Abstract: New data class generation is provided. A dimension score is generated for each respective dimension of a plurality of predefined dimensions as relating to column attributes of a data asset while performing a static reference data analysis of the data asset. The dimension score of each respective dimension is added together to obtain a total dimension score for the data asset. It is determined whether the total dimension score of the data asset is greater than a predefined minimum dimension score threshold level. The data asset is identified as new static reference data in response to determining that the total dimension score of the data asset is greater than the predefined minimum dimension score threshold level. A new data class is generated based on the new static reference data.

Abstract: An approach is disclosed that receives a new ETL job. The job includes a number of intermediate database files descriptors corresponding to a plurality of intermediate database files that are used to accomplish the new ETL. A new data lineage graph is created that pertains to the new ETL job. The new data lineage graph is compared to a number of existing data lineage graphs with each of the existing data lineage graphs corresponding to an existing ETL job. The approach substitutes existing database files found in the existing data lineage graphs for one or more intermediate database files found in the new data lineage graph. The new ETL job is then run by utilizing the substituted database files, the result being a new final database file.

Abstract: An approach is provided that retrieves fingerprint configuration sets corresponding to a received data source and uses the configuration sets to generate fingerprints that correspond to the data source. These fingerprints are compared to a number of fingerprints that are stored in a repository. If a match is found, then the data quality configuration set is retrieved from the repository and used to perform a data quality analysis. On the other hand, if a match is not found, then one of the configuration sets is selected to perform the data quality analysis on the received data source and the repository is updated so that the selected fingerprint configuration set corresponds to the received data source.

Abstract: Provided is a method, computer program product, and system for classifying a set of data items based on format organizations. A processor may determine at least one format organization of a set of data items. The format organization of a data item indicates a symbol type of at least one continuous symbol in the data item and a number of the at least one continuous symbol. The processor may determine at least one candidate data class for the set of data items from a plurality of predetermined data classes based on the at least one format organization. The processor may classify the set of data items into at least one target data class selected from the at least one candidate data class. In this way, the set of data items can be efficiently classified.

Abstract: A computer-implemented method includes: reading a vector of a first table in a database, the vector including counts of a plurality of keywords in the first table, the plurality of keywords including a first keyword and a second keyword; determining a first custom attribute describing the first table, the first custom attribute having a vector including counts of at least a first portion of the plurality of keywords in the first table; determining a multiplier of the first custom attribute, the multiplier being a number of other tables that reference the first custom attribute; and revising the vector of the first table based on the first custom attribute.

Abstract: Provided is a method, computer program product, and system for classifying a set of data items based on format organizations. A processor may determine at least one format organization of a set of data items. The format organization of a data item indicates a symbol type of at least one continuous symbol in the data item and a number of the at least one continuous symbol. The processor may determine at least one candidate data class for the set of data items from a plurality of predetermined data classes based on the at least one format organization. The processor may classify the set of data items into at least one target data class selected from the at least one candidate data class. In this way, the set of data items can be efficiently classified.

Abstract: A computer-implemented method includes: reading a vector of a first table in a database, the vector including counts of a plurality of keywords in the first table, the plurality of keywords including a first keyword and a second keyword; determining a first custom attribute describing the first table, the first custom attribute having a vector including counts of at least a first portion of the plurality of keywords in the first table; determining a multiplier of the first custom attribute, the multiplier being a number of other tables that reference the first custom attribute; and revising the vector of the first table based on the first custom attribute.

Abstract: A mobile phone, a method of assembling a mobile phone, and a method of recording an ECG using the mobile phone. The mobile phone comprises a casing; a wireless communication module disposed inside the casing for communicating with a mobile network; one or more sensor elements integrated on the casing for measuring an electrophysiological signal of a person; and an ECG generator module disposed inside the casing and coupled to the sensor elements and the communication module for generating an ECG from the measured electrophysiological signal and for transmitting data representing said ECG via the communication module.

Abstract: A method of manufacturing a semiconductor device includes defining a first voltage region, a second voltage region, and a third voltage region on a substrate. The first, second, and third voltage regions are configured to handle first, second, and third voltage levels, respectively, that are different from each other. A nitride layer overlying the first, second, and third voltage regions are formed. An oxide layer overlying the nitride layer is formed. The oxide layer is patterned to expose a portion of the nitride layer overlying the first voltage region. The exposed portion of the nitride layer is removed using a wet etch process. A first gate oxide layer overlying the first voltage region is formed. Portions of the oxide layer and the nitride layer overlying the second and third voltage regions are removed. Impurities are selectively implanted into the third voltage region while preventing the impurities from being provided in the second voltage region.

Abstract: A method of manufacturing a semiconductor device includes defining a first voltage region, a second voltage region, and a third voltage region on a substrate. The first, second, and third voltage regions are configured to handle first, second, and third voltage levels, respectively, that are different from each other. A nitride layer overlying the first, second, and third voltage regions are formed. An oxide layer overlying the nitride layer is formed. The oxide layer is patterned to expose a portion of the nitride layer overlying the first voltage region. The exposed portion of the nitride layer is removed using a wet etch process. A first gate oxide layer overlying the first voltage region is formed. Portions of the oxide layer and the nitride layer overlying the second and third voltage regions are removed. Impurities are selectively implanted into the third voltage region while preventing the impurities from being provided in the second voltage region.

Abstract: A method of manufacturing a semiconductor device includes defining a first voltage region, a second voltage region, and a third voltage region on a substrate. The first, second, and third voltage regions are configured to handle first, second, and third voltage levels, respectively, that are different from each other. A nitride layer overlying the first, second, and third voltage regions are formed. An oxide layer overlying the nitride layer is formed. The oxide layer is patterned to expose a portion of the nitride layer overlying the first voltage region. The exposed portion of the nitride layer is removed using a wet etch process. A first gate oxide layer overlying the first voltage region is formed. Portions of the oxide layer and the nitride layer overlying the second and third voltage regions are removed. Impurities are selectively implanted into the third voltage region while preventing the impurities from being provided in the second voltage region.