Abstract: A method for forming a high electron mobility transistor is disclosed. A mesa structure having a channel layer and a barrier layer is formed on a substrate. The mesa structure has two first edges extending along a first direction and two second edges extending along a second direction. A passivation layer is formed on the substrate and the mesa structure. A first opening and a plurality of second openings connected to a bottom surface of the first opening are formed and through the passivation layer, the barrier layer and a portion of the channel layer. In a top view, the first opening exposes the two first edges of the mesa structure without exposing the two second edges of the mesa structure. A metal layer is formed in the first opening and the second openings thereby forming a contact structure.

Abstract: A polyethylene terephthalate composite material containing glass fiber and a method for manufacturing the same are provided. The polyethylene terephthalate composite material includes 40 to 65.5 parts by weight of polyethylene terephthalate, 5 to 40 parts by weight of the glass fiber, and 0.15 to 2.5 parts by weight of a crystallizing agent. The crystallizing agent includes an inorganic crystallizing agent and an organic crystallizing agent, and an added amount of the inorganic crystallizing agent is less than an added amount of the organic crystallizing agent.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.

Abstract: An enhancement mode high electron mobility transistor (HEMT) includes a group III-V semiconductor body, a group III-V barrier layer and a gate structure. The group III-V barrier layer is disposed on the group III-V semiconductor body, and the gate structure is a stacked structure disposed on the group III-V barrier layer. The gate structure includes a gate dielectric and a group III-V gate layer disposed on the gate dielectric, and the thickness of the gate dielectric is between 15 nm to 25 nm.

Abstract: An electronic device includes a metal back cover, a metal frame, and a first, second, third, and fourth radiators. The metal frame includes a discrete part and two connection parts. The connection parts are located by two sides of the discrete part, separated from the discrete part, and connected to the metal back cover. A U-shaped slot is formed between the discrete part and the metal back cover and between the discrete part and the connection parts. The first radiator is separated from the discrete part and includes a feed end. The second, third, and fourth radiators are connected to the discrete part and the metal back cover. The third radiator is located between the first and second radiators. The first radiator is located between the third and fourth radiators. The discrete part and the first, second, third, and fourth radiators form an antenna module together.

Abstract: A touch pad includes a bottom substrate formed of plastic material; a second conduction layer adhered to the bottom substrate; a plurality of spaced pressing structures formed on the second conduction layer and each comprising a sensing layer adhered to the second conduction layer, a contact layer formed of flexible resistive or piezoelectric material and adhered to the sensing layer, and a connection layer adhered to the contact layer; a first conduction layer adhered to the pressing structures; and a top substrate formed of plastic material and adhered to the first conduction layer.

Abstract: A touchpad keyboard includes a microprocessor; a touchpad module comprising a flexible, rectangular, optically transmissive touchpad and a touchpad controller electrically interconnecting the touchpad and the microprocessor; and an electronic paper (e-paper) display module comprising a flexible, rectangular e-paper display disposed under the touchpad, and an e-paper display controller electrically interconnecting the e-paper display and the microprocessor. The e-paper display includes a plurality of selection keys, each selection key being adapted to cause the microprocessor to access one of a plurality of keyboard layout pages to display on the e-paper display in response to pressing thereon.

Abstract: A third back-up light for vehicles is disclosed. A back-up indicating light of the present invention is disposed on corners or lateral area of a rear lamp set, and works synchronously with the original back-up light so as to enhance insufficient warning effect of the original back-up light of the rear lamp set as well as increase visible angle or warning area of the back-up light. Moreover, the third back-up light is integrated with the rear lamp set without influence on original function of the rear lamp set. Thus the assembling of the present invention is finished at the same time with the assembling of the rear lamp set so as to become a general specification for the rear lamp set. Furthermore, the third back up light can emit white light, light with other colors, or blinking light, all achieve the warning effect.

Abstract: An auxiliary lamp of a side view mirror 1 includes a light providing backup illumination on inner side and a multidirectional turn-signal lamp on outer side thereof, both on bottom area thereof. The multidirectional turn-signal lamp indicates three directions of turns-front side, rear side and lateral side. The light providing backup illumination only works when the car lights and the reversing lamps acts synchronously so that the light illuminates the rear wheels while revering at night. And the multi-directional turn-signal lamp works synchronously with original car turn-signal lamps so as to make the side view mirror has function of front-side, lateral-side and rear-side indications. Therefore, the safety and convenience of vehicles while turning at night are improved. The performance and the added value are also increased.