Patents by Inventor Chun-Kai Peng

Chun-Kai Peng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170340079
    Abstract: A receiving device includes a casing, a guiding member, a rotation member, a key, and a pushrod. The casing includes a baseboard, a first side plate, a second side plate, and a receiving member. The guiding member is received in the receiving member and defines a receiving groove. The rotation member rotatably covers the receiving groove and defines a bump element. The bump element is mounted on the first side plate through a first spring. The key is movably arranged in the casing. The pushrod includes a first end, a second end, and a spindle. The key is driven by an external force to drive the pushrod to rotate about the spindle, and the pushrod drives the rotation member to rotate until the receiving groove is no longer covered, thus the receiving groove is opened.
    Type: Application
    Filed: May 26, 2017
    Publication date: November 30, 2017
    Inventors: XIN YANG, CHIA-JUI HU, HAO-YUAN HUANG, YEN-YU CHEN, CHUN-KAI PENG
  • Publication number: 20060110842
    Abstract: The disclosure relates to a method and apparatus for preventing extrusion or spiking of a metal atom from a metallization layer to other layers of a silicon wafer. In one embodiment, the method includes forming a silicon-on-ship device with a MEMS component on the substrate. The MEMS component may include one or more metal or metallic alloys. To prevent spiking from the MEMS component, the sides thereof can be coated with one ore more spacer or barrier layers. In one embodiment, oxygen plasma and thermal oxidation methods are used to deposit spacers. In another embodiment, an oxide layer is deposited over the wafer, covering the substrate and the MEMS component. Selective etching or anisotropic etching can be used to remove the oxide layer from certain regions of the MEMS and the substrate while covering the sidewalls. An amorphous silicon layer can then be deposited to cover the MEMS device.
    Type: Application
    Filed: November 23, 2004
    Publication date: May 25, 2006
    Inventors: Yuh-Hwa Chang, Fei-Yun Chen, Jiann-Tyng Tzeng, Cheng-Yu Chu, Chun-Kai Peng, Chih-Chieh Yeh, Chih-Heng Po, Dah-Chuen Ho