Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: A method for forming a semiconductor device is provided. The method includes forming a plurality of first channel nanostructures and a plurality of second channel nanostructures in an n-type device region and a p-type device region of a substrate, respectively, and sequentially depositing a gate dielectric layer, an n-type work function metal layer, and a cap layer surrounding each of the first and second channel nanostructures. The cap layer merges in first spaces between adjacent first channel nanostructures and merges in second spaces between adjacent second channel nanostructures. The method further includes selectively removing the cap layer and the n-type work function metal layer in the p-type device region, and depositing a p-type work function metal layer over the cap layer in the n-type device region and the gate dielectric layer in the p-type device region. The p-type work function metal layer merges in the second spaces.

Abstract: A color wheel phase detection method and a projector using the same are provided. Firstly, a projector, including a light source, a color wheel, a motor, an indication signal generator and a controller, is provided, wherein the motor drive having n pairs of magnetic polarities drives the color wheel, including n color block groups of the same kind, to rotate, wherein n is a positive integer ?1. Then, the color wheel is driven to rotate by the motor. Then, a light is projected on the n color block groups by the light source. Then, a phase signal having 2n zero-crossing points is generated by the motor. Then, an indication signal including n pulses corresponding to n zero-crossing points is generated by the indication signal generator according to the 2n zero-crossing points. Then, the phase of the color wheel is detected by the controller according to the indication signal.

Abstract: A color wheel phase detection method and a projector using the same are provided. Firstly, a projector, including a light source, a color wheel, a motor, an indication signal generator and a controller, is provided, wherein the motor drive having n pairs of magnetic polarities drives the color wheel, including n color block groups of the same kind, to rotate, wherein n is a positive integer ?1. Then, the color wheel is driven to rotate by the motor. Then, a light is projected on the n color block groups by the light source. Then, a phase signal having 2n zero-crossing points is generated by the motor. Then, an indication signal including n pulses corresponding to n zero-crossing points is generated by the indication signal generator according to the 2n zero-crossing points. Then, the phase of the color wheel is detected by the controller according to the indication signal.

Abstract: A coordinate sensing system includes a magnetic member, a direction sensor, a first magnetic sensor and a processor, wherein the processor communicates with the direction sensor and is electrically connected to the first magnetic sensor. The magnetic member has a magnetic dipole moment. The direction sensor is used for sensing a direction of the magnetic dipole moment. The first magnetic sensor is used for sensing a first magnetic field of the magnetic member. The processor is used for calculating a first distance between the magnetic member and the first magnetic sensor and calculating a direction of the first distance according to a value of the magnetic dipole moment, the direction of the magnetic dipole moment and the first magnetic field. The processor is further used for calculating a coordinate of the magnetic member according to the first distance and the direction of the first distance.

Abstract: A vacuum laser constant temperature device is adopted for a housing that has a heat dissipation module arranged therein. The device has a metallic partition adjacent to the heat dissipation module to enclose a airtight vacancy formed with the housing, a thermoelectric cooling chip with a heating portion connecting to a side of the metallic partition and a cooling portion, a semiconductor laser lighting module arranged in the airtight vacancy and connecting to the cooling portion of the thermoelectric cooling chip, and a heat insulation layer arranged both on an opposite side of the metallic partition and in the airtight vacancy. Heat generated by the semiconductor laser lighting module can be transferred to the heat dissipation module via the thermoelectric cooling chip and the metallic partition. The thermoelectric cooling chip makes an output power of the semiconductor laser lighting module keep constant within various environments without the condensation thereon.

Abstract: A money checking apparatus has a U-shaped with having a cavity with a receiving space for receiving an object to be tested, an LCD monitor arranged atop the cavity for viewing a status of the object, and a first switch and a second switch being placed beside the receiving space and operated to turn on/off at least one infrared lamp and ultraviolet lamp. A CMOS sensor is arranged on an inner face beside the cavity and connected to the second switch and the LCD monitor, the CMOS sensor fetching the image reflected from the optical object and displaying the image on the LCD monitor. A processor is arranged in the base and connected to a power supply, the receiver, the first switch and the second switch. The money checking apparatus can be used to examine US dollars, euro bills, Chinese RMB bills and credit cards.

Abstract: A heat dissipation module is used for a high-power semiconductor laser device with an operation current below 2 amperes and has a housing, a plurality of air holes in side panels of the housing, an air outlet on a rear panel of the housing, and a heat dissipation module in the housing. The heat dissipation module has a heat-dissipating plate and a base placed beside the heat-dissipating plate. The base has a plurality of holes corresponding to a current controller, the current controller is arranged on one face of the heat-dissipating plate and near the air outlet, and the current controller has pins connected to holes on the base through insulating unit and wire. Therefore, the high-power semiconductor laser device can be operated at a stable temperature.

Abstract: A high power semiconductor laser lighting device has a housing, a fan module arranged in an exhaust hole in the housing, a base connected to the bottom wall of the housing and disposed on a side of the fan module, and a semiconductor laser constant-temperature module. The base has a driving unit with at least one high power electronic component connected to fins of the fan module. The semiconductor laser constant-temperature module has a metallic partition to enclose a vacuum formed in a front portion of the housing, and a heat insulation layer arranged in the vacuum. The metallic partition has a side connecting the heat dissipation plate and an opposite side connecting a heating portion of a thermoelectric cooling chip, which includes a cooling portion connecting to a semiconductor laser lighting module. The high power semiconductor laser lighting device to keep an output power thereof constant within various environments.

Abstract: A heat dissipation module is used for high-power semiconductor laser device with operation current below 3.5 amperes and has a housing with a plurality of air holes in side panels of the housing, an air outlet on a rear panel of the housing and a heat dissipation module in the housing. The heat dissipation module has a heat-dissipating plate and a base placed beside the heat-dissipating plate, the base has a plurality of holes corresponding to at least one current controller, the current controller is arranged on one face of the heat-dissipating plate and near the air outlet, and the current controller has pins connected to holes on the base through insulating unit and wire. Therefore, the high-power semiconductor laser device can be operated at a stable temperature.

Abstract: A heat dissipation module is used for a high-power semiconductor laser device with an operation current below 8 amperes. The heat dissipation module has a housing, a plurality of air holes on in panels of the housing, an air outlet in a rear panel of the housing, a heat dissipation module in the housing, the heat dissipation module having a heat-dissipating plate and a base placed beside the heat-dissipating plate, the base having a plurality of holes corresponding to at least one high-power element, the high-power element being arranged on one face of the heat-dissipating plate and near the air outlet, and the high-power element having pins connected to holes on the base through insulating unit and wire. Therefore, the high-power semiconductor laser device can be operated at a stable temperature.

Abstract: A vacuum laser constant temperature device is adopted for a housing that has a heat dissipation module arranged therein. The device has a metallic partition adjacent to the heat dissipation module to enclose a airtight vacancy formed with the housing, a thermoelectric cooling chip with a heating portion connecting to a side of the metallic partition and a cooling portion, a semiconductor laser lighting module arranged in the airtight vacancy and connecting to the cooling portion of the thermoelectric cooling chip, and a heat insulation layer arranged both on an opposite side of the metallic partition and in the airtight vacancy. Heat generated by the semiconductor laser lighting module can be transferred to the heat dissipation module via the thermoelectric cooling chip and the metallic partition. The thermoelectric cooling chip makes an output power of the semiconductor laser lighting module keep constant within various environments without the condensation thereon.