Abstract: Some embodiments relate to a manufacturing method for a semiconductor device. In this method, a semiconductor workpiece, which includes a metal gate electrode thereon, is provided. An opening is formed in the semiconductor workpiece to expose a surface of the metal gate. Formation of the opening leaves a polymeric residue on the workpiece. To remove the polymeric residue from the workpiece, a cleaning solution that includes an organic alkali component is used.

Abstract: Some embodiments relate to methods and apparatus for providing a homogeneous wafer temperature profile in a wafer cleaning tool without introducing unwanted particles onto the wafer. In some embodiments, a disclosed wafer cleaning tool has a processing chamber configured to house a semiconductor wafer. A dispensing arm provides a high temperature cleaning solution to the semiconductor wafer. A heating cup is located within the processing chamber at a position that is around the perimeter of the semiconductor wafer. The heating cup generates heat that increases the temperature of outer edges of the semiconductor wafer by a greater amount than a temperature of a center of the semiconductor wafer, thereby homogenizing an internal temperature profile of the semiconductor wafer.

Abstract: A wet chemical processing method and apparatus for use in semiconductor manufacturing and in other applications, is provided. The method and apparatus provide for energizing a processing liquid such as a cleaning or etching liquid using ultrasonic, megasonic or other energy waves or by combining the liquid with a pressurized gas to form a pressurized spray, or using both. The energized, pressurized fluid is directed to a substrate surface using a fluid delivery system and overcomes any surface tensions associated with liquids, solids, or air and enables the processing liquid to completely fill any holes such as contact holes, via holes or trenches, formed on the semiconductor substrate.

Abstract: Some embodiments relate to a manufacturing method for a semiconductor device. In this method, a semiconductor workpiece, which includes a metal gate electrode thereon, is provided. An opening is formed in the semiconductor workpiece to expose a surface of the metal gate. Formation of the opening leaves a polymeric residue on the workpiece. To remove the polymeric residue from the workpiece, a cleaning solution that includes an organic alkali component is used.

Abstract: A method for preventing the formation of contaminating polymeric films on the backsides of semiconductor substrates includes providing an oxygen-impregnated focus ring and/or an oxygen-impregnated chuck that releases oxygen during etching operations. The method further provides delivering oxygen gas to the substrate by mixing oxygen in the cooling gas mixture, maintaining the focus ring at a temperature no greater than the substrate temperature during etching and cleaning the substrate using a two step plasma cleaning sequence that includes suspending the substrate above the chuck.

Abstract: A system and method for etching a substrate is provided. An embodiment comprises utilizing an inert carrier gas in order to introduce a liquid etchant to a substrate. The inert carrier gas may prevent undesirable chemical reactions from taking place during the etching process, thereby helping to reduce the number of defects that occur to the substrate and other structures during the etching process.

Abstract: After trench line pattern openings and via pattern openings are formed in a inter-metal dielectric insulation layer of a semiconductor wafer using trench-first dual damascene process, the wafer is wet cleaned in a single step wet clean process using a novel wet clean solvent composition. The wet clean solvent effectively cleans the dry etch residue from the plasma etching of the dual damascene openings, etches back the TiN hard mask layer along the dual damascene openings and forms a recessed surface at the conductor metal from layer below exposed at the bottom of the via openings of the dual damascene openings.

Abstract: A method for preventing the formation of contaminating polymeric films on the backsides of semiconductor substrates includes providing an oxygen-impregnated focus ring and/or an oxygen-impregnated chuck that releases oxygen during etching operations. The method further provides delivering oxygen gas to the substrate by mixing oxygen in the cooling gas mixture, maintaining the focus ring at a temperature no greater than the substrate temperature during etching and cleaning the substrate using a two step plasma cleaning sequence that includes suspending the substrate above the chuck.

Abstract: A method for preventing the formation of contaminating polymeric films on the backsides of semiconductor substrates includes providing an oxygen-impregnated focus ring and/or an oxygen-impregnated chuck that releases oxygen during etching operations. The method further provides delivering oxygen gas to the substrate by mixing oxygen in the cooling gas mixture, maintaining the focus ring at a temperature no greater than the substrate temperature during etching and cleaning the substrate using a two step plasma cleaning sequence that includes suspending the substrate above the chuck.

Abstract: After trench line pattern openings and via pattern openings are formed in a inter-metal dielectric insulation layer of a semiconductor wafer using trench-first dual damascene process, the wafer is wet cleaned in a single step wet clean process using a novel wet clean solvent composition. The wet clean solvent effectively cleans the dry etch residue from the plasma etching of the dual damascene openings, etches back the TiN hard mask layer along the dual damascene openings and forms a recessed surface at the conductor metal from layer below exposed at the bottom of the via openings of the dual damascene openings.

Abstract: A cavitation cleaning system and method for using the same to remove particulate contamination from a substrate including providing at least one substrate immersed in a cleaning solution said cleaning solution contained in a cleaning solution container. The container further includes means for producing gaseous cavitation bubbles of ultrasound energy, said gaseous cavitation bubbles arranged to contact at least a portion of the at least one substrate; applying ultrasound energy to create gaseous cavitation bubbles to contact the substrate to remove adhering residual particles in a substrate surface cleaning process; and, recirculating the cleaning solution through a particulate filtering means.

Abstract: A cleaning solution and a method for cleaning a semiconductor wafer using the cleaning solution are provided. The method includes submerging the semiconductor wafer in a cleaning solution to remove by-products generated during integrated circuit formation processes. The cleaning solution includes an organic solvent, a metal reagent, a substitutive agent, and water.

Abstract: A method for cleaning semiconductor substrates includes a DI water clean operation that uses a spin speed no greater than 350 rpm. The cleaning method may include additional cleaning operations such as an organic clean, an aqueous chemical clean or a DI water/ozone clean. The cleaning method may be used to clean substrates after the conclusion of an etching procedure which exposes a single film between a Cu-containing conductive material and the environment. The spin speed of the DI water clean operation prevents copper corrosion due to breakdown of the film that separates the Cu-containing conductive material from the environment.

Abstract: A cleaning tool for cleaning substrates, comprising a circulation conduit through which is circulated a cleaning liquid or gas. The circulation conduit is disposed in fluid communication with an upstream flow chamber and a downstream cleaning chamber, the cross-sectional area of which cleaning chamber is less than the cross-sectional area of the flow chamber. In use, the cleaning chamber receives a wafer substrate for cleaning of particles or removal of polymer films from the substrate. The smaller cross-sectional area of the cleaning chamber accelerates the flow of a cleaning fluid flowing through the cleaning chamber from the flow chamber. The rapidly-flowing cleaning fluid removes the particles and/or films from the substrate while preventing dropping of the removed particles or re-deposition of the film back onto the substrate. A particle filter may be provided in the circulation conduit downstream of the cleaning chamber for removing the particles.

Abstract: A method for preventing the formation of contaminating polymeric films on the backsides of semiconductor substrates includes providing an oxygen-impregnated focus ring and/or an oxygen-impregnated chuck that releases oxygen during etching operations. The method further provides delivering oxygen gas to the substrate by mixing oxygen in the cooling gas mixture, maintaining the focus ring at a temperature no greater than the substrate temperature during etching and cleaning the substrate using a two step plasma cleaning sequence that includes suspending the substrate above the chuck.

Abstract: A method for cleaning semiconductor substrates includes a DI water clean operation that uses a spin speed no greater than 350 rpm. The cleaning method may include additional cleaning operations such as an organic clean, an aqueous chemical clean or a DI water/ozone clean. The cleaning method may be used to clean substrates after the conclusion of an etching procedure which exposes a single film between a Cu-containing conductive material and the environment. The spin speed of the DI water clean operation prevents copper corrosion due to breakdown of the film that separates the Cu-containing conductive material from the environment.

Abstract: A composition and method for fabricating a semiconductor wafer containing copper is disclosed, which method includes plasma etching a dielectric layer from the surface of the wafer, plasma ashing a resist from the surface of the wafer, and cleaning the wafer surface by contacting same with a cleaning formulation, which includes the following components and their percentage by weight ranges shown: (a) from about 0.01 to 80% by weight organic solvent, (b) from about 0.01 to 30% by weight copper chelating agent, (c) from about 0.01 to 10% by weight copper inhibitor, and (d) from about 0.01 to 70% by weight water.

Abstract: A cavitation cleaning system and method for using the same to remove particulate contamination from a substrate including providing at least one substrate immersed in a cleaning solution said cleaning solution contained in a cleaning solution container. The container further includes means for producing gaseous cavitation bubbles of ultrasound energy, said gaseous cavitation bubbles arranged to contact at least a portion of the at least one substrate; applying ultrasound energy to create gaseous cavitation bubbles to contact the substrate to remove adhering residual particles in a substrate surface cleaning process; and, recirculating the cleaning solution through a particulate filtering means.

Abstract: A composition and method for fabricating a semiconductor wafer containing copper is disclosed, which method includes plasma etching a dielectric layer from the surface of the wafer, plasma ashing a resist from the surface of the wafer, and cleaning the wafer surface by contacting same with a cleaning formulation, which includes the following components and their percentage by weight ranges shown: (a) from about 0.01 to 80% by weight organic solvent, (b) from about 0.01 to 30% by weight copper chelating agent, (c) from about 0.01 to 10% by weight copper inhibitor, and (d) from about 0.01 to 70% by weight water.