Abstract: A method of fabricating a laser diode with a reflective layer which is applied to an epitaxial structure of the laser diode where initially the laser diode is placed in a coating device. The laser diode is then coated with additional layers of insulation, metal and a protective layer. A rapid thermal annealing process is applied to the layered laser diode. The insulation layer, metal layer and protective layer form a reflective structure on one side of the laser diode.

Abstract: Calibrated particle analysis apparatus and method are provided. In the calibrated particle analysis apparatus, a gas exchange device and several flow controllers are disposed in front of a particle analyzer. Therefore, when the calibrated particle analysis apparatus is used, gases of a sample can be exchanged with a carrier gas suggested to be used with the particle analyzer. Hence, the accuracy of analyzing the particles can be increased, and possible hazards from dangerous or toxic materials can be avoided.

Abstract: Calibrated particle analysis apparatus and method are provided. In the calibrated particle analysis apparatus, a gas exchange device and several flow controllers are disposed in front of a particle analyzer. Therefore, when the calibrated particle analysis apparatus is used, gases of a sample can be exchanged with a carrier gas suggested to be used with the particle analyzer. Hence, the accuracy of analyzing the particles can be increased, and possible hazards from dangerous or toxic materials can be avoided.

Abstract: An apparatus for on-line monitoring particle contamination in special gas includes a single particle inductively coupled plasma mass spectrometry (sp-ICPMS) and a gas exchange device (GED). The gas exchange device is coupled to the sp-ICPMS. The gas exchange device includes a corrosion resistant outer tube and a polytetrafluoroethylene (PTFE) inner tube. A gap is formed between the corrosion resistant outer tube and the PTFE inner tube. The length of the PTFE inner tube is 1 meter or more. The argon gas flows in the gap, and the special gas flow in the PTFE inner tube.

Abstract: The present disclosure provides a solar cell device. The device has solar cells having multijunction. A supplemental current source is connected with one of the solar cells having a smallest current in the device. Thus, through providing required current by the supplemental current source, usage performance of the device is enhanced.

Abstract: A method for making semiconductor electrodes includes provided a wafer. The wafer includes at least one conductive unit, a plurality of first connective units connected to the conductive unit, a plurality of first metal layers connected to the first connective units and a plurality of second connective units connected to the first metal layers. Photo-resist is provided on the first and second connective units. A second metal layer is provided on each of the first metal layers via using an electroplating device. The wafer is cut through the photo-resist, thus forming semiconductor electrodes.

Abstract: There is disclosed a method for coating an electrode on a wafer. Firstly, there is provided a wafer. Secondly, a metal area is defined in an upper surface of the wafer. Thirdly, the metal area is roughened via etching. Finally, an electrode is coated on the metal area via deposition.