Abstract: A method for forming an isolation structure includes: forming a trench at a surface of a substrate; forming a mask pattern on the substrate, wherein the mask pattern has an opening communicated with the trench; filling a first isolation material layer in the opening and the trench, wherein a surface of the first isolation material layer defines a first recess; filling a second isolation material layer into the first recess; partially removing the first and second isolation material layers, to form a second recess, performing first and second oblique ion implantation processes, to form damage regions in the first isolation material layer; performing a decoupled plasma treatment, to transform portions of the damage regions into a protection layer having etching selectivity with respect to the damage regions; and removing the damage regions.

Abstract: A thermoplastic vuicanizate material comprises: a continuous phase comprising polyester, wherein a melting point of the polyester is less than or equal to 180° C., a dispersant phase comprising cross-linked rubber, wherein an average particle diameter of the cross-linked rubber is less than or equal to 100 ?m.