Patents by Inventor Chun-Lung Chang
Chun-Lung Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12136650Abstract: A high voltage device includes: a semiconductor layer, a well, a body region, a body contact, a gate, a source, and a drain. The body contact is configured as an electrical contact of the body region. The body contact and the source overlap with each other to define an overlap region. The body contact has a depth from an upper surface of the semiconductor layer, wherein the depth is deeper than a depth of the source, whereby a part of the body contact is located vertically below the overlap region. A length of the overlap region in a channel direction is not shorter than a predetermined length, so as to suppress a parasitic bipolar junction transistor from being turning on when the high voltage device operates, wherein the parasitic bipolar junction transistor is formed by a part of the well, a part of the body region and a part of the source.Type: GrantFiled: April 11, 2022Date of Patent: November 5, 2024Assignee: RICHTEK TECHNOLOGY CORPORATIONInventors: Chih-Wen Hsiung, Chun-Lung Chang, Kun-Huang Yu, Kuo-Chin Chiu, Wu-Te Weng
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Publication number: 20240297067Abstract: A high voltage device includes: a semiconductor layer, a well, a bulk region, a gate, a source, and a drain. The bulk region is formed in the semiconductor layer and contacts the well region along a channel direction. A portion of the bulk region is vertically below and in contact with the gate, to provide an inversion region of the high voltage device when the high voltage device is in conductive operation. A portion of the well lies between the bulk region and the drain, to separate the bulk region from the drain. A first concentration peak region of an impurities doping profile of the bulk region is vertically below and in contact with the source. A concentration of a second conductivity type impurities of the first concentration peak region is higher than that of other regions in the bulk region.Type: ApplicationFiled: May 15, 2024Publication date: September 5, 2024Inventors: Kun-Huang Yu, Chien-Yu Chen, Ting-Wei Liao, Chih-Wen Hsiung, Chun-Lung Chang, Kuo-Chin Chiu, Wu-Te Weng, Chien-Wei Chiu, Yong-Zhong Hu, Ta-Yung Yang
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Patent number: 12062570Abstract: A high voltage device includes: a semiconductor layer, a well, a bulk region, a gate, a source, and a drain. The bulk region is formed in the semiconductor layer and contacts the well region along a channel direction. A portion of the bulk region is vertically below and in contact with the gate, to provide an inversion region of the high voltage device when the high voltage device is in conductive operation. A portion of the well lies between the bulk region and the drain, to separate the bulk region from the drain. A first concentration peak region of an impurities doping profile of the bulk region is vertically below and in contact with the source. A concentration of a second conductivity type impurities of the first concentration peak region is higher than that of other regions in the bulk region.Type: GrantFiled: December 10, 2021Date of Patent: August 13, 2024Assignee: RICHTEK TECHNOLOGY CORPORATIONInventors: Kun-Huang Yu, Chien-Yu Chen, Ting-Wei Liao, Chih-Wen Hsiung, Chun-Lung Chang, Kuo-Chin Chiu, Wu-Te Weng, Chien-Wei Chiu, Yong-Zhong Hu, Ta-Yung Yang
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Publication number: 20220336588Abstract: A high voltage device includes: a semiconductor layer, a well, a body region, a body contact, a gate, a source, and a drain. The body cofntact is configured as an electrical contact of the body region. The body contact and the source overlap with each other to define an overlap region. The body contact has a depth from an upper surface of the semiconductor layer, wherein the depth is deeper than a depth of the source, whereby a part of the body contact is located vertically below the overlap region. A length of the overlap region in a channel direction is not shorter than a predetermined length, so as to suppress a parasitic bipolar junction transistor from being turning on when the high voltage device operates, wherein the parasitic bipolar junction transistor is formed by a part of the well, a part of the body region and a part of the source.Type: ApplicationFiled: April 11, 2022Publication date: October 20, 2022Inventors: Chih-Wen Hsiung, Chun-Lung Chang, Kun-Huang Yu, Kuo-Chin Chiu, Wu-Te Weng
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Publication number: 20220223464Abstract: A high voltage device includes: a semiconductor layer, a well, a bulk region, a gate, a source, and a drain. The bulk region is formed in the semiconductor layer and contacts the well region along a channel direction. A portion of the bulk region is vertically below and in contact with the gate, to provide an inversion region of the high voltage device when the high voltage device is in conductive operation. A portion of the well lies between the bulk region and the drain, to separate the bulk region from the drain. A first concentration peak region of an impurities doping profile of the bulk region is vertically below and in contact with the source. A concentration of a second conductivity type impurities of the first concentration peak region is higher than that of other regions in the bulk region.Type: ApplicationFiled: December 10, 2021Publication date: July 14, 2022Inventors: Kun-Huang Yu, Chien-Yu Chen, Ting-Wei Liao, Chih-Wen Hsiung, Chun-Lung Chang, Kuo-Chin Chiu, Wu-Te Weng, Chien-Wei Chiu, Yong-Zhong Hu, Ta-Yung Yang
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Publication number: 20220223733Abstract: A high voltage device includes: a semiconductor layer, a well region, a shallow trench isolation region, a drift oxide region, a body region, a gate, a source, and a drain. The drift oxide region is located on a drift region. The shallow trench isolation region is located below the drift oxide region. A part of the drift oxide region is located vertically above a part of the shallow trench isolation region and is in contact with the shallow trench isolation region. The shallow trench isolation region is formed between the drain and the body region.Type: ApplicationFiled: December 10, 2021Publication date: July 14, 2022Inventors: Chun-Lung Chang, Chih-Wen Hsiung, Kun-Huang Yu, Kuo-Chin Chiu, Wu-Te Weng, Chien-Wei Chiu, Ta-Yung Yang
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Publication number: 20220157982Abstract: A high voltage device for use as an up-side switch of a power stage circuit includes: at least one lateral diffused metal oxide semiconductor (LDMOS) device, a second conductivity type isolation region and at least one Schottky barrier diode (SBD). The LDMOS device includes: a well formed in a semiconductor layer, a body region, a gate, a source and a drain. The second conductivity type isolation region is formed in the semiconductor layer and is electrically connected to the body region. The SBD includes: a Schottky metal layer formed on the semiconductor layer and a Schottky semiconductor layer formed in the semiconductor layer. The Schottky semiconductor layer and the Schottky metal layer form a Schottky contact. In the semiconductor layer, the Schottky semiconductor layer is adjacent to and in contact with the second conductivity type isolation region.Type: ApplicationFiled: October 20, 2021Publication date: May 19, 2022Inventors: Kuo-Chin Chiu, Ta-Yung Yang, Chien-Wei Chiu, Wu-Te Weng, Chien-Yu Chen, Chih-Wen Hsiung, Chun-Lung Chang, Kun-Huang Yu, Ting-Wei Liao
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Publication number: 20210074851Abstract: The present invention provides a high voltage device and a manufacturing method thereof. The high voltage device includes: a semiconductor layer, a drift oxide region, a well, a body region, a gate, at least one sub-gate, a source, and a drain. The drift oxide region is located on a drift region in an operation region. The sub-gate is formed on the drift oxide region right above the drift region. The sub-gate is parallel with the gate. A conductive layer of the gate has a first conductivity type, and a conductive layer of the sub-gate has a second conductivity type or is an intrinsic semiconductor structure.Type: ApplicationFiled: May 6, 2020Publication date: March 11, 2021Inventors: Chien-Wei Chiu, Ta-Yung Yang, Wu-Te Weng, Chien-Yu Chen, Kun-Huang Yu, Chih-Wen Hsiung, Kuo-Chin Chiu, Chun-Lung Chang
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Patent number: 9899538Abstract: The present invention provides a non-volatile memory device, including a source region and a drain region, a channel region, a floating gate, an enhance hot carrier (hole or electron) injection gate and an erasing gate. The floating gate is disposed on the channel region and the source region and a first dielectric layer is disposed therebetween. The enhance hot carrier injection gate is disposed on the floating gate and the substrate wherein the enhance hot carrier injection gate has an L-shape cross-section. A second dielectric layer is disposed between the enhance hot carrier injection gate and the floating gate, and a fourth dielectric layer is disposed between the enhance hot carrier injection gate and the substrate. The erasing gate is disposed on the drain region. A third dielectric layer is disposed between the erasing gate and the substrate.Type: GrantFiled: May 10, 2017Date of Patent: February 20, 2018Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chun-Lung Chang, Tien-Fan Ou
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Patent number: 9349815Abstract: A gate structure is provided. The gate structure includes a substrate, a gate disposed on the substrate and a gate dielectric layer disposed between the substrate and the gate, wherein the gate dielectric layer is in the shape of a barbell. The barbell has a thin center connecting to two bulging ends. Part of the bulging ends extends into the gate and the substrate.Type: GrantFiled: September 17, 2014Date of Patent: May 24, 2016Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kuan-Yi Tseng, Tzu-Ping Chen, Chun-Lung Chang, Chih-Haw Lee, Wei-Shiang Huang, Chien-Hung Chen
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Publication number: 20160079380Abstract: A gate structure is provided. The gate structure includes a substrate, a gate disposed on the substrate and a gate dielectric layer disposed between the substrate and the gate, wherein the gate dielectric layer is in the shape of a barbell. The barbell has a thin center connecting to two bulging ends. Part of the bulging ends extends into the gate and the substrate.Type: ApplicationFiled: September 17, 2014Publication date: March 17, 2016Inventors: Kuan-Yi Tseng, Tzu-Ping Chen, Chun-Lung Chang, Chih-Haw Lee, Wei-Shiang Huang, Chien-Hung Chen
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Patent number: 9286533Abstract: The present invention provides a method for image recombination of a plurality of images and image identification and a system for image acquiring and identification. Features with respect to the plurality of images are recombined and enhanced so as to form a recombined image. After that, the recombined image is processed to emphasize the features of the recombined image so that the recombined image is capable of being identified easily. Furthermore, the present provides a system to perform the foregoing method, whereby reducing unidentified problems caused due to low quality image of the monitoring system.Type: GrantFiled: December 5, 2014Date of Patent: March 15, 2016Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ya-Hui Tsai, Kuo-Tang Huang, Chun-Lung Chang, Lai-Sheng Chen
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Patent number: 9046496Abstract: A capturing method for a plurality of images with different view-angles and a capturing system using the same are provided. The capturing method for the images with different view-angles includes the following steps. An appearance image of an object is captured by an image capturing unit at a capturing angle. A light reflection area of the appearance image is detected by a detecting unit, and a dimension characteristic of the light reflection area is analyzed by the same. Whether the dimension characteristic of the light reflection area is larger than a first predetermined value is determined. If the dimension characteristic of the light reflection area is larger than the first predetermined value, then the capturing angle is adjusted within a first adjusting range. After the step of adjusting the capturing angle within a first adjusting range is performed, the step of capturing the appearance image is performed again.Type: GrantFiled: February 10, 2012Date of Patent: June 2, 2015Assignee: Industrial Technology Research InstituteInventors: Ya-Hui Tsai, Kuo-Tang Huang, Chin-Kuei Chang, Chun-Lung Chang
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Publication number: 20150086135Abstract: The present invention provides a method for image recombination of a plurality of images and image identification and a system for image acquiring and identification. Features with respect to the plurality of images are recombined and enhanced so as to form a recombined image. After that, the recombined image is processed to emphasize the features of the recombined image so that the recombined image is capable of being identified easily. Furthermore, the present provides a system to perform the foregoing method, whereby reducing unidentified problems caused due to low quality image of the monitoring system.Type: ApplicationFiled: December 5, 2014Publication date: March 26, 2015Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ya-Hui TSAI, Kuo-Tang HUANG, Chun-Lung CHANG, Lai-Sheng CHEN
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Publication number: 20150008504Abstract: A non-volatile memory structure includes a substrate, a gate electrode formed on the substrate, conductive spacers respectively formed on two sides of the gate electrode, and an oxide-nitride-oxide (ONO) structure having an inverted T shape formed on the substrate. The gate electrode includes a gate conductive layer and a gate dielectric layer. The ONO structure includes a base portion and a body portion. The base portion of the ONO structure is sandwiched between the gate electrode and the substrate, and between the conductive spacer and the substrate. The body portion of the T-shaped ONO structure is upwardly extended from the base portion and sandwiched between the gate electrode and the conductive spacer.Type: ApplicationFiled: July 5, 2013Publication date: January 8, 2015Inventors: Chun-Lung Chang, Tzu-Ping Chen, Chih-Haw Lee, Kuan-Yi Tseng, Chih-Jung Chen, Chien-Hung Chen
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Patent number: 8391559Abstract: The present invention provides a method and system for image identification and identification result output, wherein a feature image under identification acquired from an image is compared with a plurality of sample images respectively stored in a database so as to obtain a plurality of similarity indexes associated with the plurality of sample images respectively. Each similarity index represents similarity between the feature image and the corresponding sample image. Thereafter, the plurality of similarity indexes are sorted and then a least one of comparison results is output. The present invention is further capable of being used for identifying identification marks with respect to a carrier. By sorting the similarity index with respect to each feature forming the identification marks, it is capable of outputting many sets of combinations corresponding to the identification marks so as to improve speed for targeting suspected carrier and enhance the identification efficiency.Type: GrantFiled: July 30, 2009Date of Patent: March 5, 2013Assignee: Industrial Technology Research InstituteInventors: Ya-Hui Tsai, Kuo-Tang Huang, Yu-Ting Lin, Chun-Lung Chang, Tung-Chuan Wu
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Patent number: 8391560Abstract: The present invention provides a method and a system for image identification and identification result output, which determines a location coordinate with respect to an image and a rotating angle based on at least one direction of the image according to features of the image. The image is compared to a plurality of sample images stored in a database according to the rotating angle so as to obtain at least one identification result. By means of the method and the system of the present invention, identification can be achieved with respect to various rotating angles and distances so as to improve the identification rate.Type: GrantFiled: July 30, 2009Date of Patent: March 5, 2013Assignee: Industrial Technology Research InstituteInventors: Ya-Hui Tsai, Yu-Ting Lin, Kuo-Tang Huang, Chun-Lung Chang, Tung-Chuan Wu
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Publication number: 20120249753Abstract: A capturing method for a plurality of images with different view-angles and a capturing system using the same are provided. The capturing method for the images with different view-angles includes the following steps. An appearance image of an object is captured by an image capturing unit at a capturing angle. A light reflection area of the appearance image is detected by a detecting unit, and a dimension characteristic of the light reflection area is analyzed by the same. Whether the dimension characteristic of the light reflection area is larger than a first predetermined value is determined. If the dimension characteristic of the light reflection area is larger than the first predetermined value, then the capturing angle is adjusted within a first adjusting range. After the step of adjusting the capturing angle within a first adjusting range is performed, the step of capturing the appearance image is performed again.Type: ApplicationFiled: February 10, 2012Publication date: October 4, 2012Inventors: Ya-Hui Tsai, Kuo-Tang Huang, Chin-Kuei Chang, Chun-Lung Chang
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Patent number: 7910256Abstract: The present invention provides a method for supplying fuel to a fuel cell, in which a monitoring period is determined for monitoring the fuel cell, and then a feeding amount of fuel is determined by integrating characteristic value generated from the fuel cell in the monitoring period. In another embodiment, it is further comprising a step of determining the variation profile associated with the characteristic value during the period so as to judge whether it is necessary to feed the fuel into the fuel cell or not. By means of the present invention, the supplying of fuel to the fuel cell under dynamic loadings can be effectively controlled for optimizing the performance of the fuel cell as well as reducing the cost without installing any fuel sensor.Type: GrantFiled: September 10, 2008Date of Patent: March 22, 2011Assignee: Institute of Nuclear Energy Research Atomic Energy Council, Executive YuanInventors: Charn-Ying Chen, Chun-Lung Chang, Der-Hsing Liou, Chih-Yuan Hsu, Rui-Xiang Wang
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Publication number: 20100278389Abstract: The present invention provides a method for image recombination of a plurality of images and image identification and a system for image acquiring and identification. Features with respect to the plurality of images are recombined and enhanced so as to form a recombined image. After that, the recombined image is processed to emphasize the features of the recombined image so that the recombined image is capable of being identified easily. Furthermore, the present provides a system to perform the foregoing method, whereby reducing unidentified problems caused due to low quality image of the monitoring system.Type: ApplicationFiled: July 30, 2009Publication date: November 4, 2010Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Ya-Hui Tsai, Kuo-Tang Huang, Chun-Lung Chang, Lai-Sheng Chen