Patents by Inventor Chun-Lung Chang

Chun-Lung Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11944412
    Abstract: A blood pressure detection device manufactured by a semiconductor process includes a substrate, a microelectromechanical element, a gas-pressure-sensing element, a driving-chip element, an encapsulation layer and a valve layer. The substrate includes inlet apertures. The microelectromechanical element and the gas-pressure-sensing element are stacked and integrally formed on the substrate. The encapsulation layer is encapsulated and positioned on the substrate. A flowing-channel space is formed above the microelectromechanical element and the gas-pressure-sensing element. The encapsulation layer includes an outlet aperture in communication with an airbag. The driving-chip element controls the microelectromechanical element, the gas-pressure-sensing element and valve units to transport gas.
    Type: Grant
    Filed: June 2, 2021
    Date of Patent: April 2, 2024
    Assignee: MICROJET TECHNOLOGY CO., LTD.
    Inventors: Hao-Jan Mou, Ying-Lun Chang, Ching-Sung Lin, Chi-Feng Huang, Yung-Lung Han, Chang-Yen Tsai, Wei-Ming Lee, Chun-Yi Kuo, Tsung-I Lin
  • Publication number: 20240071981
    Abstract: A method of fabricating a semiconductor structure includes the following steps. A semiconductor wafer is provided. A plurality of first surface mount components and a plurality of second surface mount components are bonded onto the semiconductor wafer, wherein a first portion of each of the second surface mount components is overhanging a periphery of the semiconductor wafer. A first barrier structure is formed in between the second surface mount components and the semiconductor wafer. An underfill structure is formed under a second portion of each of the second surface mount components, wherein the first barrier structure blocks the spreading of the underfill structure from the second portion to the first portion.
    Type: Application
    Filed: November 1, 2023
    Publication date: February 29, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Mao-Yen Chang, Chih-Wei Lin, Hao-Yi Tsai, Kuo-Lung Pan, Chun-Cheng Lin, Tin-Hao Kuo, Yu-Chia Lai, Chih-Hsuan Tai
  • Publication number: 20220336588
    Abstract: A high voltage device includes: a semiconductor layer, a well, a body region, a body contact, a gate, a source, and a drain. The body cofntact is configured as an electrical contact of the body region. The body contact and the source overlap with each other to define an overlap region. The body contact has a depth from an upper surface of the semiconductor layer, wherein the depth is deeper than a depth of the source, whereby a part of the body contact is located vertically below the overlap region. A length of the overlap region in a channel direction is not shorter than a predetermined length, so as to suppress a parasitic bipolar junction transistor from being turning on when the high voltage device operates, wherein the parasitic bipolar junction transistor is formed by a part of the well, a part of the body region and a part of the source.
    Type: Application
    Filed: April 11, 2022
    Publication date: October 20, 2022
    Inventors: Chih-Wen Hsiung, Chun-Lung Chang, Kun-Huang Yu, Kuo-Chin Chiu, Wu-Te Weng
  • Publication number: 20220223733
    Abstract: A high voltage device includes: a semiconductor layer, a well region, a shallow trench isolation region, a drift oxide region, a body region, a gate, a source, and a drain. The drift oxide region is located on a drift region. The shallow trench isolation region is located below the drift oxide region. A part of the drift oxide region is located vertically above a part of the shallow trench isolation region and is in contact with the shallow trench isolation region. The shallow trench isolation region is formed between the drain and the body region.
    Type: Application
    Filed: December 10, 2021
    Publication date: July 14, 2022
    Inventors: Chun-Lung Chang, Chih-Wen Hsiung, Kun-Huang Yu, Kuo-Chin Chiu, Wu-Te Weng, Chien-Wei Chiu, Ta-Yung Yang
  • Publication number: 20220223464
    Abstract: A high voltage device includes: a semiconductor layer, a well, a bulk region, a gate, a source, and a drain. The bulk region is formed in the semiconductor layer and contacts the well region along a channel direction. A portion of the bulk region is vertically below and in contact with the gate, to provide an inversion region of the high voltage device when the high voltage device is in conductive operation. A portion of the well lies between the bulk region and the drain, to separate the bulk region from the drain. A first concentration peak region of an impurities doping profile of the bulk region is vertically below and in contact with the source. A concentration of a second conductivity type impurities of the first concentration peak region is higher than that of other regions in the bulk region.
    Type: Application
    Filed: December 10, 2021
    Publication date: July 14, 2022
    Inventors: Kun-Huang Yu, Chien-Yu Chen, Ting-Wei Liao, Chih-Wen Hsiung, Chun-Lung Chang, Kuo-Chin Chiu, Wu-Te Weng, Chien-Wei Chiu, Yong-Zhong Hu, Ta-Yung Yang
  • Publication number: 20220157982
    Abstract: A high voltage device for use as an up-side switch of a power stage circuit includes: at least one lateral diffused metal oxide semiconductor (LDMOS) device, a second conductivity type isolation region and at least one Schottky barrier diode (SBD). The LDMOS device includes: a well formed in a semiconductor layer, a body region, a gate, a source and a drain. The second conductivity type isolation region is formed in the semiconductor layer and is electrically connected to the body region. The SBD includes: a Schottky metal layer formed on the semiconductor layer and a Schottky semiconductor layer formed in the semiconductor layer. The Schottky semiconductor layer and the Schottky metal layer form a Schottky contact. In the semiconductor layer, the Schottky semiconductor layer is adjacent to and in contact with the second conductivity type isolation region.
    Type: Application
    Filed: October 20, 2021
    Publication date: May 19, 2022
    Inventors: Kuo-Chin Chiu, Ta-Yung Yang, Chien-Wei Chiu, Wu-Te Weng, Chien-Yu Chen, Chih-Wen Hsiung, Chun-Lung Chang, Kun-Huang Yu, Ting-Wei Liao
  • Publication number: 20210074851
    Abstract: The present invention provides a high voltage device and a manufacturing method thereof. The high voltage device includes: a semiconductor layer, a drift oxide region, a well, a body region, a gate, at least one sub-gate, a source, and a drain. The drift oxide region is located on a drift region in an operation region. The sub-gate is formed on the drift oxide region right above the drift region. The sub-gate is parallel with the gate. A conductive layer of the gate has a first conductivity type, and a conductive layer of the sub-gate has a second conductivity type or is an intrinsic semiconductor structure.
    Type: Application
    Filed: May 6, 2020
    Publication date: March 11, 2021
    Inventors: Chien-Wei Chiu, Ta-Yung Yang, Wu-Te Weng, Chien-Yu Chen, Kun-Huang Yu, Chih-Wen Hsiung, Kuo-Chin Chiu, Chun-Lung Chang
  • Patent number: 9899538
    Abstract: The present invention provides a non-volatile memory device, including a source region and a drain region, a channel region, a floating gate, an enhance hot carrier (hole or electron) injection gate and an erasing gate. The floating gate is disposed on the channel region and the source region and a first dielectric layer is disposed therebetween. The enhance hot carrier injection gate is disposed on the floating gate and the substrate wherein the enhance hot carrier injection gate has an L-shape cross-section. A second dielectric layer is disposed between the enhance hot carrier injection gate and the floating gate, and a fourth dielectric layer is disposed between the enhance hot carrier injection gate and the substrate. The erasing gate is disposed on the drain region. A third dielectric layer is disposed between the erasing gate and the substrate.
    Type: Grant
    Filed: May 10, 2017
    Date of Patent: February 20, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chun-Lung Chang, Tien-Fan Ou
  • Patent number: 9349815
    Abstract: A gate structure is provided. The gate structure includes a substrate, a gate disposed on the substrate and a gate dielectric layer disposed between the substrate and the gate, wherein the gate dielectric layer is in the shape of a barbell. The barbell has a thin center connecting to two bulging ends. Part of the bulging ends extends into the gate and the substrate.
    Type: Grant
    Filed: September 17, 2014
    Date of Patent: May 24, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Kuan-Yi Tseng, Tzu-Ping Chen, Chun-Lung Chang, Chih-Haw Lee, Wei-Shiang Huang, Chien-Hung Chen
  • Publication number: 20160079380
    Abstract: A gate structure is provided. The gate structure includes a substrate, a gate disposed on the substrate and a gate dielectric layer disposed between the substrate and the gate, wherein the gate dielectric layer is in the shape of a barbell. The barbell has a thin center connecting to two bulging ends. Part of the bulging ends extends into the gate and the substrate.
    Type: Application
    Filed: September 17, 2014
    Publication date: March 17, 2016
    Inventors: Kuan-Yi Tseng, Tzu-Ping Chen, Chun-Lung Chang, Chih-Haw Lee, Wei-Shiang Huang, Chien-Hung Chen
  • Patent number: 9286533
    Abstract: The present invention provides a method for image recombination of a plurality of images and image identification and a system for image acquiring and identification. Features with respect to the plurality of images are recombined and enhanced so as to form a recombined image. After that, the recombined image is processed to emphasize the features of the recombined image so that the recombined image is capable of being identified easily. Furthermore, the present provides a system to perform the foregoing method, whereby reducing unidentified problems caused due to low quality image of the monitoring system.
    Type: Grant
    Filed: December 5, 2014
    Date of Patent: March 15, 2016
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Ya-Hui Tsai, Kuo-Tang Huang, Chun-Lung Chang, Lai-Sheng Chen
  • Patent number: 9046496
    Abstract: A capturing method for a plurality of images with different view-angles and a capturing system using the same are provided. The capturing method for the images with different view-angles includes the following steps. An appearance image of an object is captured by an image capturing unit at a capturing angle. A light reflection area of the appearance image is detected by a detecting unit, and a dimension characteristic of the light reflection area is analyzed by the same. Whether the dimension characteristic of the light reflection area is larger than a first predetermined value is determined. If the dimension characteristic of the light reflection area is larger than the first predetermined value, then the capturing angle is adjusted within a first adjusting range. After the step of adjusting the capturing angle within a first adjusting range is performed, the step of capturing the appearance image is performed again.
    Type: Grant
    Filed: February 10, 2012
    Date of Patent: June 2, 2015
    Assignee: Industrial Technology Research Institute
    Inventors: Ya-Hui Tsai, Kuo-Tang Huang, Chin-Kuei Chang, Chun-Lung Chang
  • Publication number: 20150086135
    Abstract: The present invention provides a method for image recombination of a plurality of images and image identification and a system for image acquiring and identification. Features with respect to the plurality of images are recombined and enhanced so as to form a recombined image. After that, the recombined image is processed to emphasize the features of the recombined image so that the recombined image is capable of being identified easily. Furthermore, the present provides a system to perform the foregoing method, whereby reducing unidentified problems caused due to low quality image of the monitoring system.
    Type: Application
    Filed: December 5, 2014
    Publication date: March 26, 2015
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Ya-Hui TSAI, Kuo-Tang HUANG, Chun-Lung CHANG, Lai-Sheng CHEN
  • Publication number: 20150008504
    Abstract: A non-volatile memory structure includes a substrate, a gate electrode formed on the substrate, conductive spacers respectively formed on two sides of the gate electrode, and an oxide-nitride-oxide (ONO) structure having an inverted T shape formed on the substrate. The gate electrode includes a gate conductive layer and a gate dielectric layer. The ONO structure includes a base portion and a body portion. The base portion of the ONO structure is sandwiched between the gate electrode and the substrate, and between the conductive spacer and the substrate. The body portion of the T-shaped ONO structure is upwardly extended from the base portion and sandwiched between the gate electrode and the conductive spacer.
    Type: Application
    Filed: July 5, 2013
    Publication date: January 8, 2015
    Inventors: Chun-Lung Chang, Tzu-Ping Chen, Chih-Haw Lee, Kuan-Yi Tseng, Chih-Jung Chen, Chien-Hung Chen
  • Patent number: 8391560
    Abstract: The present invention provides a method and a system for image identification and identification result output, which determines a location coordinate with respect to an image and a rotating angle based on at least one direction of the image according to features of the image. The image is compared to a plurality of sample images stored in a database according to the rotating angle so as to obtain at least one identification result. By means of the method and the system of the present invention, identification can be achieved with respect to various rotating angles and distances so as to improve the identification rate.
    Type: Grant
    Filed: July 30, 2009
    Date of Patent: March 5, 2013
    Assignee: Industrial Technology Research Institute
    Inventors: Ya-Hui Tsai, Yu-Ting Lin, Kuo-Tang Huang, Chun-Lung Chang, Tung-Chuan Wu
  • Patent number: 8391559
    Abstract: The present invention provides a method and system for image identification and identification result output, wherein a feature image under identification acquired from an image is compared with a plurality of sample images respectively stored in a database so as to obtain a plurality of similarity indexes associated with the plurality of sample images respectively. Each similarity index represents similarity between the feature image and the corresponding sample image. Thereafter, the plurality of similarity indexes are sorted and then a least one of comparison results is output. The present invention is further capable of being used for identifying identification marks with respect to a carrier. By sorting the similarity index with respect to each feature forming the identification marks, it is capable of outputting many sets of combinations corresponding to the identification marks so as to improve speed for targeting suspected carrier and enhance the identification efficiency.
    Type: Grant
    Filed: July 30, 2009
    Date of Patent: March 5, 2013
    Assignee: Industrial Technology Research Institute
    Inventors: Ya-Hui Tsai, Kuo-Tang Huang, Yu-Ting Lin, Chun-Lung Chang, Tung-Chuan Wu
  • Publication number: 20120249753
    Abstract: A capturing method for a plurality of images with different view-angles and a capturing system using the same are provided. The capturing method for the images with different view-angles includes the following steps. An appearance image of an object is captured by an image capturing unit at a capturing angle. A light reflection area of the appearance image is detected by a detecting unit, and a dimension characteristic of the light reflection area is analyzed by the same. Whether the dimension characteristic of the light reflection area is larger than a first predetermined value is determined. If the dimension characteristic of the light reflection area is larger than the first predetermined value, then the capturing angle is adjusted within a first adjusting range. After the step of adjusting the capturing angle within a first adjusting range is performed, the step of capturing the appearance image is performed again.
    Type: Application
    Filed: February 10, 2012
    Publication date: October 4, 2012
    Inventors: Ya-Hui Tsai, Kuo-Tang Huang, Chin-Kuei Chang, Chun-Lung Chang
  • Patent number: 7910256
    Abstract: The present invention provides a method for supplying fuel to a fuel cell, in which a monitoring period is determined for monitoring the fuel cell, and then a feeding amount of fuel is determined by integrating characteristic value generated from the fuel cell in the monitoring period. In another embodiment, it is further comprising a step of determining the variation profile associated with the characteristic value during the period so as to judge whether it is necessary to feed the fuel into the fuel cell or not. By means of the present invention, the supplying of fuel to the fuel cell under dynamic loadings can be effectively controlled for optimizing the performance of the fuel cell as well as reducing the cost without installing any fuel sensor.
    Type: Grant
    Filed: September 10, 2008
    Date of Patent: March 22, 2011
    Assignee: Institute of Nuclear Energy Research Atomic Energy Council, Executive Yuan
    Inventors: Charn-Ying Chen, Chun-Lung Chang, Der-Hsing Liou, Chih-Yuan Hsu, Rui-Xiang Wang
  • Publication number: 20100278436
    Abstract: The present invention provides a method and a system for image identification and identification result output, which determines a location coordinate with respect to an image and a rotating angle based on at least one direction of the image according to features of the image. The image is compared to a plurality of sample images stored in a database according to the rotating angle so as to obtain at least one identification result. By means of the method and the system of the present invention, identification can be achieved with respect to various rotating angles and distances so as to improve the identification rate.
    Type: Application
    Filed: July 30, 2009
    Publication date: November 4, 2010
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Ya-Hui Tsai, Yu-Ting Lin, Kuo-Tang Huang, Chun-Lung Chang, Tung-Chuan Wu
  • Publication number: 20100278389
    Abstract: The present invention provides a method for image recombination of a plurality of images and image identification and a system for image acquiring and identification. Features with respect to the plurality of images are recombined and enhanced so as to form a recombined image. After that, the recombined image is processed to emphasize the features of the recombined image so that the recombined image is capable of being identified easily. Furthermore, the present provides a system to perform the foregoing method, whereby reducing unidentified problems caused due to low quality image of the monitoring system.
    Type: Application
    Filed: July 30, 2009
    Publication date: November 4, 2010
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Ya-Hui Tsai, Kuo-Tang Huang, Chun-Lung Chang, Lai-Sheng Chen