. The photoresist removal method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The photoresist removal method further includes selecting one of the tested recipes as a process recipe based on the analysis results from the residue gas analyzer and at least one expected performance criterion. In addition, the photoresist removal method includes performing a plasma ash process on a semiconductor substrate according to the process recipe to remove a photoresist layer from the semiconductor substrate.
    Type: Application
    Filed: July 4, 2019
    Publication date: January 16, 2020
    Inventors: Chun-Jen HSIAO, Ya-Ping CHEN, Chien-Hung LIN, Wen-Pin LIU, Chin-Wen CHEN