Abstract: In an embodiment, a system, includes: a first pressurized load port interfaced with a workstation body; a second pressurized load port interfaced with the workstation body; the workstation body maintained at a set pressure level, wherein the workstation body comprises an internal material handling system configured to move a semiconductor workpiece within the workstation body between the first and second pressurized load ports at the set pressure level; a first modular tool interfaced with the first pressurized load port, wherein the first modular tool is configured to process the semiconductor workpiece; and a second modular tool interfaced with the second pressurized load port, wherein the second modular tool is configured to inspect the semiconductor workpiece processed by the first modular tool.

Abstract: An insertion device includes an upper casing, an insertion module and a lower casing. The insertion module is disposed in the upper casing, and includes a main body assembly, an insertion seat, a first elastic member, a retraction seat and a second elastic member. When the upper casing is depressed, the insertion seat is driven by the first elastic member to perform an automatic-insertion operation, such that limiting structure between the insertion seat and the retraction seat collapses upon the collapse of another limiting structure between the insertion seat and the main body assembly, and that the retraction seat is driven by the second elastic member to perform an automatic-retraction operation.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: A display may include an array of pixels. A pixel can include an organic light-emitting diode, up to three thin-film transistors, and up to two capacitors. The pixel can include a drive transistor, an emission transistor, and a select transistor. The select transistor can be used to apply a reference voltage to the gate of the drive transistor during a global reset phase and during a global threshold voltage sampling phase and can also be used to apply a data voltage to the gate of the drive transistor during a data programming phase. The drive transistor can receive a power supply voltage that toggles between a low voltage during the global reset phase and a high voltage during other phases of operation. Configured and operated in this way, the pixel need not include separate dedicated anode reset and initialization transistors.

Abstract: A method for forming a semiconductor device is provided. The method includes forming a plurality of first channel nanostructures and a plurality of second channel nanostructures in an n-type device region and a p-type device region of a substrate, respectively, and sequentially depositing a gate dielectric layer, an n-type work function metal layer, and a cap layer surrounding each of the first and second channel nanostructures. The cap layer merges in first spaces between adjacent first channel nanostructures and merges in second spaces between adjacent second channel nanostructures. The method further includes selectively removing the cap layer and the n-type work function metal layer in the p-type device region, and depositing a p-type work function metal layer over the cap layer in the n-type device region and the gate dielectric layer in the p-type device region. The p-type work function metal layer merges in the second spaces.

Abstract: A transmission device with a phase-adjustment function includes a first dielectric layer, a signal line, a ground plane, and a first parasitic element. The first dielectric layer has a first surface and a second surface which are opposite to each other. The signal line is disposed on the first surface of the first dielectric layer. The ground plane is disposed on the second surface of the first dielectric layer. The first parasitic element is coupled to a first connection point on the signal line. The first parasitic element is configured to provide a first delay phase.

Abstract: An elastic physiological patch includes a patch assembly and an implant assembly. The patch assembly includes an electronic device, and a soft patch body defining a chamber for receiving the electronic device. The implant assembly is mountable to the electronic device and includes an implant which is capable of being driven to partially pass through the patch body and which is adapted to be implanted in the skin of a subject. The implant and the patch body cooperatively seal the chamber.

Abstract: An antenna system includes a signal feeding element, a first antenna element, a second antenna element, a first transmission line, and a second transmission line. The first antenna element is coupled to a first connection point. The second antenna element is coupled to a second connection point. The first transmission line is coupled between the signal feeding element and the first connection point. The second transmission line is coupled between the signal feeding element and the second connection point. The length of the second transmission line is substantially equal to that of the first transmission line. The first antenna element and the second antenna element substantially have opposite polarization directions. Therefore, the radiation pattern of the antenna system can provide a plurality of different gain peaks.

Abstract: An antenna system with switchable radiation gain includes a signal feeding element, a first antenna element, a second antenna element, a first diode, a first switch element, a second switch element, a first impedance transformer, and a second impedance transformer. The first antenna element is coupled to a first connection point. The second antenna element is coupled to a second connection point. The first diode has an anode coupled to the first connection point, and a cathode coupled to the second connection point. The first switch element and the second switch element are configured to select either the first impedance transformer or the second impedance transformer as a first target transformer, and the selected first target transformer is coupled between the first connection point and the signal feeding element.

Abstract: An antenna system includes a signal feeding element, a first antenna element, a second antenna element, a first selection circuit, a second selection circuit, a first transmission line, a second transmission line, a third transmission line, a fourth transmission line, a fifth transmission line, and a sixth transmission line. The first selection circuit selects one of the first transmission line, the second transmission line, and the third transmission line as a first target transmission line. The selected first target transmission line is coupled between a third connection point and a first connection point. The second selection circuit selects one of the fourth transmission line, the fifth transmission line, and the sixth transmission line as a second target transmission line. The selected second target transmission line is coupled between a fourth connection point and a second connection point.

Abstract: The present disclosure a bandwidth allocation method including steps of: (a) providing a base station and a user equipment, wherein the base station provides a plurality of bandwidth parts for the user equipment within a service area; (b) selecting a bandwidth part from the plurality of bandwidth parts as a reference bandwidth part and utilizing the base station to transmit a reference signal through the reference bandwidth part; (c) utilizing the user equipment to receive the reference bandwidth part and output a channel report according to a channel status of the reference bandwidth part, wherein the channel report includes a channel quality indication; (d) determining whether the channel quality indication is greater than a first critical value, performing a step (e) when the determination result is not satisfied; and (e) instructing the user equipment to switch to a bandwidth part with a smaller frequency band as the reference bandwidth part.

Abstract: An antenna system includes a first antenna element, a second antenna element, a dielectric substrate, a first reflective plate, and a second reflective plate. The first antenna element and the second antenna element are disposed on the dielectric substrate. The first reflective plate is adjacent to the dielectric substrate. The second reflective plate is coupled to the first reflective plate. A first angle is formed between the first reflective plate and the second reflective plate. The antenna system provides a relative large HPBW (Half-Power Beamwidth).

Abstract: An antenna structure includes a loop radiation element, a balance radiation element, a first additional radiation element, and a second additional radiation element. The loop radiation element has a first feeding point. The balance radiation element has a second feeding point. The balance radiation element is coupled to at least a first connection point on the loop radiation element. The balance radiation element is substantially surrounded by the loop radiation element. The first additional radiation element is coupled to a second connection point on the loop radiation element. The second additional radiation element is coupled to a third connection point on the loop radiation element. The loop radiation element is disposed between the first additional radiation element and the second additional radiation element.

Abstract: An antenna structure includes a ground element, a first radiation element, a second radiation element, a dielectric substrate, a first feeding element, a second feeding element, a third feeding element, and a fourth radiation element. The dielectric substrate has a first surface and a second surface. The first radiation element is disposed on the first surface. The second radiation element is adjacent to the first radiation element, and is separate from the first radiation element. The first feeding element has a first feeding port, and is coupled to the first radiation element. The second feeding element has a second feeding port, and is coupled to the first radiation element. The third feeding element has a third feeding port, and is coupled to the first radiation element. The fourth feeding element has a fourth feeding port, and is coupled to the first radiation element.

Abstract: A dipole antenna includes a first conductor, a second conductor, a first radiation element, and a second radiation element. The first conductor has a first feeding point. The second conductor has a second feeding point. The first radiation element is coupled to the first conductor. The second radiation element is coupled to the second conductor. The dipole antenna covers an operation frequency band. The first radiation element at least includes a first meandering structure. The first meandering structure is configured to suppress the frequency multiplication resonance with respect to the operation frequency band.

Abstract: An antenna structure includes a loop radiation element, a balance radiation element, a first additional radiation element, and a second additional radiation element. The loop radiation element has a first feeding point. The balance radiation element has a second feeding point. The balance radiation element is coupled to at least a first connection point on the loop radiation element. The balance radiation element is substantially surrounded by the loop radiation element. The first additional radiation element is coupled to a second connection point on the loop radiation element. The second additional radiation element is coupled to a third connection point on the loop radiation element. The loop radiation element is disposed between the first additional radiation element and the second additional radiation element.

Abstract: A dipole antenna includes a first conductor, a second conductor, a first radiation element, and a second radiation element. The first conductor has a first feeding point. The second conductor has a second feeding point. The first radiation element is coupled to the first conductor. The second radiation element is coupled to the second conductor. The dipole antenna covers an operation frequency band. The first radiation element at least includes a first meandering structure. The first meandering structure is configured to suppress the frequency multiplication resonance with respect to the operation frequency band.

Abstract: An antenna structure includes a main radiation element, a first feeding element, a first additional radiation element, a dielectric substrate, and a ground plane. A first signal source is coupled through the first feeding element to a first side of the main radiation element. The first additional radiation element is coupled to a second side of the main radiation element. A first slot is formed between the first additional radiation element and the main radiation element. The second side is different from the first side. The dielectric substrate has a first surface and a second surface which are opposite to each other. The main radiation element, the first feeding element, and the first additional radiation element are disposed on the first surface of the dielectric substrate. The ground plane is adjacent to the second surface of the dielectric substrate.

Abstract: A communication system with a first input port and a second input port includes a first antenna, a second antenna, a first diplexer, a second diplexer, a third diplexer, a fourth diplexer, a first coupler, and a second coupler. The first diplexer has a common terminal coupled to the first input port. The second diplexer has a common terminal coupled to the second input port. The third diplexer has a common terminal coupled to the first antenna. The fourth diplexer has a common terminal coupled to the second antenna. Each of the first diplexer, the second diplexer, the third diplexer, and the fourth diplexer has a first terminal and a second terminal which are coupled between the first coupler and the second coupler.