Abstract: A method of packaging semiconductor dies may include: coupling a first die to a first substrate; forming a plurality of first portions of a plurality of metal pillars on a surface of the first substrate; forming a second portion of the plurality of metal pillars over each of the plurality of first portions of the plurality of metal pillars; forming a protection layer over sidewalls of each of the plurality of first portions and second portions of the plurality of metal pillars; coupling a second die to a second substrate; and coupling the plurality of metal pillars to the second substrate.

Abstract: A method of forming a semiconductor device includes forming an under-bump metallurgy (UBM) layer overlying a portion of a metal pad region within an opening of an encapsulating layer over a semiconductor substrate, and forming a bump layer overlying the UBM layer to fill the opening of the encapsulating layer. A removal process is initiated on an upper surface of the encapsulating layer and a coplanar top surface of the bump layer to remove the upper surface of the encapsulating layer until a top portion of the bump layer protrudes from the encapsulating layer.

Abstract: A method of forming a semiconductor device includes forming an under-bump metallurgy (UBM) layer overlying a portion of a metal pad region within an opening of an encapsulating layer over a semiconductor substrate, and forming a bump layer overlying the UBM layer to fill the opening of the encapsulating layer. A removal process is initiated on an upper surface of the encapsulating layer and a coplanar top surface of the bump layer to remove the upper surface of the encapsulating layer until a top portion of the bump layer protrudes from the encapsulating layer.

Abstract: A method of packaging semiconductor dies may include: coupling a first die to a first substrate; forming a plurality of first portions of a plurality of metal pillars on a surface of the first substrate; forming a second portion of the plurality of metal pillars over each of the plurality of first portions of the plurality of metal pillars; forming a protection layer over sidewalls of each of the plurality of first portions and second portions of the plurality of metal pillars; coupling a second die to a second substrate; and coupling the plurality of metal pillars to the second substrate.

Abstract: A method for fabricating bump structure forms an under-bump metallurgy (UBM) layer in an opening of an encapsulating layer, and then forms a bump layer on the UBM layer within the opening of the encapsulating layer. After removing excess material of the bump layer from the upper surface of the encapsulating layer, the encapsulating layer is removed till a top portion of the bump layer protrudes from the upper surface of the encapsulating layer.

Abstract: Package on package (PoP) devices and methods of packaging semiconductor dies are disclosed. In one embodiment, a PoP device includes a first packaged die and a second packaged die coupled to the first packaged die. Metal pillars are coupled to the first packaged die. The metal pillars have a first portion proximate the first packaged die and a second portion disposed over the first portion. Each of the metal pillars is coupled to a solder joint proximate the second packaged die.

Abstract: Package on package (PoP) devices and methods of packaging semiconductor dies are disclosed. In one embodiment, a PoP device includes a first packaged die and a second packaged die coupled to the first packaged die. Metal pillars are coupled to the first packaged die. The metal pillars have a first portion proximate the first packaged die and a second portion disposed over the first portion. Each of the metal pillars is coupled to a solder joint proximate the second packaged die.

Abstract: The present invention relates to a whisker-free coating structure and a method for fabricating the same. The whisker-free coating structure comprises a substrate, a tungsten doped copper layer and a lead-free tin layer, wherein the tungsten doped copper layer and the lead-free tin layer are formed on the substrate in turns; So that, the whisker growth in the lead-free tin layers can be effectively suppressed by this whisker-free coating structure.

Abstract: A method for fabricating bump structure forms an under-bump metallurgy (UBM) layer in an opening of an encapsulating layer, and then forms a bump layer on the UBM layer within the opening of the encapsulating layer. After removing excess material of the bump layer from the upper surface of the encapsulating layer, the encapsulating layer is removed till a top portion of the bump layer protrudes from the upper surface of the encapsulating layer.

Abstract: A whisker-free coating structure and a method for fabricating the same are disclosed. The whisker-free coating structure includes a substrate, a tungsten doped copper layer overlaying the substrate, and a lead-free tin layer overlaying the tungsten doped copper layer.