Abstract: A display device includes a display panel and a switch panel. The switch panel includes a first substrate disposed on the display panel, a shielding pattern layer, a light transmitting layer, pixel electrodes disposed on the light transmitting layer, a second substrate disposed on the pixel electrodes, and the liquid crystal layer disposed between the first substrate and the second substrate. The shielding pattern layer is disposed on the first substrate and includes opening parts and light shielding parts arranged alternately with the opening parts. Each of the light shielding parts has a first thickness. The light transmitting layer is disposed on the shielding pattern layer and includes filling parts filling the opening parts and extending parts arranged alternately with the filling parts. Each of the filling parts has a second thickness greater than the first thickness.

Abstract: A display device includes a light-emitting substrate, a counter substrate, multiple color conversion layers, a low-refractive-index layer, and multiple patterned Fabry-Perot filter layers. The light-emitting substrate is used to emit a light. The counter substrate is disposed opposite to the light-emitting substrate. The color conversion layers are disposed between the light-emitting substrate and the counter substrate. The low-refractive-index layer is disposed between the counter substrate and the color conversion layers. The refractive index of the low-refractive-index layer is less than or equal to that of the color conversion layers. The patterned Fabry-Perot filter layers are disposed between the low-refractive-index layer and the color conversion layers. Each of the patterned Fabry-Perot filter layers has multiple through-holes and includes two reflective layers and a spacer layer between the two reflective layers.

Abstract: A display apparatus includes a color filter substrate, a first encapsulation layer, a first bank layer, wavelength selective dimming patterns, color conversion patterns, a second encapsulation layer, a driving circuit substrate, a second bank layer and light emitting components. The wavelength selective dimming patterns are disposed in at least a portion of first openings of the first bank layer. The color conversion patterns are disposed in the first openings and on the wavelength selective dimming patterns. One wavelength selective dimming pattern includes a base material and scattering particles. The wavelength selective dimming pattern has a thickness within a range of 2 ?m to 10 ?m in a direction perpendicular to the color filter substrate. A volume ratio of the scattering particles to the wavelength selective dimming pattern falls within a range of 0.5% to 4.5%. Diameters of the scattering particles fall within a range of 80 nm to 200 nm.

Abstract: A display device includes a light-emitting substrate, a counter substrate, multiple color conversion layers and, a patterned distributed Bragg reflector. The counter substrate is disposed opposite to the light-emitting substrate, and has multiple sub-pixel regions. Each of the sub-pixel regions has a sub-pixel width. The color conversion layers are disposed between the light-emitting substrate and the counter substrate. The patterned distributed Bragg reflector is disposed on one side of the color conversion layers, and has multiple openings. Each of the openings has an opening width greater than or equal to 1 ?m and less than the sub-pixel width.

Abstract: A display apparatus includes a color filter substrate, a first encapsulation layer, a first bank layer, color conversion patterns, a second encapsulation layer, a second bank layer, a driving circuit substrate, and light-emitting devices. The first encapsulation layer is disposed on the color filter substrate. The first bank layer is disposed on the first encapsulation layer. The color conversion patterns are disposed in first openings of the first bank layer. The second encapsulation layer is disposed on the first bank layer and the color conversion patterns. The second bank layer is disposed on the second encapsulation layer. The driving circuit substrate is disposed opposite to the color filter substrate. The light-emitting devices are disposed on and electrically connected to the driving circuit substrate. The driving circuit substrate and the second bank layer are spaced from each other by a distance in a direction perpendicular to the driving circuit substrate.

Abstract: A display device includes a circuit substrate, first to third light-emitting diodes, a bank structure, a color conversion material layer, a first color filter component and a second color filter component. The first to third light-emitting diodes are located above the circuit substrate, wherein the first and third light-emitting diodes are light-emitting diodes of the same color, and the first and second light-emitting diodes are light-emitting diodes of different colors. The bank structure is located above the circuit substrate and has a first opening and a second opening. The first opening is overlapping with the first light-emitting diode, and the second opening is overlapping with the second and third light-emitting diodes. The color conversion material layer is filled into the first opening. The first color filter component is overlapping with the color conversion material layer. The second color filter component is overlapping with the second opening.

Abstract: The present disclosure in various embodiments provides a method. In some embodiments of the present disclosure, the method includes forming a transition metal dichalcogenide layer on a substrate; and performing an ion bombardment process on the transition metal dichalcogenide layer, performing an annealing process on the transition metal dichalcogenide layer.

Abstract: A display device includes a circuit substrate, a light emitting diode, an encapsulation layer, a color conversion layer and a first optical structure. The light emitting diode is located on the circuit substrate. The encapsulation layer covers the light emitting diode. The color conversion layer overlaps the light emitting diode. The first optical structure overlaps the color conversion layer and is located between the encapsulation layer and the color conversion layer. The first optical structure includes first gaps periodically arranged with a first pitch on a first direction. The width of each first gap in the first direction is 1 micrometer to 10 micrometers. A refractive index of a material of the first optical structure is greater than a refractive index of a material of the encapsulation layer.

Abstract: A method for forming a photomask includes the following steps. A first target pattern is provided, wherein the first target pattern includes a first pattern area and a second pattern area. The first pattern area includes a block pattern. The second pattern area includes multiple stripe patterns. A first sidewall reset area is defined in the second pattern area. A retarget procedure is executed on the first target pattern to obtain a second target pattern. The photomask is formed based on the second target pattern.

Abstract: A transistor substrate is provided. The transistor substrate includes a first electrode and a second electrode. The first electrode has a slit. The slit includes a curved portion. The first electrode is used for receiving a common voltage signal. The second electrode overlaps the first electrode. The second electrode and the curved portion of the slit have an overlapping region, and an area of the overlapping region is 0.2 times to 0.8 times an area of the curved portion.

Abstract: A method includes forming a 2-D material layer over a substrate, wherein the 2-D material layer comprises transition metal atoms and chalcogen atoms; forming a gate structure over the 2-D material layer; supplying chemical molecules to the 2-D material layer, such that atoms of the chemical molecules react with portions of the chalcogen atoms to weaken covalent bonds between the portions of the chalcogen atoms and the transition metal atoms; and forming source/drain contacts over the 2-D material layer, wherein contact metal atoms of the source/drain contacts form metallic bonds with the transition metal atoms of the 2-D material layer.

Abstract: A transistor substrate is provided. The transistor substrate includes a plurality of data lines and a plurality of scan lines. The scan lines intersect with the data lines to define a plurality of pixel units. One of the pixel units includes a first electrode, a second electrode and a switching transistor. The first electrode has a slit including a major axis portion and a curved portion connected to the major axis portion. One of the first electrode and the second electrode is used for receiving a pixel voltage signal, and the other is used for receiving a common voltage signal. The switching transistor includes a switching electrode. The switching electrode and the curved portion of the slit have an overlapping region, and an area of the overlapping region is 0.2 times to 0.8 times an area of the curved portion.

Abstract: A transistor substrate is provided. The transistor substrate includes a plurality of data lines and a plurality of scan lines. The scan lines intersect with the data lines to define a plurality of pixel units. One of the pixel units includes a first electrode, a second electrode and a switching transistor. The first electrode has a slit including a major axis portion and a curved portion connected to the major axis portion. One of the first electrode and the second electrode is used for receiving a pixel voltage signal, and the other is used for receiving a common voltage signal. The switching transistor includes a switching electrode. The switching electrode and the curved portion of the slit have an overlapping region, and an area of the overlapping region is 0.2 times to 0.8 times an area of the curved portion.

Abstract: A transistor substrate is provided. The transistor substrate includes a plurality of data lines and a plurality of scan lines, wherein the scan lines intersects with the data lines to define a plurality of pixel units. One of the pixel units includes a first electrode having a slit substantially parallel to the data lines. The pixel units include a second electrode and a switching transistor. The switching transistor includes a gate electrode connecting to one of the scan lines. The gate electrode has a first edge substantially parallel to the extending direction of the scan lines. The switching transistor includes a drain electrode electrically connected to one of the first electrode and the second electrode. The drain electrode includes an extending portion which extends toward the slit and extends away from an extending line of the first edge. The drain electrode and the slit have an overlapping region.

Abstract: An electronic device includes: a substrate including a first region and a second region, wherein the first region is in a middle position, and the second region is closer to an edge of the substrate than the first region; a first active layer disposed on the substrate and in the second region; a conducting electrode disposed on the substrate and in the second region, wherein the conducting electrode electrically connects to the first active layer and extends along a first direction; and a conductive layer disposed on the substrate and in the second region, wherein the conductive layer includes an opening, wherein a minimum distance from an edge of the opening to the first active layer along the first direction is different from a minimum distance from another edge of the opening to the first active layer along a second direction different from the first direction.

Abstract: A display panel is disclosed, which includes: a substrate including a display region and a border region adjacent to the display region; a first transistor disposed on the border region and including an active layer and a first conducting electrode on the substrate, wherein the first conducting electrode electrically connects to the active layer, and the first conducting electrode extends along a first direction; and a conductive layer disposed on the border region and including an opening, wherein the conductive layer partially overlaps the first conducting electrode in a top view of the border region, wherein a minimum distance from an edge of the opening to the active layer along the first direction is different from a minimum distance from another edge of the opening to the active layer along a second direction, and the first direction is different from the second direction.

Abstract: A glove donning device includes a guide rack having a positioning portion, and a glove providing a connection portion at one side of the glove-wearing mouth thereof and a tear line at the junction of the glove and the connection portion. The connection portion is detachably fastened to the positioning portion of the guide rack to hand down the glove against one side of the guide rack. When the hand is wearing the glove, the guide rack holds the glove in place so that the glove will not move arbitrarily, and the user's hand can be easily and smoothly worn by the glove-wearing mouth into the glove by a one-handed movement. Then, the hand is pulled outward to tear the tear line apart, so that the glove can be easily disconnected from the connection portion. This design solves the disadvantage that conventional gloves (such as thin-film gloves) must be worn with both hands.

Abstract: A transistor substrate is provided. The transistor substrate includes a plurality of data lines and a plurality of scan lines, wherein the scan lines intersects with the data lines to define a plurality of pixel units. One of the pixel units includes a first electrode having a slit substantially parallel to the data lines. The pixel units include a second electrode and a switching transistor. The switching transistor includes a gate electrode connecting to one of the scan lines. The gate electrode has a first edge substantially parallel to the extending direction of the scan lines. The switching transistor includes a drain electrode electrically connected to one of the first electrode and the second electrode. The drain electrode includes an extending portion which extends toward the slit and extends away from an extending line of the first edge. The drain electrode and the slit have an overlapping region.

Abstract: A retargeting method for optical proximity correction (OPC) is provided. The method includes: assigning evaluation points for defining profile of a layout pattern; identifying critical regions of the layout pattern that could result in limitation on the process window of the OPC; categorizing the critical regions based on geometries of the critical regions; obtaining movable ranges and address information of the evaluation points; and shifting the evaluation points according to the parameters obtained during the previous steps.

Abstract: A display device includes at least one display module and a backlight module. The display module includes display units and N driving chips. The N driving chips are arranged along a first direction and electrically connected to the display units. The display units are connected and arranged in N rows in the first direction and M columns in a second direction. N and M are respectively greater than or equal to 1. The backlight module includes a light bar assembly adapted to be disposed below a column of the M columns of the display units farthest from the driving chips, and a length of the light bar assembly corresponds to that of the display units along the first direction. The light bar assembly includes at least one first light bar unit. A length of each first light bar unit is X times the length of each display unit along the first direction, and X is greater than or equal to 1.