Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first wafer including a first metal structure within a body of the first wafer. The semiconductor structure also includes a second wafer including a second metal structure within a body of the second wafer, where the first wafer is coupled to the second wafer at an interface. The semiconductor structure further includes a metal bonding structure coupled to the first metal structure and the second metal structure and extending through the interface.

Abstract: The present invention discloses a display panel and a display device. The display panel comprises a plurality of common electrode blocks and a plurality of display regions. During a display period, one or more common electrode blocks corresponding to one of the display regions which is to be displayed during the display period are coupled to a common voltage; and during the display period, one or more of the common electrode blocks corresponding to the display regions which are not to be displayed during the display period are kept in a floating state.

Abstract: A probe cleaning sheet for preventing a probe pin damage and manufacturing method thereof, during the process of a probe pin puncturing the cleaning layer, the material of the cleaning layer and the plurality of high and low density cleaning particles of abrasive material contained in the high density cleaning material and the low density cleaning material are able to efficiently scrape away foreign material from the surface of the probe pin. In addition, the negative charge carried by the silicone itself and its lipophilic characteristics are used to transfer the foreign material on the probe pin to the cleaning layer, and the protective layer is used to prevent overpressure from the probe pin directly impacting the substrate and causing damage to the tips of the probe pin.

Abstract: A control system includes a plurality of driving circuits coupled in series, which include a first driving circuit and a second driving circuit. The first driving circuit includes a first receiver, a first transmitter and a first flag signal selector. The first transmitter is coupled to the first receiver, and the first flag signal selector is coupled between the first receiver and the first transmitter. The second driving circuit, coupled to the first driving circuit, includes a second receiver, a second transmitter and a second flag signal selector. The second transmitter is coupled to the second receiver, and the second flag signal selector is coupled between the second receiver and the second transmitter.

Abstract: A display control system for controlling a display panel having a plurality of display zones includes a main controller, a plurality of display driver circuits and a plurality of memories. Each of the display driver circuits is coupled to a corresponding display zone among the plurality of display zones, to control the corresponding display zone. Each of the memories is coupled to a corresponding display driver circuit among the plurality of display driver circuits, to store a compensation data for the corresponding display zone controlled by the corresponding display driver circuit. The plurality of display driver circuits are cascaded through a plurality of first transmission channels and connected through at least one second transmission channel, and each of the first transmission channels is coupled between two of the plurality of display driver circuits or between one of the plurality of display driver circuits and the main controller.

Abstract: A display device includes a circuit substrate, first to third light-emitting diodes, a bank structure, a color conversion material layer, a first color filter component and a second color filter component. The first to third light-emitting diodes are located above the circuit substrate, wherein the first and third light-emitting diodes are light-emitting diodes of the same color, and the first and second light-emitting diodes are light-emitting diodes of different colors. The bank structure is located above the circuit substrate and has a first opening and a second opening. The first opening is overlapping with the first light-emitting diode, and the second opening is overlapping with the second and third light-emitting diodes. The color conversion material layer is filled into the first opening. The first color filter component is overlapping with the color conversion material layer. The second color filter component is overlapping with the second opening.

Abstract: A method of forming a semiconductor device includes forming a first fin and a second fin protruding above a substrate; forming isolation regions on opposing sides of the first fin and the second fin; forming a metal gate over the first fin and over the second fin, the metal gate being surrounded by a first dielectric layer; and forming a recess in the metal gate between the first fin and the second fin, where the recess extends from an upper surface of the metal gate distal the substrate into the metal gate, where the recess has an upper portion distal the substrate and a lower portion between the upper portion and the substrate, where the upper portion has a first width, and the lower portion has a second width larger than the first width, the first width and the second width measured along a longitudinal direction of the metal gate.

Abstract: A probe cleaning sheet and a manufacturing method thereof are provided. The manufacturing method includes material preparing step, first printing step, first baking step, first cooling step, second printing step, second baking step, and second cooling step. The probe cleaning sheet includes a silicone glass fiber cloth layer and an abrasive layer set printed on one side of the silicone glass fiber cloth layer. The silicone glass fiber cloth layer includes a plurality of glass fibers and silicone, the silicone is coated on the surface of the glass fibers and in the gap between the glass fibers. The abrasive layer set includes a high-density abrasive layer printed on one side of the silicone glass fiber cloth layer and a low-density abrasive layer printed on the top surface of the high-density abrasive layer and is opposite to the silicone glass fiber cloth layer.

Abstract: A CMOS image sensor includes a unit pixel array including a photodiode array, a color filter array, a micro-lens array, and a grid isolation structure laterally separating adjacent color filters. The grid isolation structure includes a first low-n grid, a second low-n grid underlying the first low-n grid, and a metal grid within the second low-n grid, the first low-n grid being narrower than the second low-n grid. The color filter array includes color filter matrixes, all color filter matrixes have the same arrangement pattern. Sizes of color filters in each color filter matrix vary depending on locations of the color filters in the color filter matrix. In an edge portion, a distance between a center of a color filter matrix and a center of a corresponding unit pixel matrix in plan view varies depending on a location of the unit pixel matrix in the CMOS image sensor.

Abstract: Provided are semiconductor devices with isolation structures and methods for fabricating such devices. An exemplary method includes forming an isolation layer over a semiconductor material; forming source/drain regions over the isolation layer; removing a selected gate structure, wherein removing the selected gate structure forms a trench in the semiconductor material; and forming an isolation structure in the trench.

Abstract: Systems and methods for providing a structure-aware sequence model that can interpret a document's text without first inferring the proper reading order of the document. In some examples, the model may use a graph convolutional network to generate contextualized “supertoken” embeddings for each token, which are then fed to a transformer that employs a sparse attention paradigm in which attention weights for at least some supertokens are modified based on differences between predicted and actual values of the order and distance between the attender and attendee supertokens.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first wafer including a first metal structure within a body of the first wafer. The semiconductor structure also includes a second wafer including a second metal structure within a body of the second wafer, where the first wafer is coupled to the second wafer at an interface. The semiconductor structure further includes a metal bonding structure coupled to the first metal structure and the second metal structure and extending through the interface.

Abstract: The present disclosure in various embodiments provides a method. In some embodiments of the present disclosure, the method includes forming a transition metal dichalcogenide layer on a substrate; and performing an ion bombardment process on the transition metal dichalcogenide layer, performing an annealing process on the transition metal dichalcogenide layer.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer, forming a second barrier layer on the first barrier layer, forming a first hard mask on the second barrier layer, removing the first hard mask and the second barrier layer to form a recess; and forming a p-type semiconductor layer in the recess.

Abstract: A method of forming a semiconductor device includes: forming a dummy gate structure over a first fin and around first channel regions that are disposed over the first fin; forming an interlayer dielectric (ILD) layer over the first fin around the dummy gate structure; replacing the dummy gate structure with a gate structure; forming a first dielectric plug and a second dielectric plug in the gate structure on opposing sides of the first fin, where the first and second dielectric plugs cut the gate structure into a plurality of segments separated from each other; removing a segment of the gate structure interposed between the first dielectric plug and the second dielectric plugs to expose the first channel regions; removing the exposed first channel regions, where after removing the exposed first channel regions, a recess is formed in the ILD layer; and filling the recess with a dielectric material.

Abstract: A display driver and a charge recycling method are provided. The display driver includes a charging and discharging circuit and a control circuit. A first terminal of the charging and discharging circuit is coupled to at least one of the scan lines, and a second terminal of the charging and discharging circuit is coupled to at least one of the data lines. The control circuit is coupled to a first control terminal and a second control terminal of the charging and discharging circuit. The charging and discharging circuit receives a first current generated by discharging the at least one of the scan lines to charge the capacitor based on a first control signal. The charging and discharging circuit discharges the capacitor to generate a second current for charging the at least one of the data lines based on a second control signal.

Abstract: Some implementations described herein provide an optoelectronic device and methods of formation. The optoelectronic device is fabricated using a series of operations that includes a patterning operation using a layer of a negative photoresist material, followed by a single dry etch operation, a single wet strip operation, and a single wet etch operation. The series of operations may include a reduced number of operations relative to another series of operations that include a patterning operation using a layer of a positive photoresist material. Through the reduced number of operations, handling-induced damage to the device may be reduced. Additionally, the high absorption structure may include a quantum efficiency that is greater relative to another quantum efficiency of another high absorption structure formed through the series of operations that include the patterning operation using the layer of the positive photoresist material.

Abstract: A detecting and status reporting system, includes a first control device and at least one second control device. The first control device sends a first message to a remote device through a first communication link. The first communication specification of the first communication link is LPWAN (Low-Power Wide-Area Network). The at least one second control device communicates with the remote device through the first communication link, and communicates with the first control device through a second communication link. The second communication specification of the second communication link is LR-WPANs (Low-Rate Wireless Personal Area Networks). When the first communication link of the first control device is abnormal, the first control device sends the first message to the at least one second control device through the second communication link, and sends the first message to the remote device through the first communication link of the at least one second control device.

Abstract: A method of forming a semiconductor device includes forming a first fin and a second fin protruding above a substrate; forming isolation regions on opposing sides of the first fin and the second fin; forming a metal gate over the first fin and over the second fin, the metal gate being surrounded by a first dielectric layer; and forming a recess in the metal gate between the first fin and the second fin, where the recess extends from an upper surface of the metal gate distal the substrate into the metal gate, where the recess has an upper portion distal the substrate and a lower portion between the upper portion and the substrate, where the upper portion has a first width, and the lower portion has a second width larger than the first width, the first width and the second width measured along a longitudinal direction of the metal gate.