Abstract: A micro-motion sensing device and a sensing method thereof are provided. The micro-motion sensing device includes a motion sensor, a motion classifier, and a render. The motion sensor receives an input radar signal and receives a video stream information through an image capturer. The motion sensor obtains velocity information and range information of an object according to the input radar signal, and generates a first video stream information by processing the video stream information according to the velocity information. The motion classifier generates a motion prediction information by classifying a motion of the object according to the velocity information, the range information, and the first video stream information. The render adjusts a rendered frequency of the first video stream information according to the velocity information.

Abstract: A detection device for detecting an eyeball includes a frame element, a transceiver, and a contact lens element. The transceiver is disposed on the frame element. The transceiver transmits a first RF (Radio Frequency) signal. The contact lens element includes a resonator. The resonator converts the first RF signal into a first ultrasonic signal. The first ultrasonic signal is transmitted to the eyeball. The resonator converts a second ultrasonic signal from the eyeball into a second RF signal. The transceiver receives the second RF signal.

Abstract: A method for fabricating a high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a gate electrode on the p-type semiconductor layer, and then forming a source electrode and a drain electrode adjacent to two sides of the gate electrode. Preferably, the buffer layer further includes a bottom portion having a first carbon concentration and a top portion having a second carbon concentration, in which the second carbon concentration is less than the first carbon concentration and a thickness of the bottom portion is less than a thickness of the top portion.

Abstract: A detection system and detection method are disclosed herein, the detection system includes a first detector, a second detector, an actuator and a processing device. The first detector and the second detector detect a target in a first detection range and a second detection range respectively, to generate a first detection signal and a second detection signal. The processing device establishes a detection movement path according to the first detection signal and the second detection signal, compares the detection movement path with a plurality of historical movement paths to select the historical movement path that best matches the detection movement path from the historical movement paths, and transmits a driving signal to the actuator in a third detection range when the processing device predicts that the target moves to the third detection range according to the best matching historical movement path.

Abstract: A detection system is disclosed herein, the detection system includes a first detection device. The first detection device operates at a first operating power to capture a first image data. Wherein, when the first detection device determines there are differences between a plurality of first frames in the first image data, the first detection device switches to operate at a second operating power to capture a second image data, and the first operating power is less than the second operating power. And the first detection device determines whether the second image data matches an identification data to generate a determining result, and generates a notification signal according to the determining result.

Abstract: A superlattice structure includes a substrate. A first superlattice stack is disposed on the substrate. The first superlattice stack includes a first superlattice layer, a second superlattice layer and a third superlattice layer disposed from bottom to top. Three stress relaxation layers respectively disposed between the first superlattice layer and the second superlattice layer, the second superlattice layer and the third superlattice layer and on the third superlattice layer. Each of the stress relaxation layers includes a group III-V compound layer. The thickness of each of the stress relaxation layers should be greater than a relaxation critical thickness.

Abstract: An inductor at least includes an iron-core, a first coil and a second coil. A first coil terminal of the first coil is fixed at a first terminal and a second coil terminal of the second coil is fixed at a second terminal. The first coil and the second coil are wound around the iron-core using a symmetric winding manner, the symmetric winding manner at least includes a first winding manner, a second winding manner and a third winding manner. A third coil terminal of the first coil is fixed at a third terminal and a fourth coil terminal of the second coil is fixed at a fourth terminal. The second winding manner and the third winding manner are manners of a turn of either the first coil or the second coil crossing over a turn of either the second coil or the first coil.

Abstract: A detection system is disclosed herein, the detection system includes a first detection device. The first detection device operates at a first operating power to capture a first image data. Wherein, when the first detection device determines there are differences between a plurality of first frames in the first image data, the first detection device switches to operate at a second operating power to capture a second image data, and the first operating power is less than the second operating power. And the first detection device determines whether the second image data matches an identification data to generate a determining result, and generates a notification signal according to the determining result.

Abstract: A detection system and detection method are disclosed herein, the detection system includes a first detector, a second detector, an actuator and a processing device. The first detector and the second detector detect a target in a first detection range and a second detection range respectively, to generate a first detection signal and a second detection signal. The processing device establishes a detection movement path according to the first detection signal and the second detection signal, compares the detection movement path with a plurality of historical movement paths to select the historical movement path that best matches the detection movement path from the historical movement paths, and transmits a driving signal to the actuator in a third detection range when the processing device predicts that the target moves to the third detection range according to the best matching historical movement path.

Abstract: A FinFET device includes a substrate, first and second fins, first and second gates and first and second epitaxial layers. The substrate has a first region and a second region. The first and second fins are on the substrate respectively in the first and second regions. In an embodiment, the number of the first fins is different from the number of the second fins. The first and second gates are on the substrate and respectively across the first and second fins. The first epitaxial layers are disposed in first recesses of the first fins adjacent to the first gate. The second epitaxial layers are disposed in second recesses of the second fins adjacent to the second gate. In an embodiment, the maximum width of the first epitaxial layers is L1, the maximum width of the second epitaxial layers is L2, and (L2?L1)/L1 is equal to or less than about 1%.

Abstract: A FinFET device includes a substrate, first and second fins, first and second gates and first and second epitaxial layers. The substrate has a first region and a second region. The first and second fins are on the substrate respectively in the first and second regions. In an embodiment, the number of the first fins is different from the number of the second fins. The first and second gates are on the substrate and respectively across the first and second fins. The first epitaxial layers are disposed in first recesses of the first fins adjacent to the first gate. The second epitaxial layers are disposed in second recesses of the second fins adjacent to the second gate. In an embodiment, the maximum width of the first epitaxial layers is L1, the maximum width of the second epitaxial layers is L2, and (L2?L1)/L1 is equal to or less than about 1%.

Abstract: A FinFET device includes a substrate, first and second fins, first and second gates and first and second epitaxial layers. The substrate has a first region and a second region. The first and second fins are on the substrate respectively in the first and second regions. In an embodiment, the number of the first fins is different from the number of the second fins. The first and second gates are on the substrate and respectively across the first and second fins. The first epitaxial layers are disposed in first recesses of the first fins adjacent to the first gate. The second epitaxial layers are disposed in second recesses of the second fins adjacent to the second gate. In an embodiment, the maximum width of the first epitaxial layers is L1, the maximum width of the second epitaxial layers is L2, and (L2?L1)/L1 is equal to or less than about 1%.

Abstract: A method for forming an epitaxial layer on a substrate is disclosed. The method includes the steps of: providing a substrate into a chamber; injecting a precursor and a carrier gas to form the epitaxial layer on the substrate at a starting pressure; and pumping down the starting pressure to a second pressure according to a gradient during a cool down process in the chamber.

Abstract: A method for manufacturing a semiconductor structure comprises the following steps. First, a recess is formed in a substrate. At least one wet cleaning process is performed to the recess and the substrate. Then, a baking process is performed to the recess and the substrate in an atmosphere containing H2 gas. After the baking process, a dry cleaning process is performed the recess and the substrate.

Abstract: A semiconductor device is disclosed. The semiconductor device includes: a substrate, a gate structure on the substrate, a spacer adjacent to the gate structure, an epitaxial layer in the substrate adjacent to two sides of the spacer, and a dislocation embedded within the epitaxial layer. Preferably, the top surface of the epitaxial layer is lower than the top surface of the substrate, and the top surface of the epitaxial layer has a V-shape.

Abstract: An infrared control system and an operation method thereof are provided. The infrared control system includes a sound sensor, an infrared transmitter and a processing unit. In an initialization period, the processing unit controls the infrared transmitter to transmit a first infrared control code of a first control code set to a target device, and monitors an environment sound via the sound sensor to determine whether the target device responds to the first infrared control code. If the processing unit determines that the target device responds to the first infrared control code according to environment sound, the processing unit records a relationship between the first control code set and the target device.

Abstract: A method for forming an epitaxial layer on a substrate is disclosed. The method includes the steps of: providing a substrate into a chamber; injecting a precursor and a carrier gas to form the epitaxial layer on the substrate at a starting pressure; and pumping down the starting pressure to a second pressure according to a gradient during a cool down process in the chamber.

Abstract: A semiconductor device is disclosed. The semiconductor device includes: a substrate, a gate structure on the substrate, a spacer adjacent to the gate structure, an epitaxial layer in the substrate adjacent to two sides of the spacer, and a dislocation embedded within the epitaxial layer. Preferably, the top surface of the epitaxial layer is lower than the top surface of the substrate, and the top surface of the epitaxial layer has a V-shape.

Abstract: A web camera and an operation method thereof are provided. The web camera includes a photographic unit, an infrared (IR) transmitter, a network communication unit and a processing unit. The photographic unit captures an image. The network communication unit establishes a connection with a remote host via a communication network. The processing unit sends the image captured by the photographic unit to the remote host via the network communication unit. The processing unit receives a control command from the remote host via the network communication unit. The processing unit transmits an IR control code corresponding to the control command to a target device via the IR transmitter. The processing unit determines whether the target device responds to the IR control code based on the image.

Abstract: A sphere panorama image capturing device including an outer sphere, an inner sphere, a plurality of 3D image capturing modules and an orientation sensing module is provided. The outer sphere is transparent. The inner sphere is disposed inside the outer sphere. The inner sphere and the outer sphere have a distance therebetween and the inner sphere is rotatable relative to the outer sphere. The 3D image capturing modules are fixed on the inner sphere. An area of the inner sphere that corresponds to the 3D image capturing module is transparent. The orientation sensing module is disposed on the inner sphere.