Abstract: A nozzle for emitting a fluid comprises a channel, a light source and a light sensor. The channel is configured to flow the fluid. The light source is configured to emit light towards a surface on which the fluid is applied and the light sensor is configured to receive reflected light from the surface.

Abstract: A method for generating an electromagnetic radiation includes the following operations. A target material is introduced in a chamber. A light beam is irradiated on the target material in the chamber to generate plasma and an electromagnetic radiation. The electromagnetic radiation is collected with an optical device. A gas mixture is introduced in the chamber. The gas mixture includes a first buffer gas reactive to the target material, and a second buffer gas to slow down debris of the target material and/or plasma by-product, so as to increase an reaction efficiency of the target material and the first buffer gas, and to reduce deposition of the debris of the target material and/or the plasma by-product on the optical device.

Abstract: A touch panel embedded in an electronic device defines a display region and a non-display region. The touch panel includes a cover and a touch sensing layer bonded on the cover. The touch sensing layer includes a substrate, a touch sensor disposed on the substrate in the display region, a peripheral circuit structure disposed on the substrate in the non-display region, and a decoration layer. The peripheral circuit structure is electrically connected with the touch sensor for receiving signals from the touch sensor. The decoration layer is disposed in the touch sensing layer.

Abstract: The proposed vacuum jacketed tube may deliver the high/low temperature fluid with less temperature-transfer, especially may delivery high/low temperature fluid through a flexible structure. The vacuum jacketed tube includes a tubular structure surrounding a pipe wherein the fluid is delivered therethrough. Also, the space between the tubular structure and the pipe may be vacuumed. Therefore, the heat transferred into and/or away the fluid may be minimized, especially if the tubular structure and the pipe is separated by at least one thermal insulator or is separated mutually. Moreover, the vacuum jacketed tube may be mechanically connected to the source/destination of the delivered fluid, even other vacuum jacketed tube, through the bellows and/or the rotary joint. Besides, the pipe may be surrounded by a Teflon bellows and the tubular structure may be surrounded by a steel bellows, so as to further reduce the heat transferred into/away the fluid delivered inside the pipe.

Abstract: A readout circuit includes a comparator coupled to receive a ramp signal an output of a dual conversion gain pixel. A single counter is coupled to the output of the comparator. The counter is coupled to write to only one of a first or a second memory circuits at a time. A first multiplexor is coupled to load either an initial value or an initial memory value from the first memory circuit into the counter. A second multiplexor is coupled to load either a low conversion gain memory value from the first memory circuit or a high conversion gain memory value from the second memory circuit into a single data transmitter, which is coupled to transmit the received memory value to a digital processor.

Abstract: A semiconductor structure includes: a channel layer; an active layer over the channel layer, wherein the active layer is configured to form a two-dimensional electron gas (2DEG) to be formed in the channel layer along an interface between the channel layer and the active layer; a gate electrode over a top surface of the active layer; and a source/drain electrode over the top surface of the active layer; wherein the active layer includes a first layer and a second layer sequentially disposed therein from the top surface to a bottom surface of the active layer, and the first layer possesses a higher aluminum (Al) atom concentration compared to the second layer. An HEMT structure and an associated method are also disclosed.

Abstract: The present invention provides a scroll wheel module with a touch sensing mechanism, where the scroll wheel module includes a scroll wheel body, a touch sensing element, and an encoding element; the scroll wheel body is pivotally connected to a housing, and the middle of the scroll wheel body is provided with a cavity; the touch sensing element is installed in the cavity; the touch sensing element includes a connecting portion and a fixing portion; the connecting portion is pivotally connected to the scroll wheel body; the fixing portion is connected to the housing; and the encoding element is connected to the scroll wheel body. In this way, an effect of arbitrarily switching different function modes to be adjusted is achieved.

Abstract: The invention provides a bio-detection device, including a carrier, a plurality of spacers, an electronic circuit, and a package layer, wherein an open platform is formed. The carrier includes a test region and a signal transmission wiring, wherein the test region is configured to carry a fluid under test. The spacers are located on the test region and electrically connected to two different voltage levels to form a capacitor for sensing a capacitance of the fluid. The spacers are connected to the signal transmission wiring. The electronic circuit receives and processes a sensing signal corresponding to the capacitance of the fluid. The package layer covers a portion of the carrier but does not cover the test region. The open platform is formed whereby a user can easily put in the fluid. The open platform has a bottom which includes the test region, and an area of the open platform is defined by the spacers and the package layer.

Abstract: A readout circuit includes a comparator coupled to receive a ramp signal an output of a dual conversion gain pixel. A single counter is coupled to the output of the comparator. The counter is coupled to write to only one of a first or a second memory circuits at a time. A first multiplexor is coupled to load either an initial value or an initial memory value from the first memory circuit into the counter. A second multiplexor is coupled to load either a low conversion gain memory value from the first memory circuit or a high conversion gain memory value from the second memory circuit into a single data transmitter, which is coupled to transmit the received memory value to a digital processor.

Abstract: A semiconductor device with reinforced gate spacers and a method of fabricating the same. The semiconductor device includes low-k dielectric gate spacers adjacent to a gate structure. A high-k dielectric material is disposed over an upper surface of the low-k dielectric gate spacers to prevent unnecessary contact between the gate structure and a self-aligned contact structure. The high-k dielectric material may be disposed, if desired, over an upper surface of the gate structure to provide additional isolation of the gate structure from the self-aligned contact structure.

Abstract: The present invention relates to a mouse, including a base, a cover plate provided with a hole, a circuit board, a button switch, an elastic cover, and an upper cover. The cover plate covers the base, and the circuit board is disposed on the base and located between the base and the cover plate. The button switch is disposed on the circuit board. The elastic cover covers the button switch, and extends into the hole together with the button switch, so as to prevent the button switch from being exposed out of the hole. The upper cover covers the cover plate, and the upper cover is capable of oscillating relative to the cover plate to abut against the elastic cover, so as to trigger the button switch.

Abstract: A high resistance virtual anode for an electroplating cell includes a first layer and a second layer. The first layer includes a plurality of first holes through the first layer. The second layer is over the first layer and includes a plurality of second holes through the second layer.

Abstract: A high resistance virtual anode for an electroplating cell includes a first layer and a second layer. The first layer includes a plurality of first holes through the first layer. The second layer is over the first layer and includes a plurality of second holes through the second layer.

Abstract: An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.

Abstract: The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode.

Abstract: A process control method is provided for ion implantation methods and apparatuses, to produce a high dosage area on a substrate such as may compensate for noted non-uniformities. In an ion implantation tool, separately controllable electrodes are provided as multiple sets of opposed electrodes disposed outside an ion beam. Beam blockers are positionable into the ion beam. Both the electrodes and beam blockers are controllable to reduce the area of the ion beam that is incident upon a substrate. The electrodes and beam blockers also change the position of the reduced-area ion beam incident upon the surface. The speed at which the substrate scans past the ion beam may be dynamically changed during the implantation process to produce various dosage concentrations in the substrate.

Abstract: A high resistance virtual anode for an electroplating cell includes a first layer and a second layer. The first layer includes a plurality of first holes through the first layer. The second layer is over the first layer and includes a plurality of second holes through the second layer.

Abstract: An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.

Abstract: A method comprises placing a wafer and a ring-shaped beam profiler on a wafer holder, wherein the ring-shaped beam profiler is adjacent to the wafer, moving a first sensor and a second sensor simultaneously with the wafer holder, receiving a first sensed signal and a second sensed signal from the first sensor and the second sensor respectively and adjusting an ion beam generated by an ion beam generator based upon the first sensed signal and the second sensed signal.

Abstract: A device includes: a substrate; and a doped III-V compound layer disposed over the substrate; wherein: the doped III-V compound layer includes an upper boundary; the upper boundary has a micro-roughened texture and a macro-roughened texture where the micro-roughened texture located on; and the upper boundary includes dopant ions that are not present in a remainder of the doped III-V compound layer underneath the upper boundary.