Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: A nucleic acid detection device includes tube holders, an illumination module, a detection module and a driving module. The tube holders accommodates tubes, each containing a reagent and a magnetizable element. The illumination module includes light sources, a magnet and a casing, and the light sources and the magnet are installed on the casing. The driving module includes a motor, a lead screw and a slider. The lead screw is coupled to the motor and driven by the motor to rotate, and the slider is sleeved on the lead screw and has a reciprocating linear motion in response to a rotation of the lead screw. The illumination module is coupled to and moved together with the slider, so that the light sources and the magnet are synchronously driven by the motor and have reciprocating linear motions in a direction parallel to the lead screw.

Abstract: A method for fabricating a semiconductor device includes first providing a substrate having a high-voltage (HV) region, a medium-voltage (MV) region, and a low-voltage (LV) region, forming a HV device on the HV region, and forming a LV device on the LV region. Preferably, the HV device includes a first base on the substrate, a first gate dielectric layer on the first base, and a first gate electrode on the first gate dielectric layer. The LV device includes a fin-shaped structure on the substrate, and a second gate electrode on the fin-shaped structure, in which a top surface of the first gate dielectric layer is even with a top surface of the fin-shaped structure.

Abstract: A method includes forming a metal-containing hard mask layer over a dielectric layer, wherein the metal-containing hard mask layer has a Young's modulus greater than about 400 MPa and a tensile stress greater than about 600 MPa, patterning the metal-containing hard mask layer to form an opening in the metal-containing hard mask layer, and etching the dielectric layer using the metal-containing hard mask layer as an etching mask. The opening extends into the dielectric layer. The opening is filled with a conductive material to form a conductive feature. The metal-containing hard mask layer is then removed.

Abstract: A display may include an array of pixels such as light-emitting diode pixels. The pixels may include multiple circuitry decks that each include one or more circuit components such as transistors, capacitors, and/or resistors. The circuitry decks may be vertically stacked. Each circuitry deck may include a planarization layer formed from a siloxane material that conforms to underlying components and provides a planar upper surface. In this way, circuitry components may be vertically stacked to mitigate the size of each pixel footprint. The circuitry components may include capacitors that include both a high-k dielectric layer and a low-k dielectric layer. The display pixel may include a via with a width of less than 1 micron.

Abstract: An automated molecular operating system includes at least one centrifuge tube carrying module, a transport module, a plurality of temperature control modules, a capping module, a magnetic field module and an automated processing module. The automated processing module is electrically connected to the transport module, the temperature control modules, the capping module and the magnetic field module, and controls the transport module to move the centrifuge tube carrying module, so that a centrifuge tube contained in the centrifuge tube carrying module makes a reaction in the temperature control modules, and the magnetic field module or the capping module is provided to the centrifuge tube according to requirements, such that a specimen in the centrifuge tube can be automatically subjected to nucleic acid extraction, nucleic acid amplification, primer labeling, reverse transcription or a combination thereof, thereby reducing manual operation errors and increasing the ease of operation.

Abstract: An antenna structure is disposed on a metal unit and includes a first slot, a second slot, a grounding portion and a short-circuiting portion. The first slot is formed on the metal unit along an axis direction and configured to receive a signal feed. The second slot is formed on the metal unit along the axis direction and separated from the first slot by a distance along the axis direction. The grounding portion is coupled to the metal unit. The short-circuiting portion crosses the second slot and is coupled to the grounding portion.

Abstract: The present invention provides a polyimide-based copolymer and electronic component and field effect transistor comprising the same. The polyimide-based copolymer comprises a copolymer of dianhydride and heterocyclic diamine, wherein the heterocyclic diamine has two benzene rings, and there are two ether bonds, two thioether bonds, or one ether bond and one thioether bond between the two benzene rings. The novel polyimide-based copolymer of the invention has excellent thermal-mechanical stability, has potential application prospects, and can be used as a substrate for flexible electronics.

Abstract: A calibration method for machine tools comprises: providing a workpiece on a machine tool; rotating the workpiece around a first rotation axis parallel to a main shaft of the machine tool and processing the workpiece by a first machining mode; measuring a first dimensional error of a shape of the workpiece along directions of first and second linear axes perpendicular to the first rotation axis; calculating a positional error of the first rotation axis according to the first dimensional error; rotating the workpiece around a second rotation axis perpendicular to the main shaft and processing the workpiece by a different second machining mode; measuring a second dimensional error of the shape of the workpiece along a direction of a third linear axis perpendicular to the second rotation axis; calculating a positional error of the second rotation axis according to the second dimensional error.

Abstract: A method of forming an integrated circuit structure includes forming a patterned passivation layer over a metal pad, with a top surface of the metal pad revealed through a first opening in the patterned passivation layer, and applying a polymer layer over the patterned passivation layer. The polymer layer is substantially free from N-Methyl-2-pyrrolidone (NMP), and comprises aliphatic amide as a solvent. The method further includes performing a light-exposure process on the polymer layer, performing a development process on the polymer layer to form a second opening in the polymer layer, wherein the top surface of the metal pad is revealed to the second opening, baking the polymer, and forming a conductive region having a via portion extending into the second opening.

Abstract: A method for processing a curved plastic panel is to first form a hard coating layer, an optical function layer, and a printing layer on a flat plastic substrate, and then cut it into a predetermined shape, and then use a hot pressing and curving device to perform a hot pressing and curving process to the flat plastic substrate in order to make it becoming a curved plastic substrate. The hot pressing and curving device can simultaneously perform hot pressing during the heating process, and has the functions of real-time monitoring of the local temperature and the local curvature forming state, and then feedback to the local heating and curvature forming mechanism for adjustments. The monitoring of temperature and curvature can be divided into multiple stages, which can be monitored stage by stage and adjusted for heating or curvature forming to improve production yield.

Abstract: A semiconductor device is disclosed. The device includes a source/drain feature formed over a substrate. A dielectric layer formed over the source/drain feature. A contact trench formed through the dielectric layer to expose the source/drain feature. A titanium nitride (TiN) layer deposited in the contact trench and a cobalt layer deposited over the TiN layer in the contact trench.

Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: A MEMS structure is provided. The MEMS structure includes a substrate and a backplate, the substrate has an opening portion, and the backplate is disposed on one side of the substrate and has acoustic holes. The MEMS structure also includes a diaphragm disposed between the substrate and the backplate, and the diaphragm extends across the opening portion of the substrate and includes outer ventilation holes and inner ventilation holes arranged in a concentric manner. The outer ventilation holes and the inner ventilation holes are relatively arranged in a ring shape and surround the center of the diaphragm. The MEMS structure further includes a pillar disposed between the backplate and the diaphragm. The pillar prevents the diaphragm from being electrically connected to the backplate.

Abstract: The present application provides an optical device and a method of fabricating the same. The optical device include a semiconductor stack structure, an anti-reflective film and a highly-reflective film. The semiconductor stack structure is configured to generate a laser beam and emit the laser beam from its front facet while receiving an electric current. The anti-reflective film is disposed on the front facet of the semiconductor stack structure and configured to increase the transmittance (reduce a reflectivity) of the front facet to the laser beam. The highly-reflective film is disposed on a rear facet of the semiconductor stack structure and is configured to reduce a loss (increase a reflectivity) of the laser beam transmitted to the rear facet. The anti-reflective film and the highly-reflective film respectively have refractive indices greater than 2, and the highly-reflective film has a thickness greater than that of the anti-reflective film.

Abstract: In one exemplary aspect, the present disclosure is directed to a method for lithography patterning. The method includes providing a substrate and forming a target layer over the substrate. A patterning layer is formed by depositing a first layer having an organic composition; depositing a second layer including over 50 atomic percent of silicon; and depositing a photosensitive layer on the second layer. In some implementations, the second layer is deposited by ALD, CVD, or PVD processes.

Abstract: A MEMS structure is provided. The MEMS structure includes a substrate having an opening portion and a backplate disposed on one side of the substrate. The MEMS structure also includes a diaphragm disposed between the substrate and the backplate. The opening portion of the substrate is under the diaphragm, and an air gap is formed between the diaphragm and the backplate. The MEMS structure further includes a pillar structure connected with the backplate and the diaphragm and a protection post structure extending from the backplate into the air gap. From a top view of the backplate, the protection post structure surrounds the pillar structure.

Abstract: A method includes forming a metal-containing hard mask layer over a dielectric layer, wherein the metal-containing hard mask layer has a Young's modulus greater than about 400 MPa and a tensile stress greater than about 600 MPa, patterning the metal-containing hard mask layer to form an opening in the metal-containing hard mask layer, and etching the dielectric layer using the metal-containing hard mask layer as an etching mask. The opening extends into the dielectric layer. The opening is filled with a conductive material to form a conductive feature. The metal-containing hard mask layer is then removed.

Abstract: A damper device and an electronic apparatus are provided. The damper device includes a first holder, a first damper component and a first gel. The first damper component includes a first protrusion part and a first bar part. The first protrusion part includes a first surface. The first bar part includes a first free end and a first fixed end. The first protrusion part is fixed on the first free end, the first fixed end is fixed on the first holder and the first surface protrudes outward from the first free end. The first free end and the first protrusion part are inserted into the first gel, and the first gel moves along the radial direction of the first bar part relative to the first bar part.

Abstract: A method includes depositing a first dielectric layer over a first conductive feature, depositing a first mask layer over the first dielectric layer, and depositing a second mask layer over the first mask layer. A first opening is patterned in the first mask layer and the second mask layer, the first opening having a first width. A second opening is patterned in a bottom surface of the first opening, the second opening extending into the first dielectric layer, the second opening having a second width. The second width is less than the first width. The first opening is extended into the first dielectric layer and the second opening is extended through the first dielectric layer to expose a top surface of the first conductive feature.