Abstract: Methods, systems, and devices for skipping pages for weak wordlines of a memory device during pre-programming are described. A memory device may be configured to operate in a first mode involving skipping one or more pages (e.g., a lower page (LP)) associated with a set of wordlines. In some examples, a testing system may determine the set of wordlines (e.g., weak wordlines) for which to skip pages according to performance degradation for the wordlines in response to applying a threshold temperature to a test memory device. In the first mode, the memory device may store (e.g., pre-program) data in a subset of pages distinct from the skipped pages. The memory device may switch to a second mode in response to a trigger condition. In the second mode, the memory device may use each page associated with the wordlines and may refrain from skipping the one or more pages.

Abstract: Methods, systems, and devices for skipping pages for weak wordlines of a memory device during pre-programming are described. A memory device may be configured to operate in a first mode involving skipping one or more pages (e.g., a lower page (LP)) associated with a set of wordlines. In some examples, a testing system may determine the set of wordlines (e.g., weak wordlines) for which to skip pages according to performance degradation for the wordlines in response to applying a threshold temperature to a test memory device. In the first mode, the memory device may store (e.g., pre-program) data in a subset of pages distinct from the skipped pages. The memory device may switch to a second mode in response to a trigger condition. In the second mode, the memory device may use each page associated with the wordlines and may refrain from skipping the one or more pages.