Abstract: An exposure device and method for semiconductor manufacturing, focusing on the creation of exposure patterns with High Dynamic Range (HDR) capabilities, is disclosed. The exposure device includes a laser source, a first spatial light modulator (SLM), specifically a Liquid Crystal on Silicon (LCOS) device, and a second SLM, specifically a Digital Micromirror Device (DMD). The LCOS is positioned upstream in the optical path and is optimized for modulating the phase of the laser. It also directs the laser light towards specific areas on the DMD, crucial for enhancing detail and contrast in exposure patterns. The DMD, placed downstream, is composed of micromirrors that modulate the amplitude of the reflected laser, essential for achieving HDR in exposure patterns. This cooperative interaction between the LCOS and DMD allows for the creation of exposure patterns with a wide range of light intensities, from very bright to very dark, thereby achieving high dynamic range.

Abstract: A method and system for effectively removing particles from semiconductor surfaces using a multi-beam laser-based approach. The invention employs a plurality of laser beams generated by a spatial light modulator, which create multiple light spots on a particle at various locations across its surface. By adjusting the phase of these laser beams, alternating clockwise and counterclockwise torsional forces are induced, generating rotational movement that weakens the adhesion between the particles and the semiconductor surface. The system utilizes a liquid crystal spatial light modulator to precisely control beam parameters, enhancing the ability to reduce adhesion forces due to van der Waals interactions or electrostatic forces. An automated optical inspection system provides real-time monitoring and feedback, ensuring precise manipulation and complete removal of particles.

Abstract: A method for cleaning semiconductor process equipment and a system thereof are provided. The method is adapted to apply to an object with at least one pollutant thereon and includes steps of providing multi-channel optical tweezers to irradiate the pollutant and locations where the pollutant is neighbor to, in order to let the optical tweezers generate a resultant force to the pollutant; and providing an airflow to the object. The resultant force is greater than a maximum static friction between the pollutant and the object so as to remove the pollutant.

Abstract: An exposure device and method for semiconductor manufacturing, focusing on the creation of exposure patterns with High Dynamic Range (HDR) capabilities, is disclosed. The exposure device includes a laser source, a first spatial light modulator (SLM), specifically a Liquid Crystal on Silicon (LCOS) device, and a second SLM, specifically a Digital Micromirror Device (DMD). The LCOS is positioned upstream in the optical path and is optimized for modulating the phase of the laser. It also directs the laser light towards specific areas on the DMD, crucial for enhancing detail and contrast in exposure patterns. The DMD, placed downstream, is composed of micromirrors that modulate the amplitude of the reflected laser, essential for achieving HDR in exposure patterns. This cooperative interaction between the LCOS and DMD allows for the creation of exposure patterns with a wide range of light intensities, from very bright to very dark, thereby achieving high dynamic range.

Abstract: The present disclosure pertains to a photomask cleaning device suitable for cleaning a photomask. The interior of the photomask cleaning device is equipped with a cleaning area and a photomask flipping area. The photomask has a first surface and a second surface, with a pattern and a photomask protective film set on the first surface. The photomask protective film covers the pattern. The photomask cleaning device includes a photomask flipping mechanism, a transport mechanism, and at least one cleaning mechanism. The photomask flipping mechanism is located within the photomask flipping area and is configured to flip the photomask. Additionally, the transport mechanism is used to transport the photomask, enabling the photomask to move between the photomask flipping area and the cleaning area. The cleaning mechanism is located within the cleaning area and is used to clean the photomask.

Abstract: An exposure device includes a laser source, a first spatial light modulator, a second spatial light modulator and a controller. The laser source is provided for emitting a laser. The first spatial light modulator is irradiated by the laser and used for modulating the phase of the laser irradiated on the first spatial light modulator before reflecting the laser. The second spatial light modulator is irradiated by the laser reflected from the first spatial light modulator and used for modulating the amplitude of the laser irradiated on the second spatial light modulator before reflecting the laser. The laser reflected by the second spatial light modulator is irradiated on a photoresist layer to form an exposure pattern.

Abstract: A method for cleaning semiconductor process equipment and a system thereof are provided. The method is adapted to apply to an object with at least one pollutant thereon and includes steps of providing multi-channel optical tweezers to irradiate the pollutant and locations where the pollutant is neighbor to, in order to let the optical tweezers generate a resultant force to the pollutant; and providing an airflow to the object. The resultant force is greater than a maximum static friction between the pollutant and the object so as to remove the pollutant.

Abstract: The present disclosure provides a laser cutting method comprising steps of: (a) emitting a laser light to a spatial light modulator that has a plurality of pixels; (b) the laser light modulated by the spatial light modulator being irradiated on an uncut object, which is to be cut, for forming a focal point and cutting the uncut object; (c) measuring a cutting depth of the object; (d) the spatial light modulator converting a phase of each of the laser light modulated by each of the pixels to change a light pattern distribution at the focal point when the cutting depth of the object reaches a first predetermined depth; and (e) repeating the step (b) to the step (d) until the cutting depth of the object reaches a second predetermined depth; wherein the first predetermined depth is varied when the step (b) to the step (d) are repeated.

Abstract: An exposure device includes a laser source, a first spatial light modulator, a second spatial light modulator and a controller. The laser source is provided for emitting a laser. The first spatial light modulator is irradiated by the laser and used for modulating the phase of the laser irradiated on the first spatial light modulator before reflecting the laser. The second spatial light modulator is irradiated by the laser reflected from the first spatial light modulator and used for modulating the amplitude of the laser irradiated on the second spatial light modulator before reflecting the laser. The laser reflected by the second spatial light modulator is irradiated on a photoresist layer to form an exposure pattern.

Abstract: A control circuit applied in a specific element and including a first transistor and an electrostatic discharge (ESD) protection circuit is provided. The specific element has a III-V semiconductor material and includes a control electrode, a first electrode and a second electrode. The first transistor is coupled between the first electrode and the second electrode and has the III-V semiconductor material. The ESD protection circuit is coupled to the control electrode, the first transistor and the second electrode. In response to an ESD event, the ESD protection circuit provides a discharge path to release the ESD current from the control electrode to the second electrode.

Abstract: A semiconductor device including a substrate, a seed layer, a buffer layer, a channel layer, a barrier layer, a gate structure, a first source/drain structure, a second source/drain structure, and a contact is provided. The seed layer is disposed on the substrate. The buffer layer is disposed on the seed layer. The channel layer is disposed on the buffer layer. The barrier layer is disposed on the channel layer. The gate structure is disposed on the barrier layer. The first and second source/drain structures are disposed on opposite sides of the gate structure. The contact contacts the first source/drain structure. The distance between the gate structure and the contact is between 0.5 micrometers and 30 micrometers.

Abstract: An electrostatic discharge protection device including a substrate, a first PNP element, a second PNP element, and an isolation region is provided. The substrate has a P-type conductivity. The first and second PNP elements are formed in the substrate. The isolation region isolates the first and second PNP elements.

Abstract: A semiconductor device including a substrate, a seed layer, a buffer layer, a channel layer, a barrier layer, a gate structure, a first source/drain structure, a second source/drain structure, and a contact is provided. The seed layer is disposed on the substrate. The buffer layer is disposed on the seed layer. The channel layer is disposed on the buffer layer. The barrier layer is disposed on the channel layer. The gate structure is disposed on the barrier layer. The first and second source/drain structures are disposed on opposite sides of the gate structure. The contact contacts the first source/drain structure. The distance between the gate structure and the contact is between 0.5 micrometers and 30 micrometers.

Abstract: An electrostatic discharge protection device including a substrate, a first PNP element, a second PNP element, and an isolation region is provided. The substrate has a P-type conductivity. The first and second PNP elements are formed in the substrate. The isolation region isolates the first and second PNP elements.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first well region that has first conductive type therein. The semiconductor device structure also includes a first doped region embedded in the first well region, and having a second conductive type that is different from the first conductive type. The semiconductor device structure further includes a second well region that has the second conductive type. In addition, the semiconductor device structure includes a first metal electrode disposed on the first doped region of the semiconductor substrate and a second metal electrode disposed on the second well region of the semiconductor substrate.

Abstract: A control circuit applied in a specific element and including a first transistor and an electrostatic discharge (ESD) protection circuit is provided. The specific element has a III-V semiconductor material and includes a control electrode, a first electrode and a second electrode. The first transistor is coupled between the first electrode and the second electrode and has the III-V semiconductor material. The ESD protection circuit is coupled to the control electrode, the first transistor and the second electrode. In response to an ESD event, the ESD protection circuit provides a discharge path to release the ESD current from the control electrode to the second electrode.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first well region that has first conductive type therein. The semiconductor device structure also includes a first doped region embedded in the first well region, and having a second conductive type that is different from the first conductive type. The semiconductor device structure further includes a second well region that has the second conductive type. In addition, the semiconductor device structure includes a first metal electrode disposed on the first doped region of the semiconductor substrate and a second metal electrode disposed on the second well region of the semiconductor substrate.

Abstract: A wireless data transferring system for a lavatory comprises a host having a decoder to decode a data from a data source, a tuner coupled to the data source to select a desired data, a first WLAN module coupled to the decoder or the data source to transfer data; and at least one sanitary equipment coupled to a receiver, wherein the receiver is coupled to the first WLAN module, and a data output coupled to the receiver to output the data.

Abstract: In a ratchet wrench structure, a fitting sleeve of a sleeve type ratchet wrench is provided with a retaining ball. An elastically movable drive ring is provided externally of the fitting sleeve to control movement of the retaining ball such that an extension sleeve can be quickly assembled to or disengaged from the fitting sleeve. The ratchet wrench thus can adapt to various working environments and can be operated single-handedly to assemble or disengage the extension sleeve and to lock and position the same.